In-situ phosphorus-doped polysilicon prepared using rapid-thermal anneal (RTA) and its application for polysilicon passivated-contact solar cells

A rapid thermal anneal (RTA) is used to crystallize the plasma-enhanced chemical vapor deposition (PECVD) deposited hydrogenated amorphous silicon (a-Si:H) thin film to form the phosphorus-doped polysilicon passivated contact in tunnel oxide passivated contact (TOPCon) solar cells. The effects of an...

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Veröffentlicht in:	Solar energy materials and solar cells 2020-06, Vol.210, p.110518, Article 110518
Hauptverfasser:	Yang, Qing, Liao, Mingdun, Wang, Zhixue, Zheng, Jingming, lin, Yiran, Guo, Xueqi, Rui, Zhe, Huang, Dandan, Lu, Linna, Feng, Mengmeng, Cheng, Peihong, Shou, Chunhui, Zeng, Yuheng, Yan, Baojie, Ye, Jichun
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum oxide Amorphous silicon Annealing Annealing furnaces Blistering c-Si Circuits Cooling effects Crystallization Dark current Open circuit voltage Passivity PECVD Phosphorus Photovoltaic cells Plasma enhanced chemical vapor deposition Polysilicon Polysilicon passivated contact Rapid thermal anneal (RTA) Solar cell Solar cells Thickness Thin films TOPCon Tube furnaces
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