Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode
In this study, semiconductor device applications of organic material sunset yellow (SY) (C 16 H 10 N 2 Na 2 O 7 S 2 ) has been investigated. The SY thin film was grown on n -Si via spin coating method and the Au/SY/n-Si/Au heterojunction was fabricated. The basic diode parameters of device were dete...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-09, Vol.31 (17), p.14665-14673 |
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| container_title | Journal of materials science. Materials in electronics |
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| creator | Imer, A. G. Kaya, E. Dere, A. Al-Sehemi, A. G. Al-Ghamdi, A. A. Karabulut, A. Yakuphanoglu, F. |
| description | In this study, semiconductor device applications of organic material sunset yellow (SY) (C
16
H
10
N
2
Na
2
O
7
S
2
) has been investigated. The SY thin film was grown on
n
-Si via spin coating method and the
Au/SY/n-Si/Au
heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (
I
–
V
) and capacitance–voltage (
C
–
V
) measurements at the room temperature. The values of the ideality factory (
n
) and barrier height (
Φ
b
) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (
R
s
) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear
C
−2
–
V
curves with reverse bias room temperature and difference frequency. Furthermore,
I
–
V
measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode. |
| doi_str_mv | 10.1007/s10854-020-04029-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2438133649</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2438133649</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-ac6dcd741694ed584e757e650b0b3c4e4428d5a8d1e890babeb54ed7cca1de653</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWKt_wFPAc9xkN9nNHkvxo1DwUAU9hWwy7aZud2uSRfrvjVbw5mkG5nlnmAeha0ZvGaVVFhiVghOaU0I5zWsiT9CEiaogXOavp2hCa1ERLvL8HF2EsKWUlryQE7RZdN24c72Obuix2-21iTh1sQUMHZjondEdNq32aQLehehMwMMaz8ZsNfYBIn6Drhs-s56sXDYbcXtovLN4ZdohxvcDtm6wcInO1roLcPVbp-jl_u55_kiWTw-L-WxJTMHqSLQprbEVZ2XNwQrJoRIVlII2tCkMB85zaYWWloGsaaMbaEQCK2M0s4krpujmuHfvh48RQlTbYfR9Oqny9DAripLXicqPlPFDCB7Wau_dTvuDYlR9C1VHoSoJVT9ClUyh4hgKCe434P9W_5P6AlQsemg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2438133649</pqid></control><display><type>article</type><title>Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode</title><source>SpringerLink Journals</source><creator>Imer, A. G. ; Kaya, E. ; Dere, A. ; Al-Sehemi, A. G. ; Al-Ghamdi, A. A. ; Karabulut, A. ; Yakuphanoglu, F.</creator><creatorcontrib>Imer, A. G. ; Kaya, E. ; Dere, A. ; Al-Sehemi, A. G. ; Al-Ghamdi, A. A. ; Karabulut, A. ; Yakuphanoglu, F.</creatorcontrib><description>In this study, semiconductor device applications of organic material sunset yellow (SY) (C
16
H
10
N
2
Na
2
O
7
S
2
) has been investigated. The SY thin film was grown on
n
-Si via spin coating method and the
Au/SY/n-Si/Au
heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (
I
–
V
) and capacitance–voltage (
C
–
V
) measurements at the room temperature. The values of the ideality factory (
n
) and barrier height (
Φ
b
) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (
R
s
) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear
C
−2
–
V
curves with reverse bias room temperature and difference frequency. Furthermore,
I
–
V
measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-04029-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Electric potential ; Energy levels ; Evaluation ; Heterojunctions ; Materials Science ; Molecular structure ; Optical and Electronic Materials ; Optical measuring instruments ; Optoelectronic devices ; Organic light emitting diodes ; Parameters ; Photodiodes ; Photoelectricity ; Physics ; Room temperature ; Schottky diodes ; Spin coating ; Sunset ; Thin films ; Voltage</subject><ispartof>Journal of materials science. Materials in electronics, 2020-09, Vol.31 (17), p.14665-14673</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-ac6dcd741694ed584e757e650b0b3c4e4428d5a8d1e890babeb54ed7cca1de653</citedby><cites>FETCH-LOGICAL-c319t-ac6dcd741694ed584e757e650b0b3c4e4428d5a8d1e890babeb54ed7cca1de653</cites><orcidid>0000-0003-1694-5458</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-04029-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-04029-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51297</link.rule.ids></links><search><creatorcontrib>Imer, A. G.</creatorcontrib><creatorcontrib>Kaya, E.</creatorcontrib><creatorcontrib>Dere, A.</creatorcontrib><creatorcontrib>Al-Sehemi, A. G.</creatorcontrib><creatorcontrib>Al-Ghamdi, A. A.</creatorcontrib><creatorcontrib>Karabulut, A.</creatorcontrib><creatorcontrib>Yakuphanoglu, F.</creatorcontrib><title>Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>In this study, semiconductor device applications of organic material sunset yellow (SY) (C
16
H
10
N
2
Na
2
O
7
S
2
) has been investigated. The SY thin film was grown on
n
-Si via spin coating method and the
Au/SY/n-Si/Au
heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (
I
–
V
) and capacitance–voltage (
C
–
V
) measurements at the room temperature. The values of the ideality factory (
n
) and barrier height (
Φ
b
) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (
R
s
) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear
C
−2
–
V
curves with reverse bias room temperature and difference frequency. Furthermore,
I
–
V
measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electric potential</subject><subject>Energy levels</subject><subject>Evaluation</subject><subject>Heterojunctions</subject><subject>Materials Science</subject><subject>Molecular structure</subject><subject>Optical and Electronic Materials</subject><subject>Optical measuring instruments</subject><subject>Optoelectronic devices</subject><subject>Organic light emitting diodes</subject><subject>Parameters</subject><subject>Photodiodes</subject><subject>Photoelectricity</subject><subject>Physics</subject><subject>Room temperature</subject><subject>Schottky diodes</subject><subject>Spin coating</subject><subject>Sunset</subject><subject>Thin films</subject><subject>Voltage</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>AFKRA</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><recordid>eNp9kE1LAzEQhoMoWKt_wFPAc9xkN9nNHkvxo1DwUAU9hWwy7aZud2uSRfrvjVbw5mkG5nlnmAeha0ZvGaVVFhiVghOaU0I5zWsiT9CEiaogXOavp2hCa1ERLvL8HF2EsKWUlryQE7RZdN24c72Obuix2-21iTh1sQUMHZjondEdNq32aQLehehMwMMaz8ZsNfYBIn6Drhs-s56sXDYbcXtovLN4ZdohxvcDtm6wcInO1roLcPVbp-jl_u55_kiWTw-L-WxJTMHqSLQprbEVZ2XNwQrJoRIVlII2tCkMB85zaYWWloGsaaMbaEQCK2M0s4krpujmuHfvh48RQlTbYfR9Oqny9DAripLXicqPlPFDCB7Wau_dTvuDYlR9C1VHoSoJVT9ClUyh4hgKCe434P9W_5P6AlQsemg</recordid><startdate>20200901</startdate><enddate>20200901</enddate><creator>Imer, A. G.</creator><creator>Kaya, E.</creator><creator>Dere, A.</creator><creator>Al-Sehemi, A. G.</creator><creator>Al-Ghamdi, A. A.</creator><creator>Karabulut, A.</creator><creator>Yakuphanoglu, F.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-1694-5458</orcidid></search><sort><creationdate>20200901</creationdate><title>Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode</title><author>Imer, A. G. ; Kaya, E. ; Dere, A. ; Al-Sehemi, A. G. ; Al-Ghamdi, A. A. ; Karabulut, A. ; Yakuphanoglu, F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-ac6dcd741694ed584e757e650b0b3c4e4428d5a8d1e890babeb54ed7cca1de653</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Electric potential</topic><topic>Energy levels</topic><topic>Evaluation</topic><topic>Heterojunctions</topic><topic>Materials Science</topic><topic>Molecular structure</topic><topic>Optical and Electronic Materials</topic><topic>Optical measuring instruments</topic><topic>Optoelectronic devices</topic><topic>Organic light emitting diodes</topic><topic>Parameters</topic><topic>Photodiodes</topic><topic>Photoelectricity</topic><topic>Physics</topic><topic>Room temperature</topic><topic>Schottky diodes</topic><topic>Spin coating</topic><topic>Sunset</topic><topic>Thin films</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Imer, A. G.</creatorcontrib><creatorcontrib>Kaya, E.</creatorcontrib><creatorcontrib>Dere, A.</creatorcontrib><creatorcontrib>Al-Sehemi, A. G.</creatorcontrib><creatorcontrib>Al-Ghamdi, A. A.</creatorcontrib><creatorcontrib>Karabulut, A.</creatorcontrib><creatorcontrib>Yakuphanoglu, F.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection (ProQuest)</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Imer, A. G.</au><au>Kaya, E.</au><au>Dere, A.</au><au>Al-Sehemi, A. G.</au><au>Al-Ghamdi, A. A.</au><au>Karabulut, A.</au><au>Yakuphanoglu, F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-09-01</date><risdate>2020</risdate><volume>31</volume><issue>17</issue><spage>14665</spage><epage>14673</epage><pages>14665-14673</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>In this study, semiconductor device applications of organic material sunset yellow (SY) (C
16
H
10
N
2
Na
2
O
7
S
2
) has been investigated. The SY thin film was grown on
n
-Si via spin coating method and the
Au/SY/n-Si/Au
heterojunction was fabricated. The basic diode parameters of device were determined by the current–voltage (
I
–
V
) and capacitance–voltage (
C
–
V
) measurements at the room temperature. The values of the ideality factory (
n
) and barrier height (
Φ
b
) were evaluated as 1.15 and 0.70 eV, respectively; and series resistance (
R
s
) of device was found using Norde functions. The values of built in potential, donor concentration, Fermi energy level and barrier height were also estimated from the linear
C
−2
–
V
curves with reverse bias room temperature and difference frequency. Furthermore,
I
–
V
measurements were applied under different illuminations; some photoelectrical parameters of device were evaluated to understand the photo response properties of the device. Consequently, the results confirmed that the barrier height can be modified by interfacial SY layer, and the device can be used in optoelectronic applications such as optical sensor or photodiode.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-04029-8</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-1694-5458</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2020-09, Vol.31 (17), p.14665-14673 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2438133649 |
| source | SpringerLink Journals |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Electric potential Energy levels Evaluation Heterojunctions Materials Science Molecular structure Optical and Electronic Materials Optical measuring instruments Optoelectronic devices Organic light emitting diodes Parameters Photodiodes Photoelectricity Physics Room temperature Schottky diodes Spin coating Sunset Thin films Voltage |
| title | Illumination impact on the electrical characteristics of Au/Sunset Yellow/n-Si/Au hybrid Schottky diode |
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