Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates

The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial layers with high structural perfection and minimum ro...

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Veröffentlicht in:	Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2020-07, Vol.14 (4), p.771-776
Hauptverfasser:	Alfimova, D. L., Lunina, M. L., Lunin, L. S., Pashchenko, O. S., Pashchenko, A. S., Yatsenko, A. N.
Format:	Artikel
Sprache:	eng
Schlagworte:	Bismuth Chemistry and Materials Science Epitaxial growth Epitaxial layers Indium antimonide Intermetallic compounds Materials Science Process parameters Substrates Surfaces and Interfaces Temperature gradients Thin Films
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