Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates

Effect of Bismuth on the Structural Perfection of Elastically Strained AlGaInSbBi Epitaxial Layers Grown on InSb Substrates

The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial layers with high structural perfection and minimum ro...

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Veröffentlicht in:Surface investigation, x-ray, synchrotron and neutron techniques x-ray, synchrotron and neutron techniques, 2020-07, Vol.14 (4), p.771-776
Hauptverfasser: Alfimova, D. L., Lunina, M. L., Lunin, L. S., Pashchenko, O. S., Pashchenko, A. S., Yatsenko, A. N.
Format: Artikel
Sprache:eng
Schlagworte:
Bismuth
Chemistry and Materials Science
Epitaxial growth
Epitaxial layers
Indium antimonide
Intermetallic compounds
Materials Science
Process parameters
Substrates
Surfaces and Interfaces
Temperature gradients
Thin Films
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Zusammenfassung:The effect of bismuth on the structural perfection of elastically strained AlGaInSbBi epitaxial layers grown on InSb substrates in a temperature gradient field is studied. The optimal parameters of the growth process of AlGaInSbBi(InSb) epitaxial layers with high structural perfection and minimum roughness are revealed: 0.05 < < 0.2 mole fraction, temperature gradient 10 K/cm ≤ G ≤ 30 K/cm, liquid-zone thickness 60 ≤ l ≤ 100 µm, and the temperature range 623 K ≤ Т ≤ 823 K.
ISSN:1027-4510
1819-7094
DOI:10.1134/S1027451020040217