Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells
We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much low...
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| Veröffentlicht in: | Applied physics letters 2020-08, Vol.117 (8) |
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| container_title | Applied physics letters |
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| creator | Kudryavtsev, K. E. Rumyantsev, V. V. Aleshkin, V. Ya Dubinov, A. A. Utochkin, V. V. Fadeev, M. A. Mikhailov, N. N. Alymov, G. Svintsov, D. Gavrilenko, V. I. Morozov, S. V. |
| description | We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. In this case, lasing up to at least 270 K at 3.7 μm wavelength seems feasible. |
| doi_str_mv | 10.1063/5.0020218 |
| format | Article |
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E. ; Rumyantsev, V. V. ; Aleshkin, V. Ya ; Dubinov, A. A. ; Utochkin, V. V. ; Fadeev, M. A. ; Mikhailov, N. N. ; Alymov, G. ; Svintsov, D. ; Gavrilenko, V. I. ; Morozov, S. V.</creator><creatorcontrib>Kudryavtsev, K. E. ; Rumyantsev, V. V. ; Aleshkin, V. Ya ; Dubinov, A. A. ; Utochkin, V. V. ; Fadeev, M. A. ; Mikhailov, N. N. ; Alymov, G. ; Svintsov, D. ; Gavrilenko, V. I. ; Morozov, S. V.</creatorcontrib><description>We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. 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Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. In this case, lasing up to at least 270 K at 3.7 μm wavelength seems feasible.</description><subject>Applied physics</subject><subject>Augers</subject><subject>Barrier layers</subject><subject>Dispersion curve analysis</subject><subject>Emissions control</subject><subject>Heterostructures</subject><subject>Mercury cadmium tellurides</subject><subject>Mercury tellurides</subject><subject>Quantum wells</subject><subject>Stimulated emission</subject><subject>Temperature dependence</subject><issn>0003-6951</issn><issn>1077-3118</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE9KAzEUh4MoWKsLbxBwpTA1fyaZzrIUtYLgpq6HTPKmjswkbZJR3HkHwdN4Bg_hSZzaogvB1Y_33sfvwYfQMSUjSiQ_FyNCGGF0vIMGlGRZwikd76IBIYQnMhd0Hx2E8NCPgnE-QG9zaJfgVew84KZu66hi7WzAlfM4xLrtGhXBYGjrEPoDri3mny-vKf54b7FXdgHYdICjw_HeQ7h3jcHKGmydTX43k24BHnvQri1r-_1i3TRbzOF8ataBV52ysWvxEzRNOER7lWoCHG1ziO4uL-bTWXJze3U9ndwkmrMsJsqIcW7KFJjUSjIg45QYnRLGKC2pzqmuwGjBciFKU0qeMkllyTItJRhmKB-ik03v0rtVByEWD67ztn9ZsJT3vkSeiZ463VDauxA8VMXS163yzwUlxVp7IYqt9p4927BBb13-wI_O_4LF0lT_wX-bvwB2FZRM</recordid><startdate>20200824</startdate><enddate>20200824</enddate><creator>Kudryavtsev, K. 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I.</au><au>Morozov, S. V.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells</atitle><jtitle>Applied physics letters</jtitle><date>2020-08-24</date><risdate>2020</risdate><volume>117</volume><issue>8</issue><issn>0003-6951</issn><eissn>1077-3118</eissn><coden>APPLAB</coden><abstract>We report on the stimulated emission (SE) from HgTe/CdHgTe quantum well (QW) heterostructures up to 240 K at 3.7 μm wavelength. Based on the temperature dependence of the SE threshold, a total Auger recombination (AR) coefficient of 10−27 cm6/s has been deduced for HgTe/CdHgTe QWs, which is much lower than that for bulk HgCdTe with the same bandgap and indicates suppression of (threshold) AR processes due to the symmetry of carrier dispersion curves. We demonstrate that QW-specific, non-threshold AR contributes strongly to the temperature quenching of laser action from HgTe/CdHgTe QWs. We expect, however, that the above processes may be partially suppressed via introduction of wide-gap CdHgTe barrier layers with a [Cd] fraction of 80% or higher. In this case, lasing up to at least 270 K at 3.7 μm wavelength seems feasible.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0020218</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0002-3302-5429</orcidid><orcidid>https://orcid.org/0000-0002-5805-7814</orcidid><orcidid>https://orcid.org/0000-0002-2203-264X</orcidid><orcidid>https://orcid.org/0000-0003-0739-2214</orcidid></addata></record> |
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| subjects | Applied physics Augers Barrier layers Dispersion curve analysis Emissions control Heterostructures Mercury cadmium tellurides Mercury tellurides Quantum wells Stimulated emission Temperature dependence |
| title | Temperature limitations for stimulated emission in 3–4 μm range due to threshold and non-threshold Auger recombination in HgTe/CdHgTe quantum wells |
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