Role of high nitrogen flux in InAlN growth by plasma-assisted molecular beam epitaxy

•High N-flux stabilizes In-N bonds in InAlN.•InAlN lattice-matched to GaN was grown at 605 °C by MBE.•InAlN indium content diagram is shown as a function of growth temperature and N-flux.•Honeycomb microstructure is observed for InAlN grown with low and high N-flux.•Increase of average cell size is...

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Veröffentlicht in:	Journal of crystal growth 2020-08, Vol.544, p.125720, Article 125720
Hauptverfasser:	Sawicka, Marta, Fiuczek, Natalia, Wolny, Paweł, Feduniewicz-Żmuda, Anna, Siekacz, Marcin, Kryśko, Marcin, Nowakowski-Szkudlarek, Krzesimir, Smalc-Koziorowska, Julita, Kret, Sławomir, Gačević, Žarko, Calleja, Enrique, Skierbiszewski, Czesław
Format:	Artikel
Sprache:	eng
Schlagworte:	A1. Atomic force microscopy A1. Reflection high energy electron diffraction A3. Molecular beam epitaxy B1. Nitrides B2. Semiconducting III-V materials Crystallography Epitaxial growth Flux Indium Inhomogeneity Lattice matching Materials Science Materials Science, Multidisciplinary Molecular beam epitaxy Morphology Nitrogen Physical Sciences Physics Physics, Applied Science & Technology Technology
Online-Zugang:	Volltext
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