Optical and electrical properties of ferroelectric BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 semiconductor ceramics
•Dielectric/ferroelectric properties of BANT-xBNN ceramics were investigated.•Perfect ferroelectricity and low optical band gap ~2.3 eV.•The improved Jsc and Voc, poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively. Perovskite-oxide ferroelectric semiconductors were widely concerned in photovol...
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| Veröffentlicht in: | Materials letters 2020-06, Vol.268, p.1, Article 127627 |
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| creator | Chen, Zexing Yuan, Changlai Liu, Xiao Zhu, Baohua Meng, Liufang Xu, Jiwen Zhou, Changrong Wang, Jiang Rao, Guanghui |
| description | •Dielectric/ferroelectric properties of BANT-xBNN ceramics were investigated.•Perfect ferroelectricity and low optical band gap ~2.3 eV.•The improved Jsc and Voc, poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively.
Perovskite-oxide ferroelectric semiconductors were widely concerned in photovoltaic applications due to its excellent optical absorption and thermal stability. In this work, BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 ceramics (abbreviation as BANT-xBNN) were successfully prepared by using a solid-state reaction method. All the ceramics illustrate perfect ferroelectric behavior. The addition of BaNi0.5Nb0.5O3 can substantially reduce the band gap of Ag doped Bi0.5Na0.5TiO3 material to ~2.3 eV. The short-circuit current (Jsc) and the open-circuit voltaic (Voc) of the selected BANT-0.04BNN ceramic poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively. The novel BANT-xBNN system has broad application prospects for ferroelectric photovoltaic devices. |
| doi_str_mv | 10.1016/j.matlet.2020.127627 |
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Perovskite-oxide ferroelectric semiconductors were widely concerned in photovoltaic applications due to its excellent optical absorption and thermal stability. In this work, BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 ceramics (abbreviation as BANT-xBNN) were successfully prepared by using a solid-state reaction method. All the ceramics illustrate perfect ferroelectric behavior. The addition of BaNi0.5Nb0.5O3 can substantially reduce the band gap of Ag doped Bi0.5Na0.5TiO3 material to ~2.3 eV. The short-circuit current (Jsc) and the open-circuit voltaic (Voc) of the selected BANT-0.04BNN ceramic poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively. The novel BANT-xBNN system has broad application prospects for ferroelectric photovoltaic devices.</description><identifier>ISSN: 0167-577X</identifier><identifier>EISSN: 1873-4979</identifier><identifier>DOI: 10.1016/j.matlet.2020.127627</identifier><language>eng</language><publisher>Amsterdam: Elsevier B.V</publisher><subject>Ag doped Bi0.5Na0.5TiO3 ; Bismuth titanate ; Ceramics ; Circuits ; Electrical properties ; Ferroelectric materials ; Ferroelectric semiconductors ; Ferroelectricity ; Materials science ; Optical band gap ; Optical properties ; Perovskites ; Photovoltaic cells ; Short circuit currents ; Silver ; Thermal stability</subject><ispartof>Materials letters, 2020-06, Vol.268, p.1, Article 127627</ispartof><rights>2020 Elsevier B.V.</rights><rights>Copyright Elsevier BV Jun 1, 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><orcidid>0000-0003-2483-3149 ; 0000-0002-4546-6256</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://dx.doi.org/10.1016/j.matlet.2020.127627$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,780,784,3550,27924,27925,45995</link.rule.ids></links><search><creatorcontrib>Chen, Zexing</creatorcontrib><creatorcontrib>Yuan, Changlai</creatorcontrib><creatorcontrib>Liu, Xiao</creatorcontrib><creatorcontrib>Zhu, Baohua</creatorcontrib><creatorcontrib>Meng, Liufang</creatorcontrib><creatorcontrib>Xu, Jiwen</creatorcontrib><creatorcontrib>Zhou, Changrong</creatorcontrib><creatorcontrib>Wang, Jiang</creatorcontrib><creatorcontrib>Rao, Guanghui</creatorcontrib><title>Optical and electrical properties of ferroelectric BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 semiconductor ceramics</title><title>Materials letters</title><description>•Dielectric/ferroelectric properties of BANT-xBNN ceramics were investigated.•Perfect ferroelectricity and low optical band gap ~2.3 eV.•The improved Jsc and Voc, poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively.
Perovskite-oxide ferroelectric semiconductors were widely concerned in photovoltaic applications due to its excellent optical absorption and thermal stability. In this work, BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 ceramics (abbreviation as BANT-xBNN) were successfully prepared by using a solid-state reaction method. All the ceramics illustrate perfect ferroelectric behavior. The addition of BaNi0.5Nb0.5O3 can substantially reduce the band gap of Ag doped Bi0.5Na0.5TiO3 material to ~2.3 eV. The short-circuit current (Jsc) and the open-circuit voltaic (Voc) of the selected BANT-0.04BNN ceramic poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively. The novel BANT-xBNN system has broad application prospects for ferroelectric photovoltaic devices.</description><subject>Ag doped Bi0.5Na0.5TiO3</subject><subject>Bismuth titanate</subject><subject>Ceramics</subject><subject>Circuits</subject><subject>Electrical properties</subject><subject>Ferroelectric materials</subject><subject>Ferroelectric semiconductors</subject><subject>Ferroelectricity</subject><subject>Materials science</subject><subject>Optical band gap</subject><subject>Optical properties</subject><subject>Perovskites</subject><subject>Photovoltaic cells</subject><subject>Short circuit currents</subject><subject>Silver</subject><subject>Thermal stability</subject><issn>0167-577X</issn><issn>1873-4979</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNo1UMlOwzAQtRBIlMIfcIjEOWG8JI4vSG3FJlXtpQdulmNPkKO0KU6KKvHzuA0cZnvzNMsj5J5CRoEWj022NUOLQ8aARYjJgskLMqGl5KlQUl2SSaTJNJfy45rc9H0DAEKBmJCf9X7w1rSJ2bkEW7RDOJf70O0xDB77pKuTGkPo_rvJ3BznHrI8jXacfUIGY7oykIl842l6XPkzUJ38mic9br3tdu5ghy4kFoOJdX9LrmrT9nj3F6dk8_K8Wbyly_Xr-2K2TLHkRUpz7sAyxqySRjGWV5WLeK44d7XiglHgVV1xKIQyZYmMAUXHrHHCxRbnU_Iwjo0_fR2wH3TTHcIubtRM8EJwpkQRWU8jC-Ml3x6D7q3HnUXnQ_xbu85rCvqkt270qLc-6a1Hvfkvz6FzGA</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Chen, Zexing</creator><creator>Yuan, Changlai</creator><creator>Liu, Xiao</creator><creator>Zhu, Baohua</creator><creator>Meng, Liufang</creator><creator>Xu, Jiwen</creator><creator>Zhou, Changrong</creator><creator>Wang, Jiang</creator><creator>Rao, Guanghui</creator><general>Elsevier B.V</general><general>Elsevier BV</general><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><orcidid>https://orcid.org/0000-0003-2483-3149</orcidid><orcidid>https://orcid.org/0000-0002-4546-6256</orcidid></search><sort><creationdate>20200601</creationdate><title>Optical and electrical properties of ferroelectric BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 semiconductor ceramics</title><author>Chen, Zexing ; Yuan, Changlai ; Liu, Xiao ; Zhu, Baohua ; Meng, Liufang ; Xu, Jiwen ; Zhou, Changrong ; Wang, Jiang ; Rao, Guanghui</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-e836-153d0c222c97a9225bbd8365933df9342103bfb30649a88e2201ed2cad4d10333</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Ag doped Bi0.5Na0.5TiO3</topic><topic>Bismuth titanate</topic><topic>Ceramics</topic><topic>Circuits</topic><topic>Electrical properties</topic><topic>Ferroelectric materials</topic><topic>Ferroelectric semiconductors</topic><topic>Ferroelectricity</topic><topic>Materials science</topic><topic>Optical band gap</topic><topic>Optical properties</topic><topic>Perovskites</topic><topic>Photovoltaic cells</topic><topic>Short circuit currents</topic><topic>Silver</topic><topic>Thermal stability</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Chen, Zexing</creatorcontrib><creatorcontrib>Yuan, Changlai</creatorcontrib><creatorcontrib>Liu, Xiao</creatorcontrib><creatorcontrib>Zhu, Baohua</creatorcontrib><creatorcontrib>Meng, Liufang</creatorcontrib><creatorcontrib>Xu, Jiwen</creatorcontrib><creatorcontrib>Zhou, Changrong</creatorcontrib><creatorcontrib>Wang, Jiang</creatorcontrib><creatorcontrib>Rao, Guanghui</creatorcontrib><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>Materials letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Chen, Zexing</au><au>Yuan, Changlai</au><au>Liu, Xiao</au><au>Zhu, Baohua</au><au>Meng, Liufang</au><au>Xu, Jiwen</au><au>Zhou, Changrong</au><au>Wang, Jiang</au><au>Rao, Guanghui</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical and electrical properties of ferroelectric BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 semiconductor ceramics</atitle><jtitle>Materials letters</jtitle><date>2020-06-01</date><risdate>2020</risdate><volume>268</volume><spage>1</spage><pages>1-</pages><artnum>127627</artnum><issn>0167-577X</issn><eissn>1873-4979</eissn><abstract>•Dielectric/ferroelectric properties of BANT-xBNN ceramics were investigated.•Perfect ferroelectricity and low optical band gap ~2.3 eV.•The improved Jsc and Voc, poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively.
Perovskite-oxide ferroelectric semiconductors were widely concerned in photovoltaic applications due to its excellent optical absorption and thermal stability. In this work, BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 ceramics (abbreviation as BANT-xBNN) were successfully prepared by using a solid-state reaction method. All the ceramics illustrate perfect ferroelectric behavior. The addition of BaNi0.5Nb0.5O3 can substantially reduce the band gap of Ag doped Bi0.5Na0.5TiO3 material to ~2.3 eV. The short-circuit current (Jsc) and the open-circuit voltaic (Voc) of the selected BANT-0.04BNN ceramic poled at 2.0 kV, is 2.79 nA/cm2 and 0.54 V, respectively. The novel BANT-xBNN system has broad application prospects for ferroelectric photovoltaic devices.</abstract><cop>Amsterdam</cop><pub>Elsevier B.V</pub><doi>10.1016/j.matlet.2020.127627</doi><orcidid>https://orcid.org/0000-0003-2483-3149</orcidid><orcidid>https://orcid.org/0000-0002-4546-6256</orcidid></addata></record> |
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| subjects | Ag doped Bi0.5Na0.5TiO3 Bismuth titanate Ceramics Circuits Electrical properties Ferroelectric materials Ferroelectric semiconductors Ferroelectricity Materials science Optical band gap Optical properties Perovskites Photovoltaic cells Short circuit currents Silver Thermal stability |
| title | Optical and electrical properties of ferroelectric BaxBi0.5-0.5xAg0.05-0.5xNa0.45Ti1-xNi0.5xNb0.5xO3 semiconductor ceramics |
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