The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Circular photocurrents (CPC), namely circular photogalvanic (CPGE) and photon drag effects, have recently been reported both in monolayer and multilayer transition metal dichalcogenide (TMD) phototransistors. However, the underlying physics for the emergence of these effects are not yet fully unders...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	arXiv.org 2020-08
Hauptverfasser:	Quereda, Jorge, Hidding, Jan, Ghiasi, Talieh S, van Wees, Bart J, Caspar H van der Wal, Guimaraes, Marcos H D
Format:	Artikel
Sprache:	eng
Schlagworte:	Broken symmetry Electric contacts Electric fields Electron states Helicity Molybdenum compounds Monolayers Multilayers Photoelectric effect Photoelectric emission Phototransistors Strain Symmetry Transistors Transition metal compounds
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!