Modelling of the field effect in porous silicon

Thе paper theoretically investigates peculiarities of the field effect in porous silicon with spherical geometry of pores. By solving the Poisson’s equation it is obtained and analyzed coordinate dependences of the electrostatic potential for different values of pore radius and distance between pore...

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Veröffentlicht in:	Applied nanoscience 2020-08, Vol.10 (8), p.2639-2643
Hauptverfasser:	Monastyrskii, Liubomyr S., Sokolovskii, Bohdan S., Boyko, Yaroslav V., Alekseichyk, Mariya P.
Format:	Artikel
Sprache:	eng
Schlagworte:	Chemistry and Materials Science Curvature Electrical resistivity Materials Science Membrane Biology Nanochemistry Nanotechnology Nanotechnology and Microengineering Original Article Porous silicon Silicon
Online-Zugang:	Volltext
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