Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications
MoRe–Si(W)–MoRe planar Josephson junctions with a hybrid barrier layer made of amorphous silicon doped with tungsten at relatively high tungsten concentrations (~ 11%) are experimentally studied. Small intrinsic (natural) capacitance and shunting by tungsten nanoclusters give an advantage to MoRe–Si...
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| Veröffentlicht in: | Applied nanoscience 2020-08, Vol.10 (8), p.2843-2848 |
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| container_title | Applied nanoscience |
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| creator | Shapovalov, A. P. Shaternik, V. E. Turutanov, O. G. Suvorov, O. Yu Kalenyuk, A. A. Lyakhno, V. Yu Yilmaz, U. Febvre, P. Shnyrkov, V. I. |
| description | MoRe–Si(W)–MoRe planar Josephson junctions with a hybrid barrier layer made of amorphous silicon doped with tungsten at relatively high tungsten concentrations (~ 11%) are experimentally studied. Small intrinsic (natural) capacitance and shunting by tungsten nanoclusters give an advantage to MoRe–Si(W)–MoRe junctions against traditional superconductor–insulator–superconductor (SIS) planar junctions as candidates for innovative superconducting electronics. It is shown that the use of such junctions with a Si(W) barrier layer thickness of 15–30 nm can substantially enhance the sensitivity of both RF and DC SQUIDs. |
| doi_str_mv | 10.1007/s13204-020-01254-9 |
| format | Article |
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Small intrinsic (natural) capacitance and shunting by tungsten nanoclusters give an advantage to MoRe–Si(W)–MoRe junctions against traditional superconductor–insulator–superconductor (SIS) planar junctions as candidates for innovative superconducting electronics. It is shown that the use of such junctions with a Si(W) barrier layer thickness of 15–30 nm can substantially enhance the sensitivity of both RF and DC SQUIDs.</description><subject>Amorphous silicon</subject><subject>Barrier layers</subject><subject>Capacitance</subject><subject>Chemistry and Materials Science</subject><subject>Condensed Matter</subject><subject>Josephson junctions</subject><subject>Materials Science</subject><subject>Membrane Biology</subject><subject>Nanochemistry</subject><subject>Nanoclusters</subject><subject>Nanotechnology</subject><subject>Nanotechnology and Microengineering</subject><subject>Original Article</subject><subject>Physics</subject><subject>Sensitivity enhancement</subject><subject>SIS (superconductors)</subject><subject>Superconductivity</subject><subject>Thickness</subject><subject>Tungsten</subject><issn>2190-5509</issn><issn>2190-5517</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1OwzAQhSMEElXpBVhFYkMXgXFsx_GyKj-tVISgrVhajmvTVGkS7ASJHXfghpwEt0Flx8xixqPvPVkvCM4RXCEAdu0QjoFEEEMEKKYk4kdBL0YcIkoROz7swE-DgXMb8EUJSzDtBYv5VhZFqGQtVd7IUunQ6cJEbt2WjV6FD9Wz_v78mueXL0M_d89w05aqyavShaay4fxpOb1xoazrIldyfz8LTowsnB78zn6wvLtdjCfR7PF-Oh7NIoU5NJFWWcIQJSlf8SxNkG-WMppoRQ0xScI5QVmGNFBAaZwpLFfGSMNYikmyggT3g2Hnu5aFqG2-lfZDVDIXk9FM7G5AUoYZSt-RZy86trbVW6tdIzZVa0v_PRETTGNgDIGn4o5StnLOanOwRSB2YYsubOHDFvuwBfci3Imch8tXbf-s_1H9ADBMgQA</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Shapovalov, A. 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P.</creatorcontrib><creatorcontrib>Shaternik, V. E.</creatorcontrib><creatorcontrib>Turutanov, O. G.</creatorcontrib><creatorcontrib>Suvorov, O. Yu</creatorcontrib><creatorcontrib>Kalenyuk, A. A.</creatorcontrib><creatorcontrib>Lyakhno, V. Yu</creatorcontrib><creatorcontrib>Yilmaz, U.</creatorcontrib><creatorcontrib>Febvre, P.</creatorcontrib><creatorcontrib>Shnyrkov, V. I.</creatorcontrib><collection>CrossRef</collection><collection>Hyper Article en Ligne (HAL)</collection><jtitle>Applied nanoscience</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shapovalov, A. P.</au><au>Shaternik, V. E.</au><au>Turutanov, O. G.</au><au>Suvorov, O. Yu</au><au>Kalenyuk, A. A.</au><au>Lyakhno, V. Yu</au><au>Yilmaz, U.</au><au>Febvre, P.</au><au>Shnyrkov, V. I.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications</atitle><jtitle>Applied nanoscience</jtitle><stitle>Appl Nanosci</stitle><date>2020-08-01</date><risdate>2020</risdate><volume>10</volume><issue>8</issue><spage>2843</spage><epage>2848</epage><pages>2843-2848</pages><issn>2190-5509</issn><eissn>2190-5517</eissn><abstract>MoRe–Si(W)–MoRe planar Josephson junctions with a hybrid barrier layer made of amorphous silicon doped with tungsten at relatively high tungsten concentrations (~ 11%) are experimentally studied. Small intrinsic (natural) capacitance and shunting by tungsten nanoclusters give an advantage to MoRe–Si(W)–MoRe junctions against traditional superconductor–insulator–superconductor (SIS) planar junctions as candidates for innovative superconducting electronics. 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| subjects | Amorphous silicon Barrier layers Capacitance Chemistry and Materials Science Condensed Matter Josephson junctions Materials Science Membrane Biology Nanochemistry Nanoclusters Nanotechnology Nanotechnology and Microengineering Original Article Physics Sensitivity enhancement SIS (superconductors) Superconductivity Thickness Tungsten |
| title | Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications |
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