Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes
This work aims to clarify the electrical activities of threading dislocations and their relation with leakage sites in homoepitaxial GaN Schottky barrier diodes based on the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). First, the recombination activities...
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| Veröffentlicht in: | Journal of electronic materials 2020-09, Vol.49 (9), p.5196-5204 |
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| creator | Chen, Jun Yi, Wei Kumar, Ashutosh Iwanade, Akio Tanaka, Ryo Takashima, Shinya Edo, Masaharu Ito, Shun Kimura, Takashi Ohkubo, Tadakatsu Sekiguchi, Takashi |
| description | This work aims to clarify the electrical activities of threading dislocations and their relation with leakage sites in homoepitaxial GaN Schottky barrier diodes based on the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). First, the recombination activities of threading dislocations in epilayers grown on different substrates are compared by EBIC. The dislocation type is characterized based on etch pit measurements and TEM. The dislocation density and character are strongly affected by defects in the substrate. The recombination strength of dislocations is revealed to be correlated with their type. It is found that single dislocations including both edge and mixed type exhibit weak ( |
| doi_str_mv | 10.1007/s11664-020-08081-2 |
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First, the recombination activities of threading dislocations in epilayers grown on different substrates are compared by EBIC. The dislocation type is characterized based on etch pit measurements and TEM. The dislocation density and character are strongly affected by defects in the substrate. The recombination strength of dislocations is revealed to be correlated with their type. It is found that single dislocations including both edge and mixed type exhibit weak (< 5%) EBIC contrast, while dislocation clusters show strong contrast (up to 30%). Second, leakage sites in Schottky diodes are visualized by EBIC under reverse bias. There is no direct correlation between the initial leakage sites and threading dislocations; whereas, instead of dislocations, a variety of initial leakage/breakdown sites are found, including grown-in pit defects as initial breakdown sites and hillocks at the Schottky interface acting as strong leakage sites.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-020-08081-2</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>18th Conference on Defects-Recognition ; Breakdown ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Defects ; Dislocation density ; Electron beam induced current ; Electronics and Microelectronics ; Etch pits ; Gallium nitrides ; Imaging and Physics in Semiconductors (DRIP XVIII) ; Instrumentation ; Leakage ; Materials Science ; Optical and Electronic Materials ; Schottky diodes ; Solid State Physics ; Substrates ; Threading dislocations ; Topical Collection: 18th Conference on Defects (DRIP XVIII) ; Transmission electron microscopy</subject><ispartof>Journal of electronic materials, 2020-09, Vol.49 (9), p.5196-5204</ispartof><rights>The Minerals, Metals & Materials Society 2020</rights><rights>The Minerals, Metals & Materials Society 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-d0a709262fd1652925739eeb11deb11f2ef03fff2e2ed3a7d86ebe028ebcc5a83</citedby><cites>FETCH-LOGICAL-c319t-d0a709262fd1652925739eeb11deb11f2ef03fff2e2ed3a7d86ebe028ebcc5a83</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-020-08081-2$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-020-08081-2$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Chen, Jun</creatorcontrib><creatorcontrib>Yi, Wei</creatorcontrib><creatorcontrib>Kumar, Ashutosh</creatorcontrib><creatorcontrib>Iwanade, Akio</creatorcontrib><creatorcontrib>Tanaka, Ryo</creatorcontrib><creatorcontrib>Takashima, Shinya</creatorcontrib><creatorcontrib>Edo, Masaharu</creatorcontrib><creatorcontrib>Ito, Shun</creatorcontrib><creatorcontrib>Kimura, Takashi</creatorcontrib><creatorcontrib>Ohkubo, Tadakatsu</creatorcontrib><creatorcontrib>Sekiguchi, Takashi</creatorcontrib><title>Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>This work aims to clarify the electrical activities of threading dislocations and their relation with leakage sites in homoepitaxial GaN Schottky barrier diodes based on the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). First, the recombination activities of threading dislocations in epilayers grown on different substrates are compared by EBIC. The dislocation type is characterized based on etch pit measurements and TEM. The dislocation density and character are strongly affected by defects in the substrate. The recombination strength of dislocations is revealed to be correlated with their type. It is found that single dislocations including both edge and mixed type exhibit weak (< 5%) EBIC contrast, while dislocation clusters show strong contrast (up to 30%). Second, leakage sites in Schottky diodes are visualized by EBIC under reverse bias. There is no direct correlation between the initial leakage sites and threading dislocations; whereas, instead of dislocations, a variety of initial leakage/breakdown sites are found, including grown-in pit defects as initial breakdown sites and hillocks at the Schottky interface acting as strong leakage sites.</description><subject>18th Conference on Defects-Recognition</subject><subject>Breakdown</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Defects</subject><subject>Dislocation density</subject><subject>Electron beam induced current</subject><subject>Electronics and Microelectronics</subject><subject>Etch pits</subject><subject>Gallium nitrides</subject><subject>Imaging and Physics in Semiconductors (DRIP XVIII)</subject><subject>Instrumentation</subject><subject>Leakage</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Schottky diodes</subject><subject>Solid State Physics</subject><subject>Substrates</subject><subject>Threading dislocations</subject><subject>Topical Collection: 18th Conference on Defects (DRIP XVIII)</subject><subject>Transmission electron 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barrier diodes based on the electron-beam-induced current (EBIC) technique and transmission electron microscopy (TEM). First, the recombination activities of threading dislocations in epilayers grown on different substrates are compared by EBIC. The dislocation type is characterized based on etch pit measurements and TEM. The dislocation density and character are strongly affected by defects in the substrate. The recombination strength of dislocations is revealed to be correlated with their type. It is found that single dislocations including both edge and mixed type exhibit weak (< 5%) EBIC contrast, while dislocation clusters show strong contrast (up to 30%). Second, leakage sites in Schottky diodes are visualized by EBIC under reverse bias. There is no direct correlation between the initial leakage sites and threading dislocations; whereas, instead of dislocations, a variety of initial leakage/breakdown sites are found, including grown-in pit defects as initial breakdown sites and hillocks at the Schottky interface acting as strong leakage sites.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-020-08081-2</doi><tpages>9</tpages></addata></record> |
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| subjects | 18th Conference on Defects-Recognition Breakdown Characterization and Evaluation of Materials Chemistry and Materials Science Defects Dislocation density Electron beam induced current Electronics and Microelectronics Etch pits Gallium nitrides Imaging and Physics in Semiconductors (DRIP XVIII) Instrumentation Leakage Materials Science Optical and Electronic Materials Schottky diodes Solid State Physics Substrates Threading dislocations Topical Collection: 18th Conference on Defects (DRIP XVIII) Transmission electron microscopy |
| title | Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes |
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