Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels
Gated molybdenum disulfide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the band structure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events—th...
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creator | Romanin, Davide Brumme, Thomas Daghero, Dario Gonnelli, Renato S. Piatti, Erik |
description | Gated molybdenum disulfide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the band structure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events—the scattering lifetime—is a key parameter to describe charge transport and obtain physical insight into the behavior of such a complex system. In this paper, we combine the solution of the Boltzmann transport equation (based on ab initio density-functional theory calculations of the electronic band structure) with the experimental results concerning the charge-carrier mobility in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We identify the opening of additional intervalley scattering channels connecting the simultaneously filled K/K′ and Q/Q′ valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q′ valleys upon increasing electron doping. |
doi_str_mv | 10.1063/5.0017921 |
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The average time between two charge-carrier scattering events—the scattering lifetime—is a key parameter to describe charge transport and obtain physical insight into the behavior of such a complex system. In this paper, we combine the solution of the Boltzmann transport equation (based on ab initio density-functional theory calculations of the electronic band structure) with the experimental results concerning the charge-carrier mobility in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We identify the opening of additional intervalley scattering channels connecting the simultaneously filled K/K′ and Q/Q′ valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q′ valleys upon increasing electron doping.</description><identifier>ISSN: 0021-8979</identifier><identifier>EISSN: 1089-7550</identifier><identifier>DOI: 10.1063/5.0017921</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Applied physics ; Band structure of solids ; Boltzmann transport equation ; Brillouin zones ; Carrier mobility ; Channels ; Charge transport ; Complex systems ; Current carriers ; Density functional theory ; Doping ; Electrons ; Mathematical analysis ; Molybdenum disulfide ; Phase diagrams ; Scattering ; Transport equations ; Valleys</subject><ispartof>Journal of applied physics, 2020-08, Vol.128 (6)</ispartof><rights>2020 Author(s). 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The average time between two charge-carrier scattering events—the scattering lifetime—is a key parameter to describe charge transport and obtain physical insight into the behavior of such a complex system. In this paper, we combine the solution of the Boltzmann transport equation (based on ab initio density-functional theory calculations of the electronic band structure) with the experimental results concerning the charge-carrier mobility in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We identify the opening of additional intervalley scattering channels connecting the simultaneously filled K/K′ and Q/Q′ valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q′ valleys upon increasing electron doping.</description><subject>Applied physics</subject><subject>Band structure of solids</subject><subject>Boltzmann transport equation</subject><subject>Brillouin zones</subject><subject>Carrier mobility</subject><subject>Channels</subject><subject>Charge transport</subject><subject>Complex systems</subject><subject>Current carriers</subject><subject>Density functional theory</subject><subject>Doping</subject><subject>Electrons</subject><subject>Mathematical analysis</subject><subject>Molybdenum disulfide</subject><subject>Phase diagrams</subject><subject>Scattering</subject><subject>Transport equations</subject><subject>Valleys</subject><issn>0021-8979</issn><issn>1089-7550</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNpNkEFLAzEQhYMoWKsH_0HAk4etyabZbI5StAoVD9Xzkk0m7ZY0qclW2P_gjza1PXiZgffefAMPoVtKJpRU7IFPCKFClvQMjSipZSE4J-doREhJi1oKeYmuUtrkEK2ZHKGfZR-DX-FWeVPYzrnOrwoDO_AGvAYcLO7XgJNWfQ8xm9h1FvpuC7jzeKV6MPgtLEvslQ9ODRBTNsxeZ70d_m5Dhh0OM6rzGfKtnIPhP1Kvlffg0jW6sMoluDntMfp8fvqYvRSL9_nr7HFRaErKqtBaaMG4FpUEypipVW3akmlFW6vyEITyrEur7JRbySWl0jCbNaFlxWs2RndH7i6Grz2kvtmEffT5ZVNOGePTmlVVTt0fUzqGlCLYZhe7rYpDQ0lzKLvhzals9gs3QnLN</recordid><startdate>20200814</startdate><enddate>20200814</enddate><creator>Romanin, Davide</creator><creator>Brumme, Thomas</creator><creator>Daghero, Dario</creator><creator>Gonnelli, Renato S.</creator><creator>Piatti, Erik</creator><general>American Institute of Physics</general><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><orcidid>https://orcid.org/0000-0003-1094-5369</orcidid><orcidid>https://orcid.org/0000-0003-2180-7682</orcidid><orcidid>https://orcid.org/0000-0001-7108-8458</orcidid><orcidid>https://orcid.org/0000-0001-8733-5230</orcidid></search><sort><creationdate>20200814</creationdate><title>Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels</title><author>Romanin, Davide ; Brumme, Thomas ; Daghero, Dario ; Gonnelli, Renato S. ; Piatti, Erik</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1026-cc7c735c769e133d8a8db23ca1bfaa1b70151339faf45f959119d3f5137c96583</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Applied physics</topic><topic>Band structure of solids</topic><topic>Boltzmann transport equation</topic><topic>Brillouin zones</topic><topic>Carrier mobility</topic><topic>Channels</topic><topic>Charge transport</topic><topic>Complex systems</topic><topic>Current carriers</topic><topic>Density functional theory</topic><topic>Doping</topic><topic>Electrons</topic><topic>Mathematical analysis</topic><topic>Molybdenum disulfide</topic><topic>Phase diagrams</topic><topic>Scattering</topic><topic>Transport equations</topic><topic>Valleys</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Romanin, Davide</creatorcontrib><creatorcontrib>Brumme, Thomas</creatorcontrib><creatorcontrib>Daghero, Dario</creatorcontrib><creatorcontrib>Gonnelli, Renato S.</creatorcontrib><creatorcontrib>Piatti, Erik</creatorcontrib><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of applied physics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Romanin, Davide</au><au>Brumme, Thomas</au><au>Daghero, Dario</au><au>Gonnelli, Renato S.</au><au>Piatti, Erik</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels</atitle><jtitle>Journal of applied physics</jtitle><date>2020-08-14</date><risdate>2020</risdate><volume>128</volume><issue>6</issue><issn>0021-8979</issn><eissn>1089-7550</eissn><abstract>Gated molybdenum disulfide (MoS2) exhibits a rich phase diagram upon increasing electron doping, including a superconducting phase, a polaronic reconstruction of the band structure, and structural transitions away from the 2H polytype. The average time between two charge-carrier scattering events—the scattering lifetime—is a key parameter to describe charge transport and obtain physical insight into the behavior of such a complex system. In this paper, we combine the solution of the Boltzmann transport equation (based on ab initio density-functional theory calculations of the electronic band structure) with the experimental results concerning the charge-carrier mobility in order to determine the scattering lifetime in gated MoS2 nanolayers as a function of electron doping and temperature. From these dependencies, we assess the major sources of charge-carrier scattering upon increasing band filling and discover two narrow ranges of electron doping where the scattering lifetime is strongly suppressed. We identify the opening of additional intervalley scattering channels connecting the simultaneously filled K/K′ and Q/Q′ valleys in the Brillouin zone as the source of these reductions, which are triggered by the two Lifshitz transitions induced by the filling of the high-energy Q/Q′ valleys upon increasing electron doping.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0017921</doi><orcidid>https://orcid.org/0000-0003-1094-5369</orcidid><orcidid>https://orcid.org/0000-0003-2180-7682</orcidid><orcidid>https://orcid.org/0000-0001-7108-8458</orcidid><orcidid>https://orcid.org/0000-0001-8733-5230</orcidid></addata></record> |
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subjects | Applied physics Band structure of solids Boltzmann transport equation Brillouin zones Carrier mobility Channels Charge transport Complex systems Current carriers Density functional theory Doping Electrons Mathematical analysis Molybdenum disulfide Phase diagrams Scattering Transport equations Valleys |
title | Strong band-filling-dependence of the scattering lifetime in gated MoS2 nanolayers induced by the opening of intervalley scattering channels |
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