Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals
The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) i...
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Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-08, Vol.54 (8), p.975-981 |
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creator | Yurasov, D. V. Novikov, A. V. Dyakov, S. A. Stepikhova, M. V. Yablonskiy, A. N. Sergeev, S. M. Utkin, D. E. Krasilnik, Z. F. |
description | The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-
Q
resonances, for which the
Q
factor exceeds 10
3
, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals. |
doi_str_mv | 10.1134/S1063782620080254 |
format | Article |
fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2430688806</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A631724852</galeid><sourcerecordid>A631724852</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</originalsourceid><addsrcrecordid>eNp1UUtPwzAMjhBIwOAHcIvEBQ6FvNqlx2mMhzQe0uBcpam7BbUJJKnQ_gc_mIwhcUDIB1u2v8-fbYROKLmglIvLBSUFH0tWMEIkYbnYQQeUlCQrxLjc3cQFzzb1fXQYwishlMpcHKDPmV0pq6EHG7FrcVwBng-9sRA0pDxemKVVHW696_ECujabhAB93UGDb-BsYc7xg7LOhE7ZJuBmABwdvrMRvNLROIs_TFx90967BsJmxvOHy65MmhhSPXE_rVx01mg89esQVReO0F6bHBz_-BF6uZ49T2-z-ePN3XQyzzTP85iVQpd0zGSjc06ETiFjilLFBeGkHpdlzdpSKcrqWpRCCSHrQtSUNSCAKa74CJ1ued-8ex8gxOrVDT5JChUTnBRSynS2EbrYdi1VB5WxrYtpt2QN9EY7C61J-UnBkwAhc5YAdAvQ3oXgoa3evOmVX1eUVJtvVX--lTBsiwmp1y7B_0r5H_QF6HCWcg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2430688806</pqid></control><display><type>article</type><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><source>SpringerLink Journals - AutoHoldings</source><creator>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</creator><creatorcontrib>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</creatorcontrib><description>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-
Q
resonances, for which the
Q
factor exceeds 10
3
, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620080254</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>2020 ; Brillouin zones ; Broadband ; Crystal lattices ; Crystal structure ; Doppler effect ; Germanium ; Lattice parameters ; Lattice vibration ; Luminescence ; Magnetic Materials ; Magnetism ; March 10–13 ; Nizhny Novgorod ; Optical properties ; Photonic crystals ; Physics ; Physics and Astronomy ; Q factors ; Self-assembly ; Silicon ; Xxiv International Symposium “Nanophysics and Nanoelectronics”</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</citedby><cites>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620080254$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620080254$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Dyakov, S. A.</creatorcontrib><creatorcontrib>Stepikhova, M. V.</creatorcontrib><creatorcontrib>Yablonskiy, A. N.</creatorcontrib><creatorcontrib>Sergeev, S. M.</creatorcontrib><creatorcontrib>Utkin, D. E.</creatorcontrib><creatorcontrib>Krasilnik, Z. F.</creatorcontrib><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-
Q
resonances, for which the
Q
factor exceeds 10
3
, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</description><subject>2020</subject><subject>Brillouin zones</subject><subject>Broadband</subject><subject>Crystal lattices</subject><subject>Crystal structure</subject><subject>Doppler effect</subject><subject>Germanium</subject><subject>Lattice parameters</subject><subject>Lattice vibration</subject><subject>Luminescence</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>March 10–13</subject><subject>Nizhny Novgorod</subject><subject>Optical properties</subject><subject>Photonic crystals</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Q factors</subject><subject>Self-assembly</subject><subject>Silicon</subject><subject>Xxiv International Symposium “Nanophysics and Nanoelectronics”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1UUtPwzAMjhBIwOAHcIvEBQ6FvNqlx2mMhzQe0uBcpam7BbUJJKnQ_gc_mIwhcUDIB1u2v8-fbYROKLmglIvLBSUFH0tWMEIkYbnYQQeUlCQrxLjc3cQFzzb1fXQYwishlMpcHKDPmV0pq6EHG7FrcVwBng-9sRA0pDxemKVVHW696_ECujabhAB93UGDb-BsYc7xg7LOhE7ZJuBmABwdvrMRvNLROIs_TFx90967BsJmxvOHy65MmhhSPXE_rVx01mg89esQVReO0F6bHBz_-BF6uZ49T2-z-ePN3XQyzzTP85iVQpd0zGSjc06ETiFjilLFBeGkHpdlzdpSKcrqWpRCCSHrQtSUNSCAKa74CJ1ued-8ex8gxOrVDT5JChUTnBRSynS2EbrYdi1VB5WxrYtpt2QN9EY7C61J-UnBkwAhc5YAdAvQ3oXgoa3evOmVX1eUVJtvVX--lTBsiwmp1y7B_0r5H_QF6HCWcg</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Yurasov, D. V.</creator><creator>Novikov, A. V.</creator><creator>Dyakov, S. A.</creator><creator>Stepikhova, M. V.</creator><creator>Yablonskiy, A. N.</creator><creator>Sergeev, S. M.</creator><creator>Utkin, D. E.</creator><creator>Krasilnik, Z. F.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200801</creationdate><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><author>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>2020</topic><topic>Brillouin zones</topic><topic>Broadband</topic><topic>Crystal lattices</topic><topic>Crystal structure</topic><topic>Doppler effect</topic><topic>Germanium</topic><topic>Lattice parameters</topic><topic>Lattice vibration</topic><topic>Luminescence</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>March 10–13</topic><topic>Nizhny Novgorod</topic><topic>Optical properties</topic><topic>Photonic crystals</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Q factors</topic><topic>Self-assembly</topic><topic>Silicon</topic><topic>Xxiv International Symposium “Nanophysics and Nanoelectronics”</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Dyakov, S. A.</creatorcontrib><creatorcontrib>Stepikhova, M. V.</creatorcontrib><creatorcontrib>Yablonskiy, A. N.</creatorcontrib><creatorcontrib>Sergeev, S. M.</creatorcontrib><creatorcontrib>Utkin, D. E.</creatorcontrib><creatorcontrib>Krasilnik, Z. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yurasov, D. V.</au><au>Novikov, A. V.</au><au>Dyakov, S. A.</au><au>Stepikhova, M. V.</au><au>Yablonskiy, A. N.</au><au>Sergeev, S. M.</au><au>Utkin, D. E.</au><au>Krasilnik, Z. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-08-01</date><risdate>2020</risdate><volume>54</volume><issue>8</issue><spage>975</spage><epage>981</epage><pages>975-981</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high-
Q
resonances, for which the
Q
factor exceeds 10
3
, can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620080254</doi><tpages>7</tpages></addata></record> |
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subjects | 2020 Brillouin zones Broadband Crystal lattices Crystal structure Doppler effect Germanium Lattice parameters Lattice vibration Luminescence Magnetic Materials Magnetism March 10–13 Nizhny Novgorod Optical properties Photonic crystals Physics Physics and Astronomy Q factors Self-assembly Silicon Xxiv International Symposium “Nanophysics and Nanoelectronics” |
title | Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals |
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