Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals

The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Semiconductors (Woodbury, N.Y.) N.Y.), 2020-08, Vol.54 (8), p.975-981
Hauptverfasser: Yurasov, D. V., Novikov, A. V., Dyakov, S. A., Stepikhova, M. V., Yablonskiy, A. N., Sergeev, S. M., Utkin, D. E., Krasilnik, Z. F.
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page 981
container_issue 8
container_start_page 975
container_title Semiconductors (Woodbury, N.Y.)
container_volume 54
creator Yurasov, D. V.
Novikov, A. V.
Dyakov, S. A.
Stepikhova, M. V.
Yablonskiy, A. N.
Sergeev, S. M.
Utkin, D. E.
Krasilnik, Z. F.
description The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high- Q resonances, for which the Q factor exceeds 10 3 , can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.
doi_str_mv 10.1134/S1063782620080254
format Article
fullrecord <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2430688806</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A631724852</galeid><sourcerecordid>A631724852</sourcerecordid><originalsourceid>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</originalsourceid><addsrcrecordid>eNp1UUtPwzAMjhBIwOAHcIvEBQ6FvNqlx2mMhzQe0uBcpam7BbUJJKnQ_gc_mIwhcUDIB1u2v8-fbYROKLmglIvLBSUFH0tWMEIkYbnYQQeUlCQrxLjc3cQFzzb1fXQYwishlMpcHKDPmV0pq6EHG7FrcVwBng-9sRA0pDxemKVVHW696_ECujabhAB93UGDb-BsYc7xg7LOhE7ZJuBmABwdvrMRvNLROIs_TFx90967BsJmxvOHy65MmhhSPXE_rVx01mg89esQVReO0F6bHBz_-BF6uZ49T2-z-ePN3XQyzzTP85iVQpd0zGSjc06ETiFjilLFBeGkHpdlzdpSKcrqWpRCCSHrQtSUNSCAKa74CJ1ued-8ex8gxOrVDT5JChUTnBRSynS2EbrYdi1VB5WxrYtpt2QN9EY7C61J-UnBkwAhc5YAdAvQ3oXgoa3evOmVX1eUVJtvVX--lTBsiwmp1y7B_0r5H_QF6HCWcg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2430688806</pqid></control><display><type>article</type><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><source>SpringerLink Journals - AutoHoldings</source><creator>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</creator><creatorcontrib>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</creatorcontrib><description>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high- Q resonances, for which the Q factor exceeds 10 3 , can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620080254</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>2020 ; Brillouin zones ; Broadband ; Crystal lattices ; Crystal structure ; Doppler effect ; Germanium ; Lattice parameters ; Lattice vibration ; Luminescence ; Magnetic Materials ; Magnetism ; March 10–13 ; Nizhny Novgorod ; Optical properties ; Photonic crystals ; Physics ; Physics and Astronomy ; Q factors ; Self-assembly ; Silicon ; Xxiv International Symposium “Nanophysics and Nanoelectronics”</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</citedby><cites>FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620080254$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620080254$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,777,781,27905,27906,41469,42538,51300</link.rule.ids></links><search><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Dyakov, S. A.</creatorcontrib><creatorcontrib>Stepikhova, M. V.</creatorcontrib><creatorcontrib>Yablonskiy, A. N.</creatorcontrib><creatorcontrib>Sergeev, S. M.</creatorcontrib><creatorcontrib>Utkin, D. E.</creatorcontrib><creatorcontrib>Krasilnik, Z. F.</creatorcontrib><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high- Q resonances, for which the Q factor exceeds 10 3 , can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</description><subject>2020</subject><subject>Brillouin zones</subject><subject>Broadband</subject><subject>Crystal lattices</subject><subject>Crystal structure</subject><subject>Doppler effect</subject><subject>Germanium</subject><subject>Lattice parameters</subject><subject>Lattice vibration</subject><subject>Luminescence</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>March 10–13</subject><subject>Nizhny Novgorod</subject><subject>Optical properties</subject><subject>Photonic crystals</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Q factors</subject><subject>Self-assembly</subject><subject>Silicon</subject><subject>Xxiv International Symposium “Nanophysics and Nanoelectronics”</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1UUtPwzAMjhBIwOAHcIvEBQ6FvNqlx2mMhzQe0uBcpam7BbUJJKnQ_gc_mIwhcUDIB1u2v8-fbYROKLmglIvLBSUFH0tWMEIkYbnYQQeUlCQrxLjc3cQFzzb1fXQYwishlMpcHKDPmV0pq6EHG7FrcVwBng-9sRA0pDxemKVVHW696_ECujabhAB93UGDb-BsYc7xg7LOhE7ZJuBmABwdvrMRvNLROIs_TFx90967BsJmxvOHy65MmhhSPXE_rVx01mg89esQVReO0F6bHBz_-BF6uZ49T2-z-ePN3XQyzzTP85iVQpd0zGSjc06ETiFjilLFBeGkHpdlzdpSKcrqWpRCCSHrQtSUNSCAKa74CJ1ued-8ex8gxOrVDT5JChUTnBRSynS2EbrYdi1VB5WxrYtpt2QN9EY7C61J-UnBkwAhc5YAdAvQ3oXgoa3evOmVX1eUVJtvVX--lTBsiwmp1y7B_0r5H_QF6HCWcg</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>Yurasov, D. V.</creator><creator>Novikov, A. V.</creator><creator>Dyakov, S. A.</creator><creator>Stepikhova, M. V.</creator><creator>Yablonskiy, A. N.</creator><creator>Sergeev, S. M.</creator><creator>Utkin, D. E.</creator><creator>Krasilnik, Z. F.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200801</creationdate><title>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</title><author>Yurasov, D. V. ; Novikov, A. V. ; Dyakov, S. A. ; Stepikhova, M. V. ; Yablonskiy, A. N. ; Sergeev, S. M. ; Utkin, D. E. ; Krasilnik, Z. F.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-94c91728dc5304c17222a11a34030b799b2f9aa12bb494a448b64b12de4e2a3a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>2020</topic><topic>Brillouin zones</topic><topic>Broadband</topic><topic>Crystal lattices</topic><topic>Crystal structure</topic><topic>Doppler effect</topic><topic>Germanium</topic><topic>Lattice parameters</topic><topic>Lattice vibration</topic><topic>Luminescence</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>March 10–13</topic><topic>Nizhny Novgorod</topic><topic>Optical properties</topic><topic>Photonic crystals</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Q factors</topic><topic>Self-assembly</topic><topic>Silicon</topic><topic>Xxiv International Symposium “Nanophysics and Nanoelectronics”</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Yurasov, D. V.</creatorcontrib><creatorcontrib>Novikov, A. V.</creatorcontrib><creatorcontrib>Dyakov, S. A.</creatorcontrib><creatorcontrib>Stepikhova, M. V.</creatorcontrib><creatorcontrib>Yablonskiy, A. N.</creatorcontrib><creatorcontrib>Sergeev, S. M.</creatorcontrib><creatorcontrib>Utkin, D. E.</creatorcontrib><creatorcontrib>Krasilnik, Z. F.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yurasov, D. V.</au><au>Novikov, A. V.</au><au>Dyakov, S. A.</au><au>Stepikhova, M. V.</au><au>Yablonskiy, A. N.</au><au>Sergeev, S. M.</au><au>Utkin, D. E.</au><au>Krasilnik, Z. F.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-08-01</date><risdate>2020</risdate><volume>54</volume><issue>8</issue><spage>975</spage><epage>981</epage><pages>975-981</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The results of studies of the luminescence properties of two-dimensional photonic crystals formed on the basis of silicon structures with self-assembled Ge(Si) nanoislands are reported. The possibilities of substantially enhancing the luminescence response of the active medium (Ge(Si) nanoislands) in the wavelength range 1.2–1.6 μm are shown for such structures. The specific features of the luminescence response of a photonic crystal in the vicinity of the Γ point of its Brillouin zone are studied. It is shown that, along with the broadband response characteristic of the radiative modes of photonic crystals, high- Q resonances, for which the Q factor exceeds 10 3 , can also be observed in such structures. The last-mentioned resonances are observed in a certain range of lattice parameters of photonic crystals.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620080254</doi><tpages>7</tpages></addata></record>
fulltext fulltext
identifier ISSN: 1063-7826
ispartof Semiconductors (Woodbury, N.Y.), 2020-08, Vol.54 (8), p.975-981
issn 1063-7826
1090-6479
language eng
recordid cdi_proquest_journals_2430688806
source SpringerLink Journals - AutoHoldings
subjects 2020
Brillouin zones
Broadband
Crystal lattices
Crystal structure
Doppler effect
Germanium
Lattice parameters
Lattice vibration
Luminescence
Magnetic Materials
Magnetism
March 10–13
Nizhny Novgorod
Optical properties
Photonic crystals
Physics
Physics and Astronomy
Q factors
Self-assembly
Silicon
Xxiv International Symposium “Nanophysics and Nanoelectronics”
title Enhancement of the Luminescence Signal from Self-Assembled Ge(Si) Nanoislands due to Interaction with the Modes of Two-Dimensional Photonic Crystals
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-19T04%3A50%3A10IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Enhancement%20of%20the%20Luminescence%20Signal%20from%20Self-Assembled%20Ge(Si)%20Nanoislands%20due%20to%20Interaction%20with%20the%20Modes%20of%20Two-Dimensional%20Photonic%20Crystals&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Yurasov,%20D.%20V.&rft.date=2020-08-01&rft.volume=54&rft.issue=8&rft.spage=975&rft.epage=981&rft.pages=975-981&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782620080254&rft_dat=%3Cgale_proqu%3EA631724852%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2430688806&rft_id=info:pmid/&rft_galeid=A631724852&rfr_iscdi=true