Disentangling elastic and inelastic scattering pathways in the intersubband electron dynamics of n -type Ge/SiGe quantum fountains

n-type Ge/SiGe quantum wells have been suggested as a promising platform for the realization of a Si-compatible THz laser. Focusing on this material system, we have developed a numerical model to describe the intersubband carrier dynamics which restores the equilibrium after pulsed optical excitatio...

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Veröffentlicht in:	Physical review. B 2020-06, Vol.101 (24), p.1, Article 245302
Hauptverfasser:	Bagolini, Luigi, Montanari, Michele, Persichetti, Luca, Di Gaspare, Luciana, Capellini, Giovanni, Ortolani, Michele, De Seta, Monica, Virgilio, Michele
Format:	Artikel
Sprache:	eng
Schlagworte:	Coupling (molecular) Elastic scattering Excitation Inelastic scattering Numerical models Population inversion Quantum wells Silicon germanides Temperature dependence
Online-Zugang:	Volltext
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