Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers
Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), tra...
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| Veröffentlicht in: | Materials science forum 2020-07, Vol.1004, p.421-426 |
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| creator | Isshiki, Toshiyuki Kobayashi, Kenji Sako, Hideki Ohira, Kentaro |
| description | Two types of carrot defects with and without a shallow pit were found by mirror projection electron microscopy (MPJ) inspection in 4H-SiC epi wafer. Surface morphology and cross-sectional structure of prismatic stacking faults (PSFs) were investigated using MPJ and atomic force microscopy (AFM), transmission electron microscopy (TEM) and high-resolution scanning transmission electron microscopy (STEM). The depths of the surface grooves due to the PSFs, the stacking sequences around the PSFs and the structure of the Frank-type stacking faults which were connected to the PSFs were different. We discuss the difference between the two types of carrot defects. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.1004.421 |
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| subjects | Atomic force microscopy Defects Grooves Inspection Microscopes Morphology Scanning transmission electron microscopy Stacking faults Structural analysis Transmission electron microscopy |
| title | Structural Characterization of Prismatic Stacking Faults of Two Types of Carrot Defects in 4H-SiC Epi Wafers |
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