Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology
This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improvi...
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| Veröffentlicht in: | Materials science forum 2020-07, Vol.1004, p.155-160 |
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| creator | Moult, Jonathan Erlbacher, Tobias Hellinger, Carsten Corcoran, Yunji L. Rusch, Oleg |
| description | This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer. |
| doi_str_mv | 10.4028/www.scientific.net/MSF.1004.155 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2429150849</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2429150849</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2745-ee292383027cce85723b7e94c64f086a596ccf293ed2704de48954c8a1f0dc6e3</originalsourceid><addsrcrecordid>eNqNkMFKAzEURYMoWKv_EHDhaqZJJslMVlKqVaFSaCsuQ5p506bUTE2mlP69KRXcunp3cTmXdxB6oCTnhFWDw-GQR-vAd65xNvfQDd7n45wSwnMqxAXqUSlZpkrBLlGPMCEywUt5jW5i3BBS0IrKHprOoN5b51d46rMZRBc74y3gpg147kb4ybU1RLw84sXaefxpGgjY-BpPTExp6D2YLV6AXft2266Ot-iqMdsId7-3jz7Gz4vRazaZvryNhpPMspKLDIApVlQFYaW1UImSFcsSFLeSN6SSRihpbcNUATUrCa-BV0pwWxnakNpKKPro_szdhfZ7D7HTm3YffJrUjDNFBam4Sq3Hc8uGNsYAjd4F92XCUVOiTxZ1sqj_LOpkUSeL-mRRJ4uJMDwTumB87NKff0P_ZfwAanqCtw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2429150849</pqid></control><display><type>article</type><title>Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology</title><source>ProQuest Central Essentials</source><source>ProQuest Central (Alumni Edition)</source><source>ProQuest Central Student</source><source>Scientific.net Journals</source><creator>Moult, Jonathan ; Erlbacher, Tobias ; Hellinger, Carsten ; Corcoran, Yunji L. ; Rusch, Oleg</creator><creatorcontrib>Moult, Jonathan ; Erlbacher, Tobias ; Hellinger, Carsten ; Corcoran, Yunji L. ; Rusch, Oleg</creatorcontrib><description>This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.</description><identifier>ISSN: 0255-5476</identifier><identifier>ISSN: 1662-9752</identifier><identifier>EISSN: 1662-9752</identifier><identifier>DOI: 10.4028/www.scientific.net/MSF.1004.155</identifier><language>eng</language><publisher>Pfaffikon: Trans Tech Publications Ltd</publisher><subject>Contact resistance ; Electric contacts ; Electrical resistivity ; Forward characteristics ; Laser beam annealing ; Lasers ; Leakage current ; Substrates ; Thinning ; Voltage drop</subject><ispartof>Materials science forum, 2020-07, Vol.1004, p.155-160</ispartof><rights>2020 Trans Tech Publications Ltd</rights><rights>Copyright Trans Tech Publications Ltd. Jul 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2745-ee292383027cce85723b7e94c64f086a596ccf293ed2704de48954c8a1f0dc6e3</citedby><cites>FETCH-LOGICAL-c2745-ee292383027cce85723b7e94c64f086a596ccf293ed2704de48954c8a1f0dc6e3</cites><orcidid>0009-0009-4276-5785 ; 0000-0002-3835-618X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Uhttps://www.scientific.net/Image/TitleCover/5943?width=600</thumbnail><linktohtml>$$Uhttps://www.proquest.com/docview/2429150849?pq-origsite=primo$$EHTML$$P50$$Gproquest$$H</linktohtml><link.rule.ids>314,780,784,21389,21390,23256,27924,27925,33530,33703,34314,43659,43787,44067</link.rule.ids></links><search><creatorcontrib>Moult, Jonathan</creatorcontrib><creatorcontrib>Erlbacher, Tobias</creatorcontrib><creatorcontrib>Hellinger, Carsten</creatorcontrib><creatorcontrib>Corcoran, Yunji L.</creatorcontrib><creatorcontrib>Rusch, Oleg</creatorcontrib><title>Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology</title><title>Materials science forum</title><description>This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.</description><subject>Contact resistance</subject><subject>Electric contacts</subject><subject>Electrical resistivity</subject><subject>Forward characteristics</subject><subject>Laser beam annealing</subject><subject>Lasers</subject><subject>Leakage current</subject><subject>Substrates</subject><subject>Thinning</subject><subject>Voltage drop</subject><issn>0255-5476</issn><issn>1662-9752</issn><issn>1662-9752</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>ABUWG</sourceid><sourceid>AFKRA</sourceid><sourceid>AZQEC</sourceid><sourceid>BENPR</sourceid><sourceid>CCPQU</sourceid><sourceid>DWQXO</sourceid><sourceid>GNUQQ</sourceid><recordid>eNqNkMFKAzEURYMoWKv_EHDhaqZJJslMVlKqVaFSaCsuQ5p506bUTE2mlP69KRXcunp3cTmXdxB6oCTnhFWDw-GQR-vAd65xNvfQDd7n45wSwnMqxAXqUSlZpkrBLlGPMCEywUt5jW5i3BBS0IrKHprOoN5b51d46rMZRBc74y3gpg147kb4ybU1RLw84sXaefxpGgjY-BpPTExp6D2YLV6AXft2266Ot-iqMdsId7-3jz7Gz4vRazaZvryNhpPMspKLDIApVlQFYaW1UImSFcsSFLeSN6SSRihpbcNUATUrCa-BV0pwWxnakNpKKPro_szdhfZ7D7HTm3YffJrUjDNFBam4Sq3Hc8uGNsYAjd4F92XCUVOiTxZ1sqj_LOpkUSeL-mRRJ4uJMDwTumB87NKff0P_ZfwAanqCtw</recordid><startdate>20200728</startdate><enddate>20200728</enddate><creator>Moult, Jonathan</creator><creator>Erlbacher, Tobias</creator><creator>Hellinger, Carsten</creator><creator>Corcoran, Yunji L.</creator><creator>Rusch, Oleg</creator><general>Trans Tech Publications Ltd</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7SR</scope><scope>7XB</scope><scope>88I</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>M2P</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>Q9U</scope><orcidid>https://orcid.org/0009-0009-4276-5785</orcidid><orcidid>https://orcid.org/0000-0002-3835-618X</orcidid></search><sort><creationdate>20200728</creationdate><title>Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology</title><author>Moult, Jonathan ; Erlbacher, Tobias ; Hellinger, Carsten ; Corcoran, Yunji L. ; Rusch, Oleg</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2745-ee292383027cce85723b7e94c64f086a596ccf293ed2704de48954c8a1f0dc6e3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Contact resistance</topic><topic>Electric contacts</topic><topic>Electrical resistivity</topic><topic>Forward characteristics</topic><topic>Laser beam annealing</topic><topic>Lasers</topic><topic>Leakage current</topic><topic>Substrates</topic><topic>Thinning</topic><topic>Voltage drop</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Moult, Jonathan</creatorcontrib><creatorcontrib>Erlbacher, Tobias</creatorcontrib><creatorcontrib>Hellinger, Carsten</creatorcontrib><creatorcontrib>Corcoran, Yunji L.</creatorcontrib><creatorcontrib>Rusch, Oleg</creatorcontrib><collection>CrossRef</collection><collection>ProQuest Central (Corporate)</collection><collection>Engineered Materials Abstracts</collection><collection>ProQuest Central (purchase pre-March 2016)</collection><collection>Science Database (Alumni Edition)</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>ProQuest Central (Alumni) (purchase pre-March 2016)</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central (Alumni Edition)</collection><collection>ProQuest Central UK/Ireland</collection><collection>ProQuest Central Essentials</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ProQuest Central Student</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Science Database</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>ProQuest Central Basic</collection><jtitle>Materials science forum</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Moult, Jonathan</au><au>Erlbacher, Tobias</au><au>Hellinger, Carsten</au><au>Corcoran, Yunji L.</au><au>Rusch, Oleg</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology</atitle><jtitle>Materials science forum</jtitle><date>2020-07-28</date><risdate>2020</risdate><volume>1004</volume><spage>155</spage><epage>160</epage><pages>155-160</pages><issn>0255-5476</issn><issn>1662-9752</issn><eissn>1662-9752</eissn><abstract>This work presents the influence of Thin Wafer und Laser Anneal Technology on the electrical performance of 4HSiC devices. Substrate thinning and backside ohmic contact formation via laser annealing were successfully applied to in-house designed and manufactured 6 A 650 V SiC diodes at IISB, improving its forward characteristics. The given devices exhibit an on-state voltage drop (VF) reduction from 1.78 V to 1.62 V at 6 A rated current while maintaining blocking capabilities of more than 1.1 kV with leakage currents less than 1 μA at 650 V nominal voltage. On-resistance (RON) was lowered by approx. 30 % to 90 mΩ and 60 % to 12 mΩ in Schottky and conductivity modulation state, respectively. Wafer thinning also allows reducing the influence of non-homogeneous distributed substrate doping concentrations, leading to a more narrow distribution of the forward characteristics of the devices across the wafer.</abstract><cop>Pfaffikon</cop><pub>Trans Tech Publications Ltd</pub><doi>10.4028/www.scientific.net/MSF.1004.155</doi><tpages>6</tpages><orcidid>https://orcid.org/0009-0009-4276-5785</orcidid><orcidid>https://orcid.org/0000-0002-3835-618X</orcidid></addata></record> |
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| subjects | Contact resistance Electric contacts Electrical resistivity Forward characteristics Laser beam annealing Lasers Leakage current Substrates Thinning Voltage drop |
| title | Reducing On-Resistance for SiC Diodes by Thin Wafer and Laser Anneal Technology |
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