A New Permanganate-Free Slurry for GaN-SiC CMP Applications

Single crystal SiC wafers are known to be extremely difficult to polish by conventional CMP slurries because of their high hardness and chemical resistance. Previously only those manganese-containing CMP slurries are capable of producing measurable and useful polishing rates with this versatile wide...

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Veröffentlicht in:	Materials science forum 2020-07, Vol.1004, p.199-205
Hauptverfasser:	Chen, Ping Chung, Fang, Treliant, Lee, Ming Hsun
Format:	Artikel
Sprache:	eng
Schlagworte:	Alkali metals Aluminum oxide Chemical-mechanical polishing Etchants Flow velocity Formulations Gallium nitrides Halites Heavy metals Manganese Material removal rate (machining) Oxidizing agents Polishes Silicon carbide Single crystals Slurries Substrates Surface roughness Wafers Waste management Wastewater treatment Water treatment
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