Influence of Aluminum Compensation Effects in 4H-SiC on the Performance of VDMOS Transistors

The compensation of charge carriers is an important aspect to be considered in Aluminum doped areas in 4H-SiC. In this paper, a straightforward method has been found to implement compensation effects into a basic device simulation model and to improve the conformance of electrical measurement and si...

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Veröffentlicht in:	Materials science forum 2020-07, Vol.1004, p.843-849
Hauptverfasser:	Weisse, Julietta, Erlbacher, Tobias, Schlichting, Holger, Bauer, Anton J., Kocher, Matthias
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum Compensation Computer simulation Crystal defects Crystal structure Current carriers Electrical measurement MOSFETs Shielding Simulation Transistors
Online-Zugang:	Volltext
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