Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

We investigate the temperature dependence of the resistivity and Hall coefficient for heavily Al-doped p-type 4H-SiC epilayers with Al concentrations (C_Al) of > 2E19 cm^−3, which are substrates for the collectors of insulated-gate bipolar transistors. The signs of the measured Hall co- efficient...

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Veröffentlicht in:	Materials science forum 2020-07, Vol.1004, p.215-223
Hauptverfasser:	Takeshita, Akinobu, Ji, Shi Yang, Yoshida, Sadafumi, Nishihata, Rinya, Ogawa, Kohei, Imamura, Tatsuya, Kato, Tomohisa, Okumura, Hajime, Takano, Kota, Kojima, Kazutoshi, Hidaka, Atsuki, Eto, Kazuma, Matsuura, Hideharu, Okuda, Kazuya
Format:	Artikel
Sprache:	eng
Schlagworte:	Conduction bands Electrical resistivity Hall effect Hopping conduction Insulated gate bipolar transistors Low temperature Semiconductor devices Substrates Temperature Temperature dependence Valence band
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