P T -Symmetric Topological Edge-Gain Effect

We demonstrate a non-Hermitian topological effect that is characterized by having complex eigenvalues only in the edge states of a topological material, despite the fact that the material is completely uniform. Such an effect can be constructed in any topological structure formed by two gapped subsy...

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Veröffentlicht in:Physical review letters 2020-07, Vol.125 (3), p.1, Article 033603
Hauptverfasser: Song, Alex Y., Sun, Xiao-Qi, Dutt, Avik, Minkov, Momchil, Wojcik, Casey, Wang, Haiwen, Williamson, Ian A. D., Orenstein, Meir, Fan, Shanhui
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container_issue 3
container_start_page 1
container_title Physical review letters
container_volume 125
creator Song, Alex Y.
Sun, Xiao-Qi
Dutt, Avik
Minkov, Momchil
Wojcik, Casey
Wang, Haiwen
Williamson, Ian A. D.
Orenstein, Meir
Fan, Shanhui
description We demonstrate a non-Hermitian topological effect that is characterized by having complex eigenvalues only in the edge states of a topological material, despite the fact that the material is completely uniform. Such an effect can be constructed in any topological structure formed by two gapped subsystems, e.g., a quantum spin-Hall system, with a suitable non-Hermitian coupling between the spins. The resulting complex-eigenvalued edge state is robust against defects due to the topological protection. In photonics, such an effect can be used for the implementation of topological lasers, in which a uniform pumping provides gain only in the edge lasing state. Furthermore, such a topological lasing model is reciprocal and is thus compatible with standard photonic platforms.
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subjects Eigenvalues
Lasing
Photonics
Subsystems
Topology
title P T -Symmetric Topological Edge-Gain Effect
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