Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators Towards Ultralow Power Inter-Chip Optical Interconnects
An electroreflective modulator based on multiple-pass electroabsorption (EA) of coupled multiple quantum wells (CMQWs) is demonstrated for integration with low-loss polymer optical waveguides towards inter-chip and on-board optical interconnects at 850 nm. Taking advantage of coupling between quantu...
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| Veröffentlicht in: | Journal of lightwave technology 2020-07, Vol.38 (13), p.3414-3421 |
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| container_title | Journal of lightwave technology |
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| creator | Wang, Xiaoxin Yu, Shaoliang Qin, Jun Cuervo-Covian, Alejandra Zuo, Haijie Sun, Xiaochen Hu, Juejun Gu, Tian Liu, Jifeng |
| description | An electroreflective modulator based on multiple-pass electroabsorption (EA) of coupled multiple quantum wells (CMQWs) is demonstrated for integration with low-loss polymer optical waveguides towards inter-chip and on-board optical interconnects at 850 nm. Taking advantage of coupling between quantum states in MQWs, the top polymer cladding and the bottom Au mirror form a Fabry-Pérot cavity to further enhance the EA of CMQWs, thereby greatly improving the extinction ratio (ER) at a low voltage. The device achieves an ER of ∼6 dB and an insertion loss (IL) |
| doi_str_mv | 10.1109/JLT.2020.2991082 |
| format | Article |
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Taking advantage of coupling between quantum states in MQWs, the top polymer cladding and the bottom Au mirror form a Fabry-Pérot cavity to further enhance the EA of CMQWs, thereby greatly improving the extinction ratio (ER) at a low voltage. The device achieves an ER of ∼6 dB and an insertion loss (IL) <3 dB at 2 V, notably outperforming conventional surface-incident EA modulators at the same driving voltage. A further optimized modulator design can achieve a peak ER of 9-12 dB at 2 V with a low IL of 2-3 dB and a relatively broad spectral bandwidth of ∼10 nm. The low capacitance and reverse bias operation at a low voltage potentially offer ∼10× lower power consumption compared to direct modulation of 850 nm lasers. This simple surface-incident CMQW modulator is a promising candidate for integration with ultralow power inter-chip and on-board interconnect architectures.</description><identifier>ISSN: 0733-8724</identifier><identifier>EISSN: 1558-2213</identifier><identifier>DOI: 10.1109/JLT.2020.2991082</identifier><identifier>CODEN: JLTEDG</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Bandwidth ; Coupled multiple quantum wells ; Couplings ; Design optimization ; electroabsorption ; Engineering ; Erbium ; fabry-perot cavity ; Fabry-Perot interferometers ; Gallium arsenide ; Insertion loss ; Low voltage ; Modulation ; modulator ; Modulators ; optical interconnect ; Optical interconnects ; Optical waveguides ; Optics ; Polymers ; Power consumption ; Power management ; Quantum well devices ; Quantum wells ; Substrates ; Telecommunications</subject><ispartof>Journal of lightwave technology, 2020-07, Vol.38 (13), p.3414-3421</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c360t-1268ca21f47ae97d06029dfe9cb9737f6d74409ec02978dc749931bd06dc9cae3</citedby><cites>FETCH-LOGICAL-c360t-1268ca21f47ae97d06029dfe9cb9737f6d74409ec02978dc749931bd06dc9cae3</cites><orcidid>0000-0002-6072-425X ; 0000-0003-4379-2928 ; 0000-0003-3989-6927 ; 0000000339896927 ; 0000000343792928 ; 000000026072425X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9079932$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>230,314,776,780,792,881,27901,27902,54733</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9079932$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttps://www.osti.gov/biblio/1799101$$D View this record in Osti.gov$$Hfree_for_read</backlink></links><search><creatorcontrib>Wang, Xiaoxin</creatorcontrib><creatorcontrib>Yu, Shaoliang</creatorcontrib><creatorcontrib>Qin, Jun</creatorcontrib><creatorcontrib>Cuervo-Covian, Alejandra</creatorcontrib><creatorcontrib>Zuo, Haijie</creatorcontrib><creatorcontrib>Sun, Xiaochen</creatorcontrib><creatorcontrib>Hu, Juejun</creatorcontrib><creatorcontrib>Gu, Tian</creatorcontrib><creatorcontrib>Liu, Jifeng</creatorcontrib><creatorcontrib>Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)</creatorcontrib><title>Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators Towards Ultralow Power Inter-Chip Optical Interconnects</title><title>Journal of lightwave technology</title><addtitle>JLT</addtitle><description>An electroreflective modulator based on multiple-pass electroabsorption (EA) of coupled multiple quantum wells (CMQWs) is demonstrated for integration with low-loss polymer optical waveguides towards inter-chip and on-board optical interconnects at 850 nm. Taking advantage of coupling between quantum states in MQWs, the top polymer cladding and the bottom Au mirror form a Fabry-Pérot cavity to further enhance the EA of CMQWs, thereby greatly improving the extinction ratio (ER) at a low voltage. The device achieves an ER of ∼6 dB and an insertion loss (IL) <3 dB at 2 V, notably outperforming conventional surface-incident EA modulators at the same driving voltage. A further optimized modulator design can achieve a peak ER of 9-12 dB at 2 V with a low IL of 2-3 dB and a relatively broad spectral bandwidth of ∼10 nm. The low capacitance and reverse bias operation at a low voltage potentially offer ∼10× lower power consumption compared to direct modulation of 850 nm lasers. This simple surface-incident CMQW modulator is a promising candidate for integration with ultralow power inter-chip and on-board interconnect architectures.</description><subject>Bandwidth</subject><subject>Coupled multiple quantum wells</subject><subject>Couplings</subject><subject>Design optimization</subject><subject>electroabsorption</subject><subject>Engineering</subject><subject>Erbium</subject><subject>fabry-perot cavity</subject><subject>Fabry-Perot interferometers</subject><subject>Gallium arsenide</subject><subject>Insertion loss</subject><subject>Low voltage</subject><subject>Modulation</subject><subject>modulator</subject><subject>Modulators</subject><subject>optical interconnect</subject><subject>Optical interconnects</subject><subject>Optical waveguides</subject><subject>Optics</subject><subject>Polymers</subject><subject>Power consumption</subject><subject>Power management</subject><subject>Quantum well devices</subject><subject>Quantum wells</subject><subject>Substrates</subject><subject>Telecommunications</subject><issn>0733-8724</issn><issn>1558-2213</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kc1P3DAQxa2qSN1C70i9WHBtFn9lHR_RCgpoESAt5WgZZ9LNysTBdog48a_jVVac5mn0m5mneQgdUzKnlKizm9V6zggjc6YUJRX7hma0LKuCMcq_oxmRnBeVZOIH-hnjlhAqRCVn6GPlx-Kfd8n8hz946YfeQY1vB5farPDDYLo0vOAncA5fOLAp-ADNTrRvgG99PTiTfIh47UcT6ogfXQrG-RHf-xECvu4ShGK5aXt816fWGje1rO-6vCQeoYPGuAi_9vUQPV5erJdXxeru7_XyfFVYviCpoGxRWcNoI6QBJWuyIEzVDSj7rCSXzaKWQhAFNrdlVVsplOL0OXO1VdYAP0Qn014fU6ujbRPYzd6EpnL3M5qh0wnqg38dICa99UPosi_NBBOlKEvGM0UmygYfY_6G7kP7YsK7pkTvstA5C73LQu-zyCO_p5EWAL5wRfJdzvgnZRuGsA</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Wang, Xiaoxin</creator><creator>Yu, Shaoliang</creator><creator>Qin, Jun</creator><creator>Cuervo-Covian, Alejandra</creator><creator>Zuo, Haijie</creator><creator>Sun, Xiaochen</creator><creator>Hu, Juejun</creator><creator>Gu, Tian</creator><creator>Liu, Jifeng</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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| subjects | Bandwidth Coupled multiple quantum wells Couplings Design optimization electroabsorption Engineering Erbium fabry-perot cavity Fabry-Perot interferometers Gallium arsenide Insertion loss Low voltage Modulation modulator Modulators optical interconnect Optical interconnects Optical waveguides Optics Polymers Power consumption Power management Quantum well devices Quantum wells Substrates Telecommunications |
| title | Low-Voltage, Coupled Multiple Quantum Well Electroreflective Modulators Towards Ultralow Power Inter-Chip Optical Interconnects |
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