Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography
A stochastic simulation of the pattern formation process for negative-type chemically amplified resists in extreme ultraviolet (EUV) lithography has been performed. The initial structures of the resist polymers are formed by randomly bonding monomers. The deposited energy distribution in the resist...
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| Veröffentlicht in: | Journal of Photopolymer Science and Technology 2020/07/01, Vol.33(1), pp.53-56 |
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| container_title | Journal of Photopolymer Science and Technology |
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| creator | Yasuda, Masaaki Koyama, Masanori Imai, Kyohei Shirai, Masamitsu Kawata, Hiroaki Hirai, Yoshihiko |
| description | A stochastic simulation of the pattern formation process for negative-type chemically amplified resists in extreme ultraviolet (EUV) lithography has been performed. The initial structures of the resist polymers are formed by randomly bonding monomers. The deposited energy distribution in the resist by EUV light exposure is calculated by Monte Carlo simulation of the photoelectron scattering. The activation of acid generators is introduced according to the deposited energy distribution. Acid diffusion and the polymer crosslinking reactions during the post-exposure bake (PEB) are then simulated. Development of the resist is modeled by removing the polymers with a polymerization degree below the threshold value from the resist. The effects of EUV light exposure and PEB conditions on the pattern shapes are investigated by the simulation. |
| doi_str_mv | 10.2494/photopolymer.33.53 |
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The initial structures of the resist polymers are formed by randomly bonding monomers. The deposited energy distribution in the resist by EUV light exposure is calculated by Monte Carlo simulation of the photoelectron scattering. The activation of acid generators is introduced according to the deposited energy distribution. Acid diffusion and the polymer crosslinking reactions during the post-exposure bake (PEB) are then simulated. Development of the resist is modeled by removing the polymers with a polymerization degree below the threshold value from the resist. The effects of EUV light exposure and PEB conditions on the pattern shapes are investigated by the simulation.</description><identifier>ISSN: 0914-9244</identifier><identifier>EISSN: 1349-6336</identifier><identifier>DOI: 10.2494/photopolymer.33.53</identifier><language>eng</language><publisher>Hiratsuka: The Society of Photopolymer Science and Technology(SPST)</publisher><subject>Acid diffusion ; Amplification ; Computer simulation ; Critical dimension error ; Crosslinking ; Energy distribution ; Exposure ; Extreme ultraviolet lithography ; Line edge roughness ; Lithography ; Monte Carlo simulation ; Photoelectrons ; Polymer crosslinking reaction ; Polymers ; Resists ; Stochastic simulation</subject><ispartof>Journal of Photopolymer Science and Technology, 2020/07/01, Vol.33(1), pp.53-56</ispartof><rights>2020 The Society of Photopolymer Science and Technology (SPST)</rights><rights>Copyright Japan Science and Technology Agency 2020</rights><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c531t-570208eb56297de180e46202245ad1afd4044785d1d4a7ad948c349e23178c083</citedby><cites>FETCH-LOGICAL-c531t-570208eb56297de180e46202245ad1afd4044785d1d4a7ad948c349e23178c083</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,1877,27901,27902</link.rule.ids></links><search><creatorcontrib>Yasuda, Masaaki</creatorcontrib><creatorcontrib>Koyama, Masanori</creatorcontrib><creatorcontrib>Imai, Kyohei</creatorcontrib><creatorcontrib>Shirai, Masamitsu</creatorcontrib><creatorcontrib>Kawata, Hiroaki</creatorcontrib><creatorcontrib>Hirai, Yoshihiko</creatorcontrib><title>Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography</title><title>Journal of Photopolymer Science and Technology</title><addtitle>J. Photopol. Sci. Technol.</addtitle><description>A stochastic simulation of the pattern formation process for negative-type chemically amplified resists in extreme ultraviolet (EUV) lithography has been performed. The initial structures of the resist polymers are formed by randomly bonding monomers. The deposited energy distribution in the resist by EUV light exposure is calculated by Monte Carlo simulation of the photoelectron scattering. The activation of acid generators is introduced according to the deposited energy distribution. Acid diffusion and the polymer crosslinking reactions during the post-exposure bake (PEB) are then simulated. Development of the resist is modeled by removing the polymers with a polymerization degree below the threshold value from the resist. The effects of EUV light exposure and PEB conditions on the pattern shapes are investigated by the simulation.</description><subject>Acid diffusion</subject><subject>Amplification</subject><subject>Computer simulation</subject><subject>Critical dimension error</subject><subject>Crosslinking</subject><subject>Energy distribution</subject><subject>Exposure</subject><subject>Extreme ultraviolet lithography</subject><subject>Line edge roughness</subject><subject>Lithography</subject><subject>Monte Carlo simulation</subject><subject>Photoelectrons</subject><subject>Polymer crosslinking reaction</subject><subject>Polymers</subject><subject>Resists</subject><subject>Stochastic simulation</subject><issn>0914-9244</issn><issn>1349-6336</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNplkFtL5DAUgMPiwo66f8CngM-dzbVtHmUYdWFQ0ZnnENvTaYa0qUlGLOyPt1IRYZ8O5_Kdw_kQuqBkyYQSf4bWJz94N3YQlpwvJf-BFpQLleWc5ydoQRQVmWJC_EKnMR4I4VxKtUD_npKvWhOTrfCT7Y7OJOt77Bv8YFKC0ONrH7q52PiA72A_Ja-QbccB8KqFzlbGuRFfdYOzjYUaP0K0MUVse7x-SwE6wDuXgnm13kHCG5tavw9maMdz9LMxLsLvz3iGdtfr7eo229zf_F1dbbJKcpoyWRBGSniWOVNFDbQkIHJGGBPS1NQ0tSBCFKWsaS1MYWolymp6HRinRVmRkp-hy3nvEPzLEWLSB38M_XRSMzE54USpfJpi81QVfIwBGj0E25kwakr0h2X93bLmXEs-QesZOsRk9vCFmDAZdfAfQmfuqz-5Dxp6_g7IS5Ab</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Yasuda, Masaaki</creator><creator>Koyama, Masanori</creator><creator>Imai, Kyohei</creator><creator>Shirai, Masamitsu</creator><creator>Kawata, Hiroaki</creator><creator>Hirai, Yoshihiko</creator><general>The Society of Photopolymer Science and Technology(SPST)</general><general>Japan Science and Technology Agency</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20200701</creationdate><title>Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography</title><author>Yasuda, Masaaki ; Koyama, Masanori ; Imai, Kyohei ; Shirai, Masamitsu ; Kawata, Hiroaki ; Hirai, Yoshihiko</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c531t-570208eb56297de180e46202245ad1afd4044785d1d4a7ad948c349e23178c083</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Acid diffusion</topic><topic>Amplification</topic><topic>Computer simulation</topic><topic>Critical dimension error</topic><topic>Crosslinking</topic><topic>Energy distribution</topic><topic>Exposure</topic><topic>Extreme ultraviolet lithography</topic><topic>Line edge roughness</topic><topic>Lithography</topic><topic>Monte Carlo simulation</topic><topic>Photoelectrons</topic><topic>Polymer crosslinking reaction</topic><topic>Polymers</topic><topic>Resists</topic><topic>Stochastic simulation</topic><toplevel>online_resources</toplevel><creatorcontrib>Yasuda, Masaaki</creatorcontrib><creatorcontrib>Koyama, Masanori</creatorcontrib><creatorcontrib>Imai, Kyohei</creatorcontrib><creatorcontrib>Shirai, Masamitsu</creatorcontrib><creatorcontrib>Kawata, Hiroaki</creatorcontrib><creatorcontrib>Hirai, Yoshihiko</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of Photopolymer Science and Technology</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Yasuda, Masaaki</au><au>Koyama, Masanori</au><au>Imai, Kyohei</au><au>Shirai, Masamitsu</au><au>Kawata, Hiroaki</au><au>Hirai, Yoshihiko</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography</atitle><jtitle>Journal of Photopolymer Science and Technology</jtitle><addtitle>J. Photopol. Sci. Technol.</addtitle><date>2020-07-01</date><risdate>2020</risdate><volume>33</volume><issue>1</issue><spage>53</spage><epage>56</epage><pages>53-56</pages><issn>0914-9244</issn><eissn>1349-6336</eissn><abstract>A stochastic simulation of the pattern formation process for negative-type chemically amplified resists in extreme ultraviolet (EUV) lithography has been performed. The initial structures of the resist polymers are formed by randomly bonding monomers. The deposited energy distribution in the resist by EUV light exposure is calculated by Monte Carlo simulation of the photoelectron scattering. The activation of acid generators is introduced according to the deposited energy distribution. Acid diffusion and the polymer crosslinking reactions during the post-exposure bake (PEB) are then simulated. Development of the resist is modeled by removing the polymers with a polymerization degree below the threshold value from the resist. The effects of EUV light exposure and PEB conditions on the pattern shapes are investigated by the simulation.</abstract><cop>Hiratsuka</cop><pub>The Society of Photopolymer Science and Technology(SPST)</pub><doi>10.2494/photopolymer.33.53</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
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| subjects | Acid diffusion Amplification Computer simulation Critical dimension error Crosslinking Energy distribution Exposure Extreme ultraviolet lithography Line edge roughness Lithography Monte Carlo simulation Photoelectrons Polymer crosslinking reaction Polymers Resists Stochastic simulation |
| title | Stochastic Simulation of Pattern Formation for Negative-Type Chemically Amplified Resists in Extreme Ultraviolet Lithography |
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