Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer

The low internal quantum efficiency ( IQE ) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low IQE include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking...

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Veröffentlicht in:	Optoelectronics letters 2020-07, Vol.16 (4), p.279-283
Hauptverfasser:	Huang, Ping-yang, Xiao, Long-fei, Chen, Xiu-fang, Wang, Qing-pu, Xu, Ming-sheng, Xu, Xian-gang, Huang, Jing
Format:	Artikel
Sprache:	eng
Schlagworte:	Carrier density Composition Energy bands Lasers Light emitting diodes Optical Devices Optics Photonics Physics Physics and Astronomy Quantum efficiency Quantum wells Radiative recombination Ultraviolet radiation
Online-Zugang:	Volltext
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