Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer
The low internal quantum efficiency ( IQE ) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low IQE include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking...
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| Veröffentlicht in: | Optoelectronics letters 2020-07, Vol.16 (4), p.279-283 |
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| creator | Huang, Ping-yang Xiao, Long-fei Chen, Xiu-fang Wang, Qing-pu Xu, Ming-sheng Xu, Xian-gang Huang, Jing |
| description | The low internal quantum efficiency (
IQE
) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low
IQE
include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the
IQE
of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs. |
| doi_str_mv | 10.1007/s11801-020-0072-4 |
| format | Article |
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IQE
) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low
IQE
include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the
IQE
of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs.</description><identifier>ISSN: 1673-1905</identifier><identifier>EISSN: 1993-5013</identifier><identifier>DOI: 10.1007/s11801-020-0072-4</identifier><language>eng</language><publisher>Tianjin: Tianjin University of Technology</publisher><subject>Carrier density ; Composition ; Energy bands ; Lasers ; Light emitting diodes ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy ; Quantum efficiency ; Quantum wells ; Radiative recombination ; Ultraviolet radiation</subject><ispartof>Optoelectronics letters, 2020-07, Vol.16 (4), p.279-283</ispartof><rights>Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2020</rights><rights>Tianjin University of Technology and Springer-Verlag GmbH Germany, part of Springer Nature 2020.</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c316t-c646757f83690d697c670a9181c888005df107c2e94a2bb4c190f5f6170897553</citedby><cites>FETCH-LOGICAL-c316t-c646757f83690d697c670a9181c888005df107c2e94a2bb4c190f5f6170897553</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11801-020-0072-4$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11801-020-0072-4$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Huang, Ping-yang</creatorcontrib><creatorcontrib>Xiao, Long-fei</creatorcontrib><creatorcontrib>Chen, Xiu-fang</creatorcontrib><creatorcontrib>Wang, Qing-pu</creatorcontrib><creatorcontrib>Xu, Ming-sheng</creatorcontrib><creatorcontrib>Xu, Xian-gang</creatorcontrib><creatorcontrib>Huang, Jing</creatorcontrib><title>Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer</title><title>Optoelectronics letters</title><addtitle>Optoelectron. Lett</addtitle><description>The low internal quantum efficiency (
IQE
) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low
IQE
include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the
IQE
of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs.</description><subject>Carrier density</subject><subject>Composition</subject><subject>Energy bands</subject><subject>Lasers</subject><subject>Light emitting diodes</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Quantum efficiency</subject><subject>Quantum wells</subject><subject>Radiative recombination</subject><subject>Ultraviolet radiation</subject><issn>1673-1905</issn><issn>1993-5013</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1UMtOwzAQjBBIVNAP4GaJs2HXSez4WJVSkCq4wNlyHbukSuNiJ0X9e1yCxIm97EMzs5rJshuEOwQQ9xGxAqTAgKaV0eIsm6CUOS0B8_M0c5FTlFBeZtMYt5AqZ6Iq5CTrFs41prGdOZJmtw_-YHe264l3ZNYu9Qtd62hrUlu7J0PbB31ofGt7slo8RPLV9B9kE3Q96DbBqfG7vY9N3_huZBPju3owP4dWH224zi6cbqOd_var7P1x8TZ_oqvX5fN8tqImR95TwwsuSuGqnEuouRSGC9ASKzRVVQGUtUMQhllZaLZeFyaZc6XjKKCSoizzq-x21E2OPgcbe7X1Q-jSS8UKxgrkgCcUjigTfIzBOrUPzU6Ho0JQp2TVmKxKyapTsqpIHDZyYsJ2Gxv-lP8nfQOhlnoB</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Huang, Ping-yang</creator><creator>Xiao, Long-fei</creator><creator>Chen, Xiu-fang</creator><creator>Wang, Qing-pu</creator><creator>Xu, Ming-sheng</creator><creator>Xu, Xian-gang</creator><creator>Huang, Jing</creator><general>Tianjin University of Technology</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200701</creationdate><title>Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer</title><author>Huang, Ping-yang ; Xiao, Long-fei ; Chen, Xiu-fang ; Wang, Qing-pu ; Xu, Ming-sheng ; Xu, Xian-gang ; Huang, Jing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c316t-c646757f83690d697c670a9181c888005df107c2e94a2bb4c190f5f6170897553</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Carrier density</topic><topic>Composition</topic><topic>Energy bands</topic><topic>Lasers</topic><topic>Light emitting diodes</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Quantum efficiency</topic><topic>Quantum wells</topic><topic>Radiative recombination</topic><topic>Ultraviolet radiation</topic><toplevel>online_resources</toplevel><creatorcontrib>Huang, Ping-yang</creatorcontrib><creatorcontrib>Xiao, Long-fei</creatorcontrib><creatorcontrib>Chen, Xiu-fang</creatorcontrib><creatorcontrib>Wang, Qing-pu</creatorcontrib><creatorcontrib>Xu, Ming-sheng</creatorcontrib><creatorcontrib>Xu, Xian-gang</creatorcontrib><creatorcontrib>Huang, Jing</creatorcontrib><collection>CrossRef</collection><jtitle>Optoelectronics letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Huang, Ping-yang</au><au>Xiao, Long-fei</au><au>Chen, Xiu-fang</au><au>Wang, Qing-pu</au><au>Xu, Ming-sheng</au><au>Xu, Xian-gang</au><au>Huang, Jing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer</atitle><jtitle>Optoelectronics letters</jtitle><stitle>Optoelectron. Lett</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>16</volume><issue>4</issue><spage>279</spage><epage>283</epage><pages>279-283</pages><issn>1673-1905</issn><eissn>1993-5013</eissn><abstract>The low internal quantum efficiency (
IQE
) of AlGaN-based deep ultraviolet light emitting diode (DUV-LED) limits its wider application. The main reasons for low
IQE
include low carrier concentration, poor carrier location and large defects. The bending of energy band between AlGaN electron blocking layer and conduction layer obstructs transport of holes to multiple quantum wells. In this paper, we propose a gradual Al-composition p-type AlGaN (p-AlGaN) conduction layer to improve the light emitting properties of AlGaN-based DUV-LED. Increased carrier concentration in the active region enhances the effective radiative recombination rate of the LED. Consequently, the
IQE
of our optimazited DUV-LED is increased by 162% in comparison with conventional DUV-LEDs.</abstract><cop>Tianjin</cop><pub>Tianjin University of Technology</pub><doi>10.1007/s11801-020-0072-4</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1673-1905 |
| ispartof | Optoelectronics letters, 2020-07, Vol.16 (4), p.279-283 |
| issn | 1673-1905 1993-5013 |
| language | eng |
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| source | SpringerNature Complete Journals; Alma/SFX Local Collection |
| subjects | Carrier density Composition Energy bands Lasers Light emitting diodes Optical Devices Optics Photonics Physics Physics and Astronomy Quantum efficiency Quantum wells Radiative recombination Ultraviolet radiation |
| title | Efficiency improvement of AlGaN-based deep ultraviolet LEDs with gradual Al-composition AlGaN conduction layer |
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