High-Gain Ultraviolet Avalanche Photodiodes Using a ZnSe-Based Organic–Inorganic Hybrid Structure

We have developed high-gain and highly sensitive ZnSe-based organic–inorganic hybrid ultraviolet avalanche photodiodes (UV-APDs). The inorganic ZnSe-based wafers (i-ZnSSe active layer/n-ZnSSe) were grown by molecular beam epitaxy (MBE) on n -type GaAs substrates. The inorganic UV-transparent conduct...

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Veröffentlicht in:	Journal of electronic materials 2020-08, Vol.49 (8), p.4589-4593
Hauptverfasser:	Ichikawa, Yuki, Tanaka, Keita, Nakagawa, Kazuki, Fujii, Yuta, Yoshida, Kentaro, Nakamura, Kaiki, Miyazaki, Ryuichi, Abe, Tomoki, Kasada, Hirofumi, Ichino, Kunio, Akaiwa, Kazuaki
Format:	Artikel
Sprache:	eng
Schlagworte:	19th International Conference on II-VI Compounds and Related Materials Avalanche diodes Characterization and Evaluation of Materials Chemistry and Materials Science Conducting polymers Electronics and Microelectronics Epitaxial growth Hybrid structures Inkjet printing Instrumentation Leakage current Materials Science Molecular beam epitaxy Multiplication Optical and Electronic Materials Photodiodes Photolithography Quantum efficiency Solid State Physics Spin coating Substrates Topical Collection: 19th International Conference on II-VI Compounds
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