Facile Synthesis and Structural, Linear and Nonlinear Optical Investigation of p-type Cu2ZnGeS4 Thin Films as a Potential Absorber Layer for Solar Cells
The fabrication of new kesterite absorber layers has drawn tremendous attention among a number of researchers. This article reports the preparation of good-quality copper zinc germanium sulfide Cu 2 ZnGeS 4 (CZGS 4 ) thin films via a convenient spray pyrolysis method. The fabrication of an Al/ n -Si...
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| Veröffentlicht in: | Journal of electronic materials 2020-08, Vol.49 (8), p.4843-4851 |
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| creator | El Radaf, I. M. Al-Zahrani, H. Y. S. |
| description | The fabrication of new kesterite absorber layers has drawn tremendous attention among a number of researchers. This article reports the preparation of good-quality copper zinc germanium sulfide Cu
2
ZnGeS
4
(CZGS
4
) thin films via a convenient spray pyrolysis method. The fabrication of an Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction is also presented. X-ray diffraction results confirmed the tetragonal structure in the CZGS
4
samples. Additionally, energy-dispersive x-ray examination illustrated that the Cu
2
ZnGeS
4
samples possess a nearly stoichiometric composition. From the transmittance and reflectance data, the energy gap (
E
g
), refractive index (
n
) and absorption coefficient (
α
) were assessed. According to the Tauc relation, the Cu
2
ZnGeS
4
thin samples exhibit a direct optical transition. The energy gap values were found to be in the range of 1.52–1.27 eV. The dispersion and nonlinear optical parameters of the Cu
2
ZnGeS
4
samples were also investigated. Electrical studies showed that the Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction has good rectifying properties, with efficiency of 3.3%. |
| doi_str_mv | 10.1007/s11664-020-08204-9 |
| format | Article |
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2
ZnGeS
4
(CZGS
4
) thin films via a convenient spray pyrolysis method. The fabrication of an Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction is also presented. X-ray diffraction results confirmed the tetragonal structure in the CZGS
4
samples. Additionally, energy-dispersive x-ray examination illustrated that the Cu
2
ZnGeS
4
samples possess a nearly stoichiometric composition. From the transmittance and reflectance data, the energy gap (
E
g
), refractive index (
n
) and absorption coefficient (
α
) were assessed. According to the Tauc relation, the Cu
2
ZnGeS
4
thin samples exhibit a direct optical transition. The energy gap values were found to be in the range of 1.52–1.27 eV. The dispersion and nonlinear optical parameters of the Cu
2
ZnGeS
4
samples were also investigated. Electrical studies showed that the Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction has good rectifying properties, with efficiency of 3.3%.</description><identifier>ISSN: 0361-5235</identifier><identifier>EISSN: 1543-186X</identifier><identifier>DOI: 10.1007/s11664-020-08204-9</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Absorbers ; Absorptivity ; Aluminum ; Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Dispersion ; Electronics and Microelectronics ; Energy gap ; Germanium ; Heterojunctions ; Instrumentation ; Materials Science ; Nonlinear optics ; Optical and Electronic Materials ; Optical transition ; Photovoltaic cells ; Refractivity ; Silicon ; Solar cells ; Solid State Physics ; Spray pyrolysis ; Thin films</subject><ispartof>Journal of electronic materials, 2020-08, Vol.49 (8), p.4843-4851</ispartof><rights>The Minerals, Metals & Materials Society 2020</rights><rights>The Minerals, Metals & Materials Society 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-4f3975ee4b7f88f2092286160025518b890cd3aac8a28bb5fbff49c525cd9123</citedby><cites>FETCH-LOGICAL-c319t-4f3975ee4b7f88f2092286160025518b890cd3aac8a28bb5fbff49c525cd9123</cites><orcidid>0000-0003-1273-4821</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11664-020-08204-9$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11664-020-08204-9$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>El Radaf, I. M.</creatorcontrib><creatorcontrib>Al-Zahrani, H. Y. S.</creatorcontrib><title>Facile Synthesis and Structural, Linear and Nonlinear Optical Investigation of p-type Cu2ZnGeS4 Thin Films as a Potential Absorber Layer for Solar Cells</title><title>Journal of electronic materials</title><addtitle>Journal of Elec Materi</addtitle><description>The fabrication of new kesterite absorber layers has drawn tremendous attention among a number of researchers. This article reports the preparation of good-quality copper zinc germanium sulfide Cu
2
ZnGeS
4
(CZGS
4
) thin films via a convenient spray pyrolysis method. The fabrication of an Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction is also presented. X-ray diffraction results confirmed the tetragonal structure in the CZGS
4
samples. Additionally, energy-dispersive x-ray examination illustrated that the Cu
2
ZnGeS
4
samples possess a nearly stoichiometric composition. From the transmittance and reflectance data, the energy gap (
E
g
), refractive index (
n
) and absorption coefficient (
α
) were assessed. According to the Tauc relation, the Cu
2
ZnGeS
4
thin samples exhibit a direct optical transition. The energy gap values were found to be in the range of 1.52–1.27 eV. The dispersion and nonlinear optical parameters of the Cu
2
ZnGeS
4
samples were also investigated. Electrical studies showed that the Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction has good rectifying properties, with efficiency of 3.3%.</description><subject>Absorbers</subject><subject>Absorptivity</subject><subject>Aluminum</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Dispersion</subject><subject>Electronics and Microelectronics</subject><subject>Energy gap</subject><subject>Germanium</subject><subject>Heterojunctions</subject><subject>Instrumentation</subject><subject>Materials Science</subject><subject>Nonlinear optics</subject><subject>Optical and Electronic Materials</subject><subject>Optical transition</subject><subject>Photovoltaic cells</subject><subject>Refractivity</subject><subject>Silicon</subject><subject>Solar cells</subject><subject>Solid State Physics</subject><subject>Spray pyrolysis</subject><subject>Thin films</subject><issn>0361-5235</issn><issn>1543-186X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>8G5</sourceid><sourceid>BENPR</sourceid><sourceid>GUQSH</sourceid><sourceid>M2O</sourceid><recordid>eNp9UctqHDEQFCYBb5z8QE6CXC1bzxnN0SxZ27DYgd1DyEVotJItI0sTSWPYP8nnRvYYcgs03XRTVU1RAHwl-IJg3F8WQrqOI0wxwpJijoYTsCKCM0Rk9_MDWGHWESQoE6fgUylPGBNBJFmBPxttfLBwd4z10RZfoI4HuKt5NnXOOpzDrY9W57fzXYph2e6n6o0O8Da-2FL9g64-RZgcnFA9ThauZ_orXtsdh_tHH-HGh-em3Ar-SNXG6hv3aiwpjzbDrT627lKGuxSa-NqGUD6Dj06HYr-8zzOw33zfr2_Q9v76dn21RYaRoSLu2NALa_nYOykdxQOlsiMdxlQ0h6McsDkwrY3UVI6jcKNzfDCCCnMYCGVn4NsiO-X0e25e1FOac2wfFeUUM8Z70TcUXVAmp1KydWrK_lnnoyJYvQaglgBUC0C9BaCGRmILqTRwfLD5n_R_WH8BCOCJXg</recordid><startdate>20200801</startdate><enddate>20200801</enddate><creator>El Radaf, I. M.</creator><creator>Al-Zahrani, H. Y. S.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>3V.</scope><scope>7XB</scope><scope>88I</scope><scope>8AF</scope><scope>8AO</scope><scope>8FE</scope><scope>8FG</scope><scope>8FK</scope><scope>8G5</scope><scope>ABJCF</scope><scope>ABUWG</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>AZQEC</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>GNUQQ</scope><scope>GUQSH</scope><scope>HCIFZ</scope><scope>KB.</scope><scope>L6V</scope><scope>M2O</scope><scope>M2P</scope><scope>M7S</scope><scope>MBDVC</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>PTHSS</scope><scope>Q9U</scope><scope>S0X</scope><orcidid>https://orcid.org/0000-0003-1273-4821</orcidid></search><sort><creationdate>20200801</creationdate><title>Facile Synthesis and Structural, Linear and Nonlinear Optical Investigation of p-type Cu2ZnGeS4 Thin Films as a Potential Absorber Layer for Solar Cells</title><author>El Radaf, I. M. ; Al-Zahrani, H. Y. S.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-4f3975ee4b7f88f2092286160025518b890cd3aac8a28bb5fbff49c525cd9123</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Absorbers</topic><topic>Absorptivity</topic><topic>Aluminum</topic><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Dispersion</topic><topic>Electronics and Microelectronics</topic><topic>Energy gap</topic><topic>Germanium</topic><topic>Heterojunctions</topic><topic>Instrumentation</topic><topic>Materials Science</topic><topic>Nonlinear optics</topic><topic>Optical and Electronic Materials</topic><topic>Optical transition</topic><topic>Photovoltaic cells</topic><topic>Refractivity</topic><topic>Silicon</topic><topic>Solar cells</topic><topic>Solid State Physics</topic><topic>Spray pyrolysis</topic><topic>Thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>El Radaf, I. M.</creatorcontrib><creatorcontrib>Al-Zahrani, H. Y. 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M.</au><au>Al-Zahrani, H. Y. S.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Facile Synthesis and Structural, Linear and Nonlinear Optical Investigation of p-type Cu2ZnGeS4 Thin Films as a Potential Absorber Layer for Solar Cells</atitle><jtitle>Journal of electronic materials</jtitle><stitle>Journal of Elec Materi</stitle><date>2020-08-01</date><risdate>2020</risdate><volume>49</volume><issue>8</issue><spage>4843</spage><epage>4851</epage><pages>4843-4851</pages><issn>0361-5235</issn><eissn>1543-186X</eissn><abstract>The fabrication of new kesterite absorber layers has drawn tremendous attention among a number of researchers. This article reports the preparation of good-quality copper zinc germanium sulfide Cu
2
ZnGeS
4
(CZGS
4
) thin films via a convenient spray pyrolysis method. The fabrication of an Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction is also presented. X-ray diffraction results confirmed the tetragonal structure in the CZGS
4
samples. Additionally, energy-dispersive x-ray examination illustrated that the Cu
2
ZnGeS
4
samples possess a nearly stoichiometric composition. From the transmittance and reflectance data, the energy gap (
E
g
), refractive index (
n
) and absorption coefficient (
α
) were assessed. According to the Tauc relation, the Cu
2
ZnGeS
4
thin samples exhibit a direct optical transition. The energy gap values were found to be in the range of 1.52–1.27 eV. The dispersion and nonlinear optical parameters of the Cu
2
ZnGeS
4
samples were also investigated. Electrical studies showed that the Al/
n
-Si/Cu
2
ZnGeS
4
/Au heterojunction has good rectifying properties, with efficiency of 3.3%.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11664-020-08204-9</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0003-1273-4821</orcidid></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2020-08, Vol.49 (8), p.4843-4851 |
| issn | 0361-5235 1543-186X |
| language | eng |
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| source | SpringerLink Journals |
| subjects | Absorbers Absorptivity Aluminum Characterization and Evaluation of Materials Chemistry and Materials Science Dispersion Electronics and Microelectronics Energy gap Germanium Heterojunctions Instrumentation Materials Science Nonlinear optics Optical and Electronic Materials Optical transition Photovoltaic cells Refractivity Silicon Solar cells Solid State Physics Spray pyrolysis Thin films |
| title | Facile Synthesis and Structural, Linear and Nonlinear Optical Investigation of p-type Cu2ZnGeS4 Thin Films as a Potential Absorber Layer for Solar Cells |
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