Localization and Nature of Radiation Donor Defects in the Arsenic Implanted Cdhgte Films Grown by MBE

By profiling the electrical parameters of the arsenic implanted CdHgTe films, grown by molecular beam epitaxy, and comparing the obtained data with the results of studies performed by secondary ion mass spectroscopy and transmission electron microscopy, the localization and nature of donor defects f...

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Veröffentlicht in:	Russian physics journal 2020-06, Vol.63 (2), p.290-295
Hauptverfasser:	Izhnin, I. I., Fitsych, O. I., Voitsekhovskii, A. V., Korotaev, A. G., Mynbaev, K. D., Kurbanov, K. R., Varavin, V. S., Dvoretskii, S. A., Mikhailov, N. N., Remesnik, V. G., Yakushev, M. V., Bonchyk, O. Yu, Savytskyy, H. V., Świątek, Z., Morgiel, J.
Format:	Artikel
Sprache:	eng
Schlagworte:	Arsenic Condensed Matter Physics Dislocation loops Electrons Epitaxial growth Epitaxy Hadrons Heavy Ions Implantation Lasers Localization Mass spectrometry Mathematical and Computational Physics Molecular beam epitaxy Nuclear Physics Optical Devices Optics Photonics Physics Physics and Astronomy Point defects Radiation Secondary ion mass spectroscopy Theoretical
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