Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement

A cryogenic investigation of the Kink effect with drain-source bias sweeping process during output characteristics is suggested. An exhaustive study of the field effect dependence on the emission rate from hole traps in AlGaN/GaN HEMT transistors has been realized by means of current DLTS spectrosco...

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Veröffentlicht in:	Applied physics. A, Materials science & processing Materials science & processing, 2020-07, Vol.126 (7), Article 570
Hauptverfasser:	Jabbari, I., Baira, M., Maaref, H.
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Applied physics Buffer layers Characterization and Evaluation of Materials Condensed Matter Physics Dependence Emission analysis Gallium nitrides High electron mobility transistors Hole traps Machines Manufacturing Materials science Nanotechnology Optical and Electronic Materials Physics Physics and Astronomy Processes Semiconductor devices Surfaces and Interfaces Thin Films Trapping Valence band
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