Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes
The cobalt sulfate-polyvinylpyrrolidone (CoSO 4 -PVP) solution was deposited on n-Si crystal by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO 4 -PVP)/n-Si MPS diode were investigated both in the dark and under illumination (100 mW/cm 2 ) level. MPS-type diode exhi...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-07, Vol.31 (14), p.11665-11672 |
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| creator | Tataroğlu, A. Altındal, Ş. Azizian-Kalandaragh, Y. |
| description | The cobalt sulfate-polyvinylpyrrolidone (CoSO
4
-PVP) solution was deposited on n-Si crystal by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO
4
-PVP)/n-Si MPS diode were investigated both in the dark and under illumination (100 mW/cm
2
) level. MPS-type diode exhibits good rectifying behavior in dark condition. The measured reverse current under illumination was found to be higher than dark condition. The MPS diode has also a good response to the illumination and photosensitivity value was found as 5.25 × 10
3
for 100 mW/cm
2
. The diode parameters such as
n
,
Φ
b0
and
R
s
were extracted based on both the thermionic-emission (TE) and Norde method. The current conduction mechanisms of the MPS diode were also analyzed by forward ln(I
F
)-ln(V
F
) and reverse ln(I
R
)-V
R
1/2
plots. Moreover, both the voltage dependence of C and G characteristics were investigated under 1 MHz. The other electrical parameters such as
V
0
,
V
D
,
N
D
,
E
F
,
W
D
and
Φ
B
were extracted from the C
−2
–V characteristics. Besides, the voltage dependence profile of the N
ss
was extracted by using dark-illumination capacitance (C
dark
-C
ill
) measurements at a frequency of 1 MHz. The results suggest that the prepared Au/(CoSO
4
-PVP)/n-Si MPS diode can be used in optoelectronic device applications. |
| doi_str_mv | 10.1007/s10854-020-03718-8 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2418450827</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2418450827</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-84d5236059a19aa9c2eb27b0ae07767f97d7e0a094451187dc01330a76c33cf43</originalsourceid><addsrcrecordid>eNp9kEtLxDAUhYMoOI7-AVcB19GbR5t0KcP4gJEpjIq7kElvtUNtalIX8--tVnDn6m6-c87lI-ScwyUH0FeJg8kUAwEMpOaGmQMy45mWTBnxckhmUGSaqUyIY3KS0g4AciXNjJTLFv0QG-9a6rqK9m9hCBFTH7qEtI-hxzg0mGio6SJs1oqVzyVtugFj6_YY6dYlrOhDuaFVEypMp-Sodm3Cs987J083y8fFHVutb-8X1yvmJS8GZlSVCZlDVjheOFd4gVuht-AQtM51XehKIzgolMo4N7rywKUEp3Mvpa-VnJOLqXf88eMT02B34TN246QVihuVgRF6pMRE-RhSiljbPjbvLu4tB_ttzk7m7GjO_pizZgzJKZRGuHvF-Ff9T-oLIlJvrQ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2418450827</pqid></control><display><type>article</type><title>Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes</title><source>SpringerLink Journals - AutoHoldings</source><creator>Tataroğlu, A. ; Altındal, Ş. ; Azizian-Kalandaragh, Y.</creator><creatorcontrib>Tataroğlu, A. ; Altındal, Ş. ; Azizian-Kalandaragh, Y.</creatorcontrib><description>The cobalt sulfate-polyvinylpyrrolidone (CoSO
4
-PVP) solution was deposited on n-Si crystal by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO
4
-PVP)/n-Si MPS diode were investigated both in the dark and under illumination (100 mW/cm
2
) level. MPS-type diode exhibits good rectifying behavior in dark condition. The measured reverse current under illumination was found to be higher than dark condition. The MPS diode has also a good response to the illumination and photosensitivity value was found as 5.25 × 10
3
for 100 mW/cm
2
. The diode parameters such as
n
,
Φ
b0
and
R
s
were extracted based on both the thermionic-emission (TE) and Norde method. The current conduction mechanisms of the MPS diode were also analyzed by forward ln(I
F
)-ln(V
F
) and reverse ln(I
R
)-V
R
1/2
plots. Moreover, both the voltage dependence of C and G characteristics were investigated under 1 MHz. The other electrical parameters such as
V
0
,
V
D
,
N
D
,
E
F
,
W
D
and
Φ
B
were extracted from the C
−2
–V characteristics. Besides, the voltage dependence profile of the N
ss
was extracted by using dark-illumination capacitance (C
dark
-C
ill
) measurements at a frequency of 1 MHz. The results suggest that the prepared Au/(CoSO
4
-PVP)/n-Si MPS diode can be used in optoelectronic device applications.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-020-03718-8</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Cobalt sulfate ; Dependence ; Diodes ; Electric potential ; Illumination ; Interlayers ; Materials Science ; Optical and Electronic Materials ; Optoelectronic devices ; Parameters ; Photosensitivity ; Polyvinylpyrrolidone ; Spin coating ; Voltage</subject><ispartof>Journal of materials science. Materials in electronics, 2020-07, Vol.31 (14), p.11665-11672</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-84d5236059a19aa9c2eb27b0ae07767f97d7e0a094451187dc01330a76c33cf43</citedby><cites>FETCH-LOGICAL-c319t-84d5236059a19aa9c2eb27b0ae07767f97d7e0a094451187dc01330a76c33cf43</cites><orcidid>0000-0003-2074-574X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s10854-020-03718-8$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s10854-020-03718-8$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Tataroğlu, A.</creatorcontrib><creatorcontrib>Altındal, Ş.</creatorcontrib><creatorcontrib>Azizian-Kalandaragh, Y.</creatorcontrib><title>Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The cobalt sulfate-polyvinylpyrrolidone (CoSO
4
-PVP) solution was deposited on n-Si crystal by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO
4
-PVP)/n-Si MPS diode were investigated both in the dark and under illumination (100 mW/cm
2
) level. MPS-type diode exhibits good rectifying behavior in dark condition. The measured reverse current under illumination was found to be higher than dark condition. The MPS diode has also a good response to the illumination and photosensitivity value was found as 5.25 × 10
3
for 100 mW/cm
2
. The diode parameters such as
n
,
Φ
b0
and
R
s
were extracted based on both the thermionic-emission (TE) and Norde method. The current conduction mechanisms of the MPS diode were also analyzed by forward ln(I
F
)-ln(V
F
) and reverse ln(I
R
)-V
R
1/2
plots. Moreover, both the voltage dependence of C and G characteristics were investigated under 1 MHz. The other electrical parameters such as
V
0
,
V
D
,
N
D
,
E
F
,
W
D
and
Φ
B
were extracted from the C
−2
–V characteristics. Besides, the voltage dependence profile of the N
ss
was extracted by using dark-illumination capacitance (C
dark
-C
ill
) measurements at a frequency of 1 MHz. The results suggest that the prepared Au/(CoSO
4
-PVP)/n-Si MPS diode can be used in optoelectronic device applications.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Cobalt sulfate</subject><subject>Dependence</subject><subject>Diodes</subject><subject>Electric potential</subject><subject>Illumination</subject><subject>Interlayers</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><subject>Optoelectronic devices</subject><subject>Parameters</subject><subject>Photosensitivity</subject><subject>Polyvinylpyrrolidone</subject><subject>Spin coating</subject><subject>Voltage</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kEtLxDAUhYMoOI7-AVcB19GbR5t0KcP4gJEpjIq7kElvtUNtalIX8--tVnDn6m6-c87lI-ScwyUH0FeJg8kUAwEMpOaGmQMy45mWTBnxckhmUGSaqUyIY3KS0g4AciXNjJTLFv0QG-9a6rqK9m9hCBFTH7qEtI-hxzg0mGio6SJs1oqVzyVtugFj6_YY6dYlrOhDuaFVEypMp-Sodm3Cs987J083y8fFHVutb-8X1yvmJS8GZlSVCZlDVjheOFd4gVuht-AQtM51XehKIzgolMo4N7rywKUEp3Mvpa-VnJOLqXf88eMT02B34TN246QVihuVgRF6pMRE-RhSiljbPjbvLu4tB_ttzk7m7GjO_pizZgzJKZRGuHvF-Ff9T-oLIlJvrQ</recordid><startdate>20200701</startdate><enddate>20200701</enddate><creator>Tataroğlu, A.</creator><creator>Altındal, Ş.</creator><creator>Azizian-Kalandaragh, Y.</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0003-2074-574X</orcidid></search><sort><creationdate>20200701</creationdate><title>Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes</title><author>Tataroğlu, A. ; Altındal, Ş. ; Azizian-Kalandaragh, Y.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-84d5236059a19aa9c2eb27b0ae07767f97d7e0a094451187dc01330a76c33cf43</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Cobalt sulfate</topic><topic>Dependence</topic><topic>Diodes</topic><topic>Electric potential</topic><topic>Illumination</topic><topic>Interlayers</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><topic>Optoelectronic devices</topic><topic>Parameters</topic><topic>Photosensitivity</topic><topic>Polyvinylpyrrolidone</topic><topic>Spin coating</topic><topic>Voltage</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Tataroğlu, A.</creatorcontrib><creatorcontrib>Altındal, Ş.</creatorcontrib><creatorcontrib>Azizian-Kalandaragh, Y.</creatorcontrib><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>ProQuest SciTech Collection</collection><collection>ProQuest Technology Collection</collection><collection>Materials Science & Engineering Collection</collection><collection>ProQuest Central UK/Ireland</collection><collection>Advanced Technologies & Aerospace Collection</collection><collection>ProQuest Central</collection><collection>Technology Collection</collection><collection>ProQuest One Community College</collection><collection>ProQuest Materials Science Collection</collection><collection>ProQuest Central Korea</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><collection>SciTech Premium Collection</collection><collection>Materials Research Database</collection><collection>Materials Science Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Advanced Technologies & Aerospace Database</collection><collection>ProQuest Advanced Technologies & Aerospace Collection</collection><collection>Materials Science Collection</collection><collection>ProQuest One Academic Eastern Edition (DO NOT USE)</collection><collection>ProQuest One Academic</collection><collection>ProQuest One Academic UKI Edition</collection><collection>ProQuest Central China</collection><collection>DELNET Engineering & Technology Collection</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Tataroğlu, A.</au><au>Altındal, Ş.</au><au>Azizian-Kalandaragh, Y.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>31</volume><issue>14</issue><spage>11665</spage><epage>11672</epage><pages>11665-11672</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The cobalt sulfate-polyvinylpyrrolidone (CoSO
4
-PVP) solution was deposited on n-Si crystal by using spin-coated method. The electrical and photoresponse properties of Au/(CoSO
4
-PVP)/n-Si MPS diode were investigated both in the dark and under illumination (100 mW/cm
2
) level. MPS-type diode exhibits good rectifying behavior in dark condition. The measured reverse current under illumination was found to be higher than dark condition. The MPS diode has also a good response to the illumination and photosensitivity value was found as 5.25 × 10
3
for 100 mW/cm
2
. The diode parameters such as
n
,
Φ
b0
and
R
s
were extracted based on both the thermionic-emission (TE) and Norde method. The current conduction mechanisms of the MPS diode were also analyzed by forward ln(I
F
)-ln(V
F
) and reverse ln(I
R
)-V
R
1/2
plots. Moreover, both the voltage dependence of C and G characteristics were investigated under 1 MHz. The other electrical parameters such as
V
0
,
V
D
,
N
D
,
E
F
,
W
D
and
Φ
B
were extracted from the C
−2
–V characteristics. Besides, the voltage dependence profile of the N
ss
was extracted by using dark-illumination capacitance (C
dark
-C
ill
) measurements at a frequency of 1 MHz. The results suggest that the prepared Au/(CoSO
4
-PVP)/n-Si MPS diode can be used in optoelectronic device applications.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-03718-8</doi><tpages>8</tpages><orcidid>https://orcid.org/0000-0003-2074-574X</orcidid></addata></record> |
| fulltext | fulltext |
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| ispartof | Journal of materials science. Materials in electronics, 2020-07, Vol.31 (14), p.11665-11672 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_proquest_journals_2418450827 |
| source | SpringerLink Journals - AutoHoldings |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Cobalt sulfate Dependence Diodes Electric potential Illumination Interlayers Materials Science Optical and Electronic Materials Optoelectronic devices Parameters Photosensitivity Polyvinylpyrrolidone Spin coating Voltage |
| title | Electrical and photoresponse properties of CoSO4-PVP interlayer based MPS diodes |
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