An electroforming-free mechanism for Cu2O solid-electrolyte-based conductive-bridge random access memory (CBRAM)

In a CuxO solid-electrolyte-based CBRAM cell using an Ag top electrode, electroforming-free and electro-reset processes could be achieved at a specific ex situ annealing temperature of the solid electrolyte (i.e., 250 °C, cubic crystalline); however, below 200 °C (i.e., cubic crystalline), no electr...

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Veröffentlicht in:	Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-06, Vol.8 (24), p.8125-8134
Hauptverfasser:	Ki-Hyun Kwon, Dong-Won, Kim, Kim, Hea-Jee, Soo-Min, Jin, Dae-Seong Woo, Sang-Hong, Park, Park, Jea-Gun
Format:	Artikel
Sprache:	eng
Schlagworte:	Annealing Computer simulation Copper Crystal structure Crystallinity Diffusion Electroforming Electrolytes Finite element method Random access memory Silver Solid electrolytes Vacancies
Online-Zugang:	Volltext
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