The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature

Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO 2 substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH 3 gas sensing. X-ray diffraction analysis in...

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Veröffentlicht in:Journal of materials science. Materials in electronics 2020-07, Vol.31 (13), p.10084-10095
Hauptverfasser: Sarf, Fatma, Karaduman Er, Irmak, Yakar, Emin, Acar, Selim
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container_issue 13
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creator Sarf, Fatma
Karaduman Er, Irmak
Yakar, Emin
Acar, Selim
description Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO 2 substrates by chemical bath deposition. The present study detailed investigated the effect of rare-earth metal-doped ZnO on NH 3 gas sensing. X-ray diffraction analysis indicated that the incorporated rare-earth metal ions substitute Zn sites in the ZnO lattice. Dimension of ZnO films decreased with rare-earth metal doping which detected from surface morphology images. The response of 100 ppb NH 3 gas was calculated to be 0.80 (200 °C), 14.00 (90 °C), 17.00 (50 °C), and 10.00 (120 °C) for the pure, Y-, Ru-, and Cs-doped ZnO films, respectively. In addition, the response of 15 ppm NH 3 gas at room temperature was calculated to be 0.20, 27.00, 57.00, and 18.00 for undoped Y-, Ru-, and Cs-doped ZnO films, respectively.
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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Sarf, Fatma</au><au>Karaduman Er, Irmak</au><au>Yakar, Emin</au><au>Acar, Selim</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-07-01</date><risdate>2020</risdate><volume>31</volume><issue>13</issue><spage>10084</spage><epage>10095</epage><pages>10084-10095</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>Pure and rare-earth metal [Yttrium (Y), Ruthenium (Ru) and Caesium (Cs)]-doped ZnO thin films were deposited onto In-doped SnO 2 substrates by chemical bath deposition. 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subjects Ammonia
Cesium
Characterization and Evaluation of Materials
Chemistry and Materials Science
Gas sensors
Image detection
Materials Science
Mathematical analysis
Morphology
Optical and Electronic Materials
Rare earth elements
Room temperature
Ruthenium
Substrates
Thin films
Tin dioxide
Yttrium
Zinc oxide
title The role of rare-earth metal (Y, Ru and Cs)-doped ZnO thin films in NH3 gas sensing performances at room temperature
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