Temperature overshoot as the cause of physical changes in resistive switching devices during electro-formation

Resistive switching devices based on transition metal oxides require formation of a conductive filament in order for the device to be able to switch. Such filaments have been proposed to form by the reduction of oxide due to the application of the electric field, but this report seeks to rebut that...

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Veröffentlicht in:	Journal of applied physics 2020-06, Vol.127 (23)
Hauptverfasser:	Meng, Jingjia, Zhao, Bingyuan, Xu, Qiyun, Goodwill, Jonathan M., Bain, James A., Skowronski, Marek
Format:	Artikel
Sprache:	eng
Schlagworte:	Cables Circuits Crystallization Electric fields Electrodes Filaments Switching Transition metal oxides
Online-Zugang:	Volltext
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