Boron‐Doped Single‐Crystal Diamond Growth on Heteroepitaxial Diamond Substrate Using Microwave Plasma Chemical Vapor Deposition

Boron‐doped diamond layers are grown on freestanding heteroepitaxial diamond substrates by microwave plasma chemical vapor deposition (MPCVD) to verify the high potential of large‐size heteroepitaxial diamond as an ultimate semiconductor material. Due to the high crystallinity and atomically flat su...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2020-06, Vol.217 (12), p.n/a
Hauptverfasser:	Kwak, Taemyung, Lee, Jonggun, Yoo, Geunho, Shin, Heejin, Choi, Uiho, So, Byeongchan, Kim, Seongwoo, Nam, Okhyun
Format:	Artikel
Sprache:	eng
Schlagworte:	Atomic force microscopy Boron boron doping Carrier mobility Chemical vapor deposition Contact resistance Crystal growth Crystal structure Crystallinity diamond Diamonds electrical properties Flat surfaces Hall effect heteroepitaxy Microwave plasmas Room temperature Semiconductor materials Substrates Surface properties Temperature dependence
Online-Zugang:	Volltext
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