Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor

Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The...

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Veröffentlicht in:	AIP advances 2020-06, Vol.10 (6), p.065215-065215-5
Hauptverfasser:	Ochi, Ryota, Maeda, Erika, Nabatame, Toshihide, Shiozaki, Koji, Sato, Taketomo, Hashizume, Tamotsu
Format:	Artikel
Sprache:	eng
Schlagworte:	Aluminum gallium nitrides Atomic layer epitaxy Controllability Gallium nitrides Hafnium oxide High electron mobility transistors Interface stability Semiconductor devices Silicon dioxide Transconductance
Online-Zugang:	Volltext
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