Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor
Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The...
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| Veröffentlicht in: | AIP advances 2020-06, Vol.10 (6), p.065215-065215-5 |
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| creator | Ochi, Ryota Maeda, Erika Nabatame, Toshihide Shiozaki, Koji Sato, Taketomo Hashizume, Tamotsu |
| description | Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C. |
| doi_str_mv | 10.1063/5.0012687 |
| format | Article |
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The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. 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The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C.</description><subject>Aluminum gallium nitrides</subject><subject>Atomic layer epitaxy</subject><subject>Controllability</subject><subject>Gallium nitrides</subject><subject>Hafnium oxide</subject><subject>High electron mobility transistors</subject><subject>Interface stability</subject><subject>Semiconductor devices</subject><subject>Silicon dioxide</subject><subject>Transconductance</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNqdkEFLAzEQhRdRULQH_8GCJ4VtJ9kkmz2Wom2h2kP1HLLZpE1ZNzWJYv-9W7eoZweGeQwf7w2TJNcIhghYPqJDAIQZL06SC4woz3KM2ekffZ4MQthCV6REwMlF8jSVUafKtdG7ppGVbWzcp86kM7Oyy8_RuJnKp1HX6eNylW7sepPpRquObrNXd8Sjl22wITp_lZwZ2QQ9OM7L5OXh_nkyyxbL6XwyXmSK5jxmhGOuVS6LGtWmUgRJVkhghNeqREQCZqUpaIFwhSqGGBhV1NwAJiXpRAX5ZTLvfWsnt2Ln7av0e-GkFd8L59dC-mhVo0UhKaUKEUVLIJ25BIq1AlWzgpccVOd103vtvHt71yGKrXv3bXe-wAQhjCCHQ-JtTynvQvDa_KQiEIfvCyqO3-_Yu54NykYZrWv_B384_wuKXW3yL_c8j_4</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Ochi, Ryota</creator><creator>Maeda, Erika</creator><creator>Nabatame, Toshihide</creator><creator>Shiozaki, Koji</creator><creator>Sato, Taketomo</creator><creator>Hashizume, Tamotsu</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0003-0389-2414</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid></search><sort><creationdate>20200601</creationdate><title>Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor</title><author>Ochi, Ryota ; Maeda, Erika ; Nabatame, Toshihide ; Shiozaki, Koji ; Sato, Taketomo ; Hashizume, Tamotsu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c538t-4828ec3a7d1dfbc41a67a0648dc914a0269f75712b1b6160fc7d8f024947d8b03</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Aluminum gallium nitrides</topic><topic>Atomic layer epitaxy</topic><topic>Controllability</topic><topic>Gallium nitrides</topic><topic>Hafnium oxide</topic><topic>High electron mobility transistors</topic><topic>Interface stability</topic><topic>Semiconductor devices</topic><topic>Silicon dioxide</topic><topic>Transconductance</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ochi, Ryota</creatorcontrib><creatorcontrib>Maeda, Erika</creatorcontrib><creatorcontrib>Nabatame, Toshihide</creatorcontrib><creatorcontrib>Shiozaki, Koji</creatorcontrib><creatorcontrib>Sato, Taketomo</creatorcontrib><creatorcontrib>Hashizume, Tamotsu</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ochi, Ryota</au><au>Maeda, Erika</au><au>Nabatame, Toshihide</au><au>Shiozaki, Koji</au><au>Sato, Taketomo</au><au>Hashizume, Tamotsu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor</atitle><jtitle>AIP advances</jtitle><date>2020-06-01</date><risdate>2020</risdate><volume>10</volume><issue>6</issue><spage>065215</spage><epage>065215-5</epage><pages>065215-065215-5</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>Hafnium silicate (HfSiOx) has been applied to AlGaN/GaN high-electron-mobility transistors (HEMTs) as a high κ gate dielectric. The (HfO2)/(SiO2) laminate structure was deposited on the AlGaN surface by a plasma-enhanced atomic layer deposition, followed by a post-deposition annealing at 800 °C. The HfSiOx-gate HEMT showed good transfer characteristics with a high transconductance expected from its κ value and a subthreshold swing of 71 mV/decade. For the metal–oxide-semiconductor (MOS) HEMT diode, we observed excellent capacitance–voltage (C–V) characteristics with negligible frequency dispersion. The detailed C–V analysis showed low state densities on the order of 1011 cm−2 eV−1 at the HfSiOx/AlGaN interface. In addition, excellent operation stability of the MOS HEMT was observed at high temperatures up to 150 °C.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0012687</doi><tpages>5</tpages><orcidid>https://orcid.org/0000-0003-0389-2414</orcidid><orcidid>https://orcid.org/0000-0001-5032-6947</orcidid><oa>free_for_read</oa></addata></record> |
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| subjects | Aluminum gallium nitrides Atomic layer epitaxy Controllability Gallium nitrides Hafnium oxide High electron mobility transistors Interface stability Semiconductor devices Silicon dioxide Transconductance |
| title | Gate controllability of HfSiOx/AlGaN/GaN MOS high-electron-mobility transistor |
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