Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge
In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave rem...
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Veröffentlicht in: | AIP advances 2020-06, Vol.10 (6), p.065015-065015-4 |
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description | In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources. |
doi_str_mv | 10.1063/5.0009883 |
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Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources.</description><identifier>ISSN: 2158-3226</identifier><identifier>EISSN: 2158-3226</identifier><identifier>DOI: 10.1063/5.0009883</identifier><identifier>CODEN: AAIDBI</identifier><language>eng</language><publisher>Melville: American Institute of Physics</publisher><subject>Avalanche diodes ; Bias ; Diamonds ; Helium ; High voltages</subject><ispartof>AIP advances, 2020-06, Vol.10 (6), p.065015-065015-4</ispartof><rights>Author(s)</rights><rights>2020 Author(s). 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Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources.</description><subject>Avalanche diodes</subject><subject>Bias</subject><subject>Diamonds</subject><subject>Helium</subject><subject>High voltages</subject><issn>2158-3226</issn><issn>2158-3226</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>DOA</sourceid><recordid>eNp9kU1LxDAQhosoKOrBfxDwpNB1kjZt9ih-g-BlwWOY5qObZU3WJLviv7drRQXB0wzDw_MOM0VxQmFCoaku-AQApkJUO8UBo1yUFWPN7q9-vzhOaTFAUE8piPqgeL52-BK8JrjBJXo1N0S7oE0iNkQSuozOO9-Tuevn5SYsM_aGrNbLZMiby3OS1p1HH5JRW4mNwWdidG-Oij2LA3X8VQ-L2e3N7Oq-fHy6e7i6fCxVzUQuWWtVY0C0Xc1brlnHLFbQKM2E4MJqDk0DU-hMJxrVihpbYAYaa1oKnNPqsHgYtTrgQq6ie8H4LgM6-TkIsZcYs1NLIwUaRQcjVaytO6pQqY7ralozxYFVbHCdjq5VDK9rk7JchHX0w_aS1ZSy4bLtNvFspFQMKUVjv1MpyO0XJJdfXxjY85FNymXMLvhveBPiDyhX2v4H_zV_AKUplJw</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Liu, Zhangcheng</creator><creator>Yi, Wenyang</creator><creator>Zhao, Dan</creator><creator>Abbasi, Haris Naeem</creator><creator>Min, Tai</creator><creator>Wang, Hong-Xing</creator><general>American Institute of Physics</general><general>AIP Publishing LLC</general><scope>AJDQP</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>8FD</scope><scope>H8D</scope><scope>L7M</scope><scope>DOA</scope><orcidid>https://orcid.org/0000-0002-3961-1306</orcidid><orcidid>https://orcid.org/0000-0002-2883-0765</orcidid></search><sort><creationdate>20200601</creationdate><title>Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge</title><author>Liu, Zhangcheng ; Yi, Wenyang ; Zhao, Dan ; Abbasi, Haris Naeem ; Min, Tai ; Wang, Hong-Xing</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c428t-27fc6e087b4575d2b2fa306cd28858fd5066090beb86c784a702e06fe7105513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Avalanche diodes</topic><topic>Bias</topic><topic>Diamonds</topic><topic>Helium</topic><topic>High voltages</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Liu, Zhangcheng</creatorcontrib><creatorcontrib>Yi, Wenyang</creatorcontrib><creatorcontrib>Zhao, Dan</creatorcontrib><creatorcontrib>Abbasi, Haris Naeem</creatorcontrib><creatorcontrib>Min, Tai</creatorcontrib><creatorcontrib>Wang, Hong-Xing</creatorcontrib><collection>AIP Open Access Journals</collection><collection>CrossRef</collection><collection>Technology Research Database</collection><collection>Aerospace Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>DOAJ Directory of Open Access Journals</collection><jtitle>AIP advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Liu, Zhangcheng</au><au>Yi, Wenyang</au><au>Zhao, Dan</au><au>Abbasi, Haris Naeem</au><au>Min, Tai</au><au>Wang, Hong-Xing</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge</atitle><jtitle>AIP advances</jtitle><date>2020-06-01</date><risdate>2020</risdate><volume>10</volume><issue>6</issue><spage>065015</spage><epage>065015-4</epage><pages>065015-065015-4</pages><issn>2158-3226</issn><eissn>2158-3226</eissn><coden>AAIDBI</coden><abstract>In this Letter, we report on demonstrating diamond avalanche diodes for obtaining a high-voltage pulse with a subnanosecond front edge. Under a 2.5 kV driving pulse, the diamond avalanche diodes show a 2.04 kV output and the front edge is 0.894 ns. After repetitive tests, the output voltage wave remains almost the same, indicating good stability. By applying a reverse DC 100 V bias, the front edge shortens to be 0.675 ns, while the rectifier characteristics degrade and the output voltage is limited. Therefore, the reverse bias should be optimized to obtain both the fast front edge and high output voltage. The results show that diamond avalanche diodes have a promising application for high-voltage pulse sources.</abstract><cop>Melville</cop><pub>American Institute of Physics</pub><doi>10.1063/5.0009883</doi><tpages>4</tpages><orcidid>https://orcid.org/0000-0002-3961-1306</orcidid><orcidid>https://orcid.org/0000-0002-2883-0765</orcidid><oa>free_for_read</oa></addata></record> |
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subjects | Avalanche diodes Bias Diamonds Helium High voltages |
title | Diamond avalanche diodes for obtaining high-voltage pulse with subnanosecond front edge |
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