InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency

We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentra...

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Veröffentlicht in:	Optical and quantum electronics 2020-06, Vol.52 (6), Article 299
Hauptverfasser:	Zhou, Min, Wang, Wenjuan, Qu, Huidan, Han, Hao, Zhu, Yicheng, Guo, Zilu, Gui, Lu, Wang, Xianying, Lu, Wei
Format:	Artikel
Sprache:	eng
Schlagworte:	Avalanche diodes Carrier density Characterization and Evaluation of Materials Computer Communication Networks Electric fields Electrical Engineering Gallium indium arsenide phosphide Heterostructures Indium phosphides Lasers Multiplication Optical Devices Optics Photon avalanches Photonics Photons Physics Physics and Astronomy
Online-Zugang:	Volltext
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