InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency
We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentra...
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| Veröffentlicht in: | Optical and quantum electronics 2020-06, Vol.52 (6), Article 299 |
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| container_title | Optical and quantum electronics |
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| creator | Zhou, Min Wang, Wenjuan Qu, Huidan Han, Hao Zhu, Yicheng Guo, Zilu Gui, Lu Wang, Xianying Lu, Wei |
| description | We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%. |
| doi_str_mv | 10.1007/s11082-020-02422-5 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_journals_2407604598</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>2407604598</sourcerecordid><originalsourceid>FETCH-LOGICAL-c319t-55eccb28b38814a4894aef85935a019f6a7b8de5a0c29fa68b9a637acb55e5bc3</originalsourceid><addsrcrecordid>eNp9kE1LAzEQhoMoWD_-gKcFz7GT7GY3OZaitVCwBxVvIZvNdlPWbE1Spf_e6CrePAwzA88zAy9CVwRuCEA1DYQApxgopCooxewITQirKOakejlGE8ihxFwQcYrOQtgCQFkwmKDnpVuoWVhPl26dBes2vcl23RAHl6l31SunO5M1dmhMyD5s7LJ9H73Cnd10v1xjotHRpsm0rdXWOH24QCet6oO5_Onn6Onu9nF-j1cPi-V8tsI6JyJixozWNeV1zjkpVMFFoUzLmciZAiLaUlU1b0xaNBWtKnktVJlXStfJZLXOz9H1eHfnh7e9CVFuh7136aWkBVQlFEzwRNGR0n4IwZtW7rx9Vf4gCciv_OSYn0z5ye_8JEtSPkohwW5j_N_pf6xPc_Vzmw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2407604598</pqid></control><display><type>article</type><title>InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency</title><source>SpringerLink Journals - AutoHoldings</source><creator>Zhou, Min ; Wang, Wenjuan ; Qu, Huidan ; Han, Hao ; Zhu, Yicheng ; Guo, Zilu ; Gui, Lu ; Wang, Xianying ; Lu, Wei</creator><creatorcontrib>Zhou, Min ; Wang, Wenjuan ; Qu, Huidan ; Han, Hao ; Zhu, Yicheng ; Guo, Zilu ; Gui, Lu ; Wang, Xianying ; Lu, Wei</creatorcontrib><description>We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%.</description><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-020-02422-5</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Avalanche diodes ; Carrier density ; Characterization and Evaluation of Materials ; Computer Communication Networks ; Electric fields ; Electrical Engineering ; Gallium indium arsenide phosphide ; Heterostructures ; Indium phosphides ; Lasers ; Multiplication ; Optical Devices ; Optics ; Photon avalanches ; Photonics ; Photons ; Physics ; Physics and Astronomy</subject><ispartof>Optical and quantum electronics, 2020-06, Vol.52 (6), Article 299</ispartof><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020</rights><rights>Springer Science+Business Media, LLC, part of Springer Nature 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c319t-55eccb28b38814a4894aef85935a019f6a7b8de5a0c29fa68b9a637acb55e5bc3</citedby><cites>FETCH-LOGICAL-c319t-55eccb28b38814a4894aef85935a019f6a7b8de5a0c29fa68b9a637acb55e5bc3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1007/s11082-020-02422-5$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1007/s11082-020-02422-5$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,41488,42557,51319</link.rule.ids></links><search><creatorcontrib>Zhou, Min</creatorcontrib><creatorcontrib>Wang, Wenjuan</creatorcontrib><creatorcontrib>Qu, Huidan</creatorcontrib><creatorcontrib>Han, Hao</creatorcontrib><creatorcontrib>Zhu, Yicheng</creatorcontrib><creatorcontrib>Guo, Zilu</creatorcontrib><creatorcontrib>Gui, Lu</creatorcontrib><creatorcontrib>Wang, Xianying</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><title>InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><description>We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%.</description><subject>Avalanche diodes</subject><subject>Carrier density</subject><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Electric fields</subject><subject>Electrical Engineering</subject><subject>Gallium indium arsenide phosphide</subject><subject>Heterostructures</subject><subject>Indium phosphides</subject><subject>Lasers</subject><subject>Multiplication</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photon avalanches</subject><subject>Photonics</subject><subject>Photons</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp9kE1LAzEQhoMoWD_-gKcFz7GT7GY3OZaitVCwBxVvIZvNdlPWbE1Spf_e6CrePAwzA88zAy9CVwRuCEA1DYQApxgopCooxewITQirKOakejlGE8ihxFwQcYrOQtgCQFkwmKDnpVuoWVhPl26dBes2vcl23RAHl6l31SunO5M1dmhMyD5s7LJ9H73Cnd10v1xjotHRpsm0rdXWOH24QCet6oO5_Onn6Onu9nF-j1cPi-V8tsI6JyJixozWNeV1zjkpVMFFoUzLmciZAiLaUlU1b0xaNBWtKnktVJlXStfJZLXOz9H1eHfnh7e9CVFuh7136aWkBVQlFEzwRNGR0n4IwZtW7rx9Vf4gCciv_OSYn0z5ye_8JEtSPkohwW5j_N_pf6xPc_Vzmw</recordid><startdate>20200601</startdate><enddate>20200601</enddate><creator>Zhou, Min</creator><creator>Wang, Wenjuan</creator><creator>Qu, Huidan</creator><creator>Han, Hao</creator><creator>Zhu, Yicheng</creator><creator>Guo, Zilu</creator><creator>Gui, Lu</creator><creator>Wang, Xianying</creator><creator>Lu, Wei</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200601</creationdate><title>InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency</title><author>Zhou, Min ; Wang, Wenjuan ; Qu, Huidan ; Han, Hao ; Zhu, Yicheng ; Guo, Zilu ; Gui, Lu ; Wang, Xianying ; Lu, Wei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c319t-55eccb28b38814a4894aef85935a019f6a7b8de5a0c29fa68b9a637acb55e5bc3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Avalanche diodes</topic><topic>Carrier density</topic><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Electric fields</topic><topic>Electrical Engineering</topic><topic>Gallium indium arsenide phosphide</topic><topic>Heterostructures</topic><topic>Indium phosphides</topic><topic>Lasers</topic><topic>Multiplication</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photon avalanches</topic><topic>Photonics</topic><topic>Photons</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Min</creatorcontrib><creatorcontrib>Wang, Wenjuan</creatorcontrib><creatorcontrib>Qu, Huidan</creatorcontrib><creatorcontrib>Han, Hao</creatorcontrib><creatorcontrib>Zhu, Yicheng</creatorcontrib><creatorcontrib>Guo, Zilu</creatorcontrib><creatorcontrib>Gui, Lu</creatorcontrib><creatorcontrib>Wang, Xianying</creatorcontrib><creatorcontrib>Lu, Wei</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Min</au><au>Wang, Wenjuan</au><au>Qu, Huidan</au><au>Han, Hao</au><au>Zhu, Yicheng</au><au>Guo, Zilu</au><au>Gui, Lu</au><au>Wang, Xianying</au><au>Lu, Wei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2020-06-01</date><risdate>2020</risdate><volume>52</volume><issue>6</issue><artnum>299</artnum><issn>0306-8919</issn><eissn>1572-817X</eissn><abstract>We describe a planar front-illuminated InGaAsP/InP single-photon avalanche diode that is made in a separate absorption, grading, charge and multiplication heterostructure. By controlling the electric field in the center and periphery of the active area, the photoexcited carriers are mainly concentrated in the active area, especially in the center. Deep level defects are not obviously observed, and the dominated generation recommendation current and the trap assisted tunneling current are greatly suppressed. When operated in gated-mode, a photon detection efficiency (PDE) of 70% is achieved, with the DCR of 48 kHz at 226 K. And the afterpulse probability remains below 2.2% for PDEs up to 62.7%.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s11082-020-02422-5</doi></addata></record> |
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| subjects | Avalanche diodes Carrier density Characterization and Evaluation of Materials Computer Communication Networks Electric fields Electrical Engineering Gallium indium arsenide phosphide Heterostructures Indium phosphides Lasers Multiplication Optical Devices Optics Photon avalanches Photonics Photons Physics Physics and Astronomy |
| title | InGaAsP/InP single photon avalanche diodes with ultra-high photon detection efficiency |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T00%3A32%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=InGaAsP/InP%20single%20photon%20avalanche%20diodes%20with%20ultra-high%20photon%20detection%20efficiency&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Zhou,%20Min&rft.date=2020-06-01&rft.volume=52&rft.issue=6&rft.artnum=299&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-020-02422-5&rft_dat=%3Cproquest_cross%3E2407604598%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2407604598&rft_id=info:pmid/&rfr_iscdi=true |