Enhancement of the thermoelectric power factor by tuning the carrier concentration in Cu-rich and Ge-poor colusites Cu26+xNb2Ge6-xS32

Enhancement of the thermoelectric power factor by tuning the carrier concentration in Cu-rich and Ge-poor colusites Cu26+xNb2Ge6-xS32

Non-stoichiometric colusites Cu26+xNb2Ge6-xS32 (0

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Bibliographische Detailangaben
Veröffentlicht in:Journal of materials chemistry. C, Materials for optical and electronic devices Materials for optical and electronic devices, 2020-01, Vol.8 (19), p.6442-6449
Hauptverfasser: Bouyrie, Yohan, Chetty, Raju, Suekuni, Koichiro, Saitou, Noriyuki, Jood, Priyanka, Yoshizawa, Noriko, Takabatake, Toshiro, Ohta, Michihiro
Format: Artikel
Sprache:eng
Schlagworte:
Carrier density
Cations
Chemical composition
Copper
Crystal defects
Crystallization
High temperature
Lorenz number
Materials Science
Materials Science, Multidisciplinary
Niobium
Physical Sciences
Physics
Physics, Applied
Power factor
Scanning electron microscopy
Science & Technology
Sintering (powder metallurgy)
Sulfur
Technology
Thermal conductivity
Thermal diffusivity
Thermoelectricity
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Beschreibung
Zusammenfassung:Non-stoichiometric colusites Cu26+xNb2Ge6-xS32 (0
ISSN:2050-7526
2050-7534
DOI:10.1039/d0tc00508h