Surface recombination velocities for 4H-SiC: Temperature dependence and difference in conductivity type at several crystal faces

In bipolar SiC devices, which are promising under ultra-high voltage operation, the carrier lifetime is a highly influential parameter for the device performance. Surface recombination is one of the limiting factors for the carrier lifetime, and quantitative values of the surface recombination veloc...

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Veröffentlicht in:	Journal of applied physics 2020-05, Vol.127 (19)
Hauptverfasser:	Kato, Masashi, Xinchi, Zhang, Kohama, Kimihiro, Fukaya, Shuhei, Ichimura, Masaya
Format:	Artikel
Sprache:	eng
Schlagworte:	Applied physics Carrier lifetime Carrier recombination Chemical-mechanical polishing Ion recombination Photoconductivity Photoconductivity decay method Reactive ion etching Room temperature Silicon carbide Temperature Temperature dependence Velocity
Online-Zugang:	Volltext
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