Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters
The current–voltage characteristics of In x Ga 1 – x As/GaAs metamorphic photovoltaic converters with built-in n -InGaAs/InAlAs Bragg reflectors are studied at an indium content of x = 0 . 025–0 . 24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-04, Vol.54 (4), p.476-483 |
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| container_title | Semiconductors (Woodbury, N.Y.) |
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| creator | Emelyanov, V. M. Kalyuzhnyy, N. A. Mintairov, S. A. Nakhimovich, M. V. Salii, R. A. Shvarts, M. Z. |
| description | The current–voltage characteristics of In
x
Ga
1 –
x
As/GaAs metamorphic photovoltaic converters with built-in
n
-InGaAs/InAlAs Bragg reflectors are studied at an indium content of
x
= 0
.
025–0
.
24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–
n
:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0
.
32–0
.
36 eV and a substantial width. To suppress this effect, the technology of the Te doping of
n
-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm
2
. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed. |
| doi_str_mv | 10.1134/S1063782620040053 |
| format | Article |
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x
Ga
1 –
x
As/GaAs metamorphic photovoltaic converters with built-in
n
-InGaAs/InAlAs Bragg reflectors are studied at an indium content of
x
= 0
.
025–0
.
24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–
n
:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0
.
32–0
.
36 eV and a substantial width. To suppress this effect, the technology of the Te doping of
n
-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm
2
. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620040053</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Analysis ; Bragg reflectors ; Converters ; Current voltage characteristics ; Doping ; Electric current converters ; Electric properties ; Gallium arsenide ; Heterostructures ; Impurities ; Indium ; Indium aluminum arsenides ; Indium gallium arsenides ; Ionizing radiation ; Magnetic Materials ; Magnetism ; Majority carriers ; Photovoltaic cells ; Physics ; Physics and Astronomy ; Physics of Semiconductor Devices ; Quantum efficiency ; Silicon ; Solar energy industry ; Tellurium</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.476-483</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-1e7bf1c054361ea251e98cbee191234c85d284a4b7c596064cda7dce7c4909b53</citedby><cites>FETCH-LOGICAL-c355t-1e7bf1c054361ea251e98cbee191234c85d284a4b7c596064cda7dce7c4909b53</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620040053$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620040053$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Emelyanov, V. M.</creatorcontrib><creatorcontrib>Kalyuzhnyy, N. A.</creatorcontrib><creatorcontrib>Mintairov, S. A.</creatorcontrib><creatorcontrib>Nakhimovich, M. V.</creatorcontrib><creatorcontrib>Salii, R. A.</creatorcontrib><creatorcontrib>Shvarts, M. Z.</creatorcontrib><title>Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The current–voltage characteristics of In
x
Ga
1 –
x
As/GaAs metamorphic photovoltaic converters with built-in
n
-InGaAs/InAlAs Bragg reflectors are studied at an indium content of
x
= 0
.
025–0
.
24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–
n
:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0
.
32–0
.
36 eV and a substantial width. To suppress this effect, the technology of the Te doping of
n
-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm
2
. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.</description><subject>Analysis</subject><subject>Bragg reflectors</subject><subject>Converters</subject><subject>Current voltage characteristics</subject><subject>Doping</subject><subject>Electric current converters</subject><subject>Electric properties</subject><subject>Gallium arsenide</subject><subject>Heterostructures</subject><subject>Impurities</subject><subject>Indium</subject><subject>Indium aluminum arsenides</subject><subject>Indium gallium arsenides</subject><subject>Ionizing radiation</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Majority carriers</subject><subject>Photovoltaic cells</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Physics of Semiconductor Devices</subject><subject>Quantum efficiency</subject><subject>Silicon</subject><subject>Solar energy industry</subject><subject>Tellurium</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kU1rGzEQhpeSQpO0P6A3Qc6bjL5XR8dx04BLS5ucF1kerRXWK1dSArn1p1dbF3ooQTCaj_eZkZim-UjhklIurn5QUFx3TDEAASD5m-aUgoFWCW1OZl_xdq6_a85yfgSgtJPitPm18h5dySR6chMPYRpm7zrZYSDf0Y-1FhNZ2xdMVTORskOymrMpODuS5c4m6wqmkEtwf7rcTbd2ka9mQ75gsfuYDrvgyLddLPE5jsXWYBmnZ0yVy--bt96OGT_8vc-bh0-r--Xndv319m65WLeOS1lainrjqQMpuKJomaRoOrdBpIYyLlwnt6wTVmy0k0aBEm5r9dahdsKA2Uh-3lwc-x5S_PmEufSP8SlNdWTPuJFaGwBdVZdH1WBH7MPkY6n_q2eL--DihD7U_EIxxoFLBRWgR8ClmHNC3x9S2Nv00lPo5830_22mMuzI5KqdBkz_nvI69Bs6T4_g</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Emelyanov, V. M.</creator><creator>Kalyuzhnyy, N. A.</creator><creator>Mintairov, S. A.</creator><creator>Nakhimovich, M. V.</creator><creator>Salii, R. A.</creator><creator>Shvarts, M. Z.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200401</creationdate><title>Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters</title><author>Emelyanov, V. M. ; Kalyuzhnyy, N. A. ; Mintairov, S. A. ; Nakhimovich, M. V. ; Salii, R. A. ; Shvarts, M. Z.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-1e7bf1c054361ea251e98cbee191234c85d284a4b7c596064cda7dce7c4909b53</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Analysis</topic><topic>Bragg reflectors</topic><topic>Converters</topic><topic>Current voltage characteristics</topic><topic>Doping</topic><topic>Electric current converters</topic><topic>Electric properties</topic><topic>Gallium arsenide</topic><topic>Heterostructures</topic><topic>Impurities</topic><topic>Indium</topic><topic>Indium aluminum arsenides</topic><topic>Indium gallium arsenides</topic><topic>Ionizing radiation</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Majority carriers</topic><topic>Photovoltaic cells</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Physics of Semiconductor Devices</topic><topic>Quantum efficiency</topic><topic>Silicon</topic><topic>Solar energy industry</topic><topic>Tellurium</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Emelyanov, V. M.</creatorcontrib><creatorcontrib>Kalyuzhnyy, N. A.</creatorcontrib><creatorcontrib>Mintairov, S. A.</creatorcontrib><creatorcontrib>Nakhimovich, M. V.</creatorcontrib><creatorcontrib>Salii, R. A.</creatorcontrib><creatorcontrib>Shvarts, M. Z.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Emelyanov, V. M.</au><au>Kalyuzhnyy, N. A.</au><au>Mintairov, S. A.</au><au>Nakhimovich, M. V.</au><au>Salii, R. A.</au><au>Shvarts, M. Z.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>54</volume><issue>4</issue><spage>476</spage><epage>483</epage><pages>476-483</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>The current–voltage characteristics of In
x
Ga
1 –
x
As/GaAs metamorphic photovoltaic converters with built-in
n
-InGaAs/InAlAs Bragg reflectors are studied at an indium content of
x
= 0
.
025–0
.
24. The series resistance of the heterostructures is measured in the temperature range from 90 to 400 K. It is found that a sharp rise in the resistance of silicon-doped reflectors with an increasing fraction of In is due to weak activation of the donor impurity in InAlAs–
n
:Si layers. As a result, the energy barriers for majority carriers are formed in the latter, with a height of 0
.
32–0
.
36 eV and a substantial width. To suppress this effect, the technology of the Te doping of
n
-InGaAs/InAlAs Bragg reflectors is developed, which reduces the series resistance by five orders of magnitude. This makes it possible to keep the fill factor of the current–voltage characteristic above 80% up to current densities of 2 A/cm
2
. Values exceeding 85%, achieved for the quantum efficiency, indicate that the “memory” and tellurium segregation effects characteristic of this kind of impurity are suppressed.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620040053</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.476-483 |
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| subjects | Analysis Bragg reflectors Converters Current voltage characteristics Doping Electric current converters Electric properties Gallium arsenide Heterostructures Impurities Indium Indium aluminum arsenides Indium gallium arsenides Ionizing radiation Magnetic Materials Magnetism Majority carriers Photovoltaic cells Physics Physics and Astronomy Physics of Semiconductor Devices Quantum efficiency Silicon Solar energy industry Tellurium |
| title | Effects of Doping of Bragg Reflector Layers on the Electrical Characteristics of InGaAs/GaAs Metamorphic Photovoltaic Converters |
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