Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures
Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon ( por -Si) transition layer on the optical properties of GaN layers grown on SiC/ por -Si/ c -Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studie...
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| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-04, Vol.54 (4), p.417-425 |
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| creator | Seredin, P. V. Goloshchapov, D. L. Zolotukhin, D. S. Lenshin, A. S. Mizerov, A. M. Timoshnev, S. N. Nikitina, E. V. Arsentiev, I. N. Kukushkin, S. A. |
| description | Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (
por
-Si) transition layer on the optical properties of GaN layers grown on SiC/
por
-Si/
c
-Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studied. It is shown for the first time that the MBE PA technology of the synthesis of GaN on a virtual SiC/
por
-Si/
c
-Si substrate provides a means for producing a GaN film of much higher structural and optical quality at a much lower growth temperature compared to those in similar studies, in which growth on porous Si substrates is demonstrated. The use of a
por
-Si layer makes it possible to improve the structural and morphological properties of the GaN epitaxial layer and to attain unique optical and electrical characteristics of the layer. The data obtained in the study will serve as an important basis for understanding the foundations of the physics of GaN/SiC/
por
-Si nanoheterostructures and for promoting their potential use in optoelectronics. |
| doi_str_mv | 10.1134/S1063782620040168 |
| format | Article |
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por
-Si) transition layer on the optical properties of GaN layers grown on SiC/
por
-Si/
c
-Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studied. It is shown for the first time that the MBE PA technology of the synthesis of GaN on a virtual SiC/
por
-Si/
c
-Si substrate provides a means for producing a GaN film of much higher structural and optical quality at a much lower growth temperature compared to those in similar studies, in which growth on porous Si substrates is demonstrated. The use of a
por
-Si layer makes it possible to improve the structural and morphological properties of the GaN epitaxial layer and to attain unique optical and electrical characteristics of the layer. The data obtained in the study will serve as an important basis for understanding the foundations of the physics of GaN/SiC/
por
-Si nanoheterostructures and for promoting their potential use in optoelectronics.</description><identifier>ISSN: 1063-7826</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620040168</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Comparative analysis ; Epitaxial growth ; Epitaxy ; Gallium nitrides ; Heterostructures ; Interaction with Radiation ; Liquors ; Magnetic Materials ; Magnetism ; Molecular beam epitaxy ; Optical properties ; Optoelectronics ; Physics ; Physics and Astronomy ; Plasma (physics) ; Silicon ; Silicon carbide ; Silicon substrates ; Spectroscopy ; Transition layers</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-04, Vol.54 (4), p.417-425</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c355t-351c6fa97f602b8b83d6b3a0461b56bbf8ac6c454514de94fa265e31fa92a96f3</citedby><cites>FETCH-LOGICAL-c355t-351c6fa97f602b8b83d6b3a0461b56bbf8ac6c454514de94fa265e31fa92a96f3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620040168$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620040168$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27901,27902,41464,42533,51294</link.rule.ids></links><search><creatorcontrib>Seredin, P. V.</creatorcontrib><creatorcontrib>Goloshchapov, D. L.</creatorcontrib><creatorcontrib>Zolotukhin, D. S.</creatorcontrib><creatorcontrib>Lenshin, A. S.</creatorcontrib><creatorcontrib>Mizerov, A. M.</creatorcontrib><creatorcontrib>Timoshnev, S. N.</creatorcontrib><creatorcontrib>Nikitina, E. V.</creatorcontrib><creatorcontrib>Arsentiev, I. N.</creatorcontrib><creatorcontrib>Kukushkin, S. A.</creatorcontrib><title>Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (
por
-Si) transition layer on the optical properties of GaN layers grown on SiC/
por
-Si/
c
-Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studied. It is shown for the first time that the MBE PA technology of the synthesis of GaN on a virtual SiC/
por
-Si/
c
-Si substrate provides a means for producing a GaN film of much higher structural and optical quality at a much lower growth temperature compared to those in similar studies, in which growth on porous Si substrates is demonstrated. The use of a
por
-Si layer makes it possible to improve the structural and morphological properties of the GaN epitaxial layer and to attain unique optical and electrical characteristics of the layer. The data obtained in the study will serve as an important basis for understanding the foundations of the physics of GaN/SiC/
por
-Si nanoheterostructures and for promoting their potential use in optoelectronics.</description><subject>Comparative analysis</subject><subject>Epitaxial growth</subject><subject>Epitaxy</subject><subject>Gallium nitrides</subject><subject>Heterostructures</subject><subject>Interaction with Radiation</subject><subject>Liquors</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Molecular beam epitaxy</subject><subject>Optical properties</subject><subject>Optoelectronics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Plasma (physics)</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Silicon substrates</subject><subject>Spectroscopy</subject><subject>Transition layers</subject><issn>1063-7826</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWKs_wNuCFz1sm8nX7h6laisUK1TPSzablJR2sybpof_elBU8iMxhhpn3mS-EbgFPACibrgELWpREEIwZBlGeoRHgCueCFdX5KRY0P9Uv0VUIW4wBSs5G6GnVR6vkLnv3rtc-Wh0yZ7K5fJuu7WzaO5-vbQrvAeAhWxwbb9tsoaP2LkR_UPHgdbhGF0bugr758WP0-fL8MVvky9X8dfa4zBXlPOaUgxJGVoURmDRlU9JWNFRiJqDhomlMKZVQjDMOrNUVM5IIrikkhMhKGDpGd0Pf3ruvgw6x3rqD79LImtCKFwWrgCfVZFBt5E7XtjMueqmStXpvleu0sSn_KAihmPKCJgAGQKWjgtem7r3dS3-sAden79Z_vpsYMjAhabuN9r-r_A99A1CteP8</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Seredin, P. V.</creator><creator>Goloshchapov, D. L.</creator><creator>Zolotukhin, D. S.</creator><creator>Lenshin, A. S.</creator><creator>Mizerov, A. M.</creator><creator>Timoshnev, S. N.</creator><creator>Nikitina, E. V.</creator><creator>Arsentiev, I. N.</creator><creator>Kukushkin, S. A.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200401</creationdate><title>Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures</title><author>Seredin, P. V. ; Goloshchapov, D. L. ; Zolotukhin, D. S. ; Lenshin, A. S. ; Mizerov, A. M. ; Timoshnev, S. N. ; Nikitina, E. V. ; Arsentiev, I. N. ; Kukushkin, S. A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c355t-351c6fa97f602b8b83d6b3a0461b56bbf8ac6c454514de94fa265e31fa92a96f3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Comparative analysis</topic><topic>Epitaxial growth</topic><topic>Epitaxy</topic><topic>Gallium nitrides</topic><topic>Heterostructures</topic><topic>Interaction with Radiation</topic><topic>Liquors</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Molecular beam epitaxy</topic><topic>Optical properties</topic><topic>Optoelectronics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Plasma (physics)</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Silicon substrates</topic><topic>Spectroscopy</topic><topic>Transition layers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Seredin, P. V.</creatorcontrib><creatorcontrib>Goloshchapov, D. L.</creatorcontrib><creatorcontrib>Zolotukhin, D. S.</creatorcontrib><creatorcontrib>Lenshin, A. S.</creatorcontrib><creatorcontrib>Mizerov, A. M.</creatorcontrib><creatorcontrib>Timoshnev, S. N.</creatorcontrib><creatorcontrib>Nikitina, E. V.</creatorcontrib><creatorcontrib>Arsentiev, I. N.</creatorcontrib><creatorcontrib>Kukushkin, S. A.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Seredin, P. V.</au><au>Goloshchapov, D. L.</au><au>Zolotukhin, D. S.</au><au>Lenshin, A. S.</au><au>Mizerov, A. M.</au><au>Timoshnev, S. N.</au><au>Nikitina, E. V.</au><au>Arsentiev, I. N.</au><au>Kukushkin, S. A.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>54</volume><issue>4</issue><spage>417</spage><epage>425</epage><pages>417-425</pages><issn>1063-7826</issn><eissn>1090-6479</eissn><abstract>Using a complex of structural and spectroscopic methods of diagnostics, the influence of a nanoporous-silicon (
por
-Si) transition layer on the optical properties of GaN layers grown on SiC/
por
-Si/
c
-Si templates by molecular-beam epitaxy with the plasma activation (MBE PA) of nitrogen is studied. It is shown for the first time that the MBE PA technology of the synthesis of GaN on a virtual SiC/
por
-Si/
c
-Si substrate provides a means for producing a GaN film of much higher structural and optical quality at a much lower growth temperature compared to those in similar studies, in which growth on porous Si substrates is demonstrated. The use of a
por
-Si layer makes it possible to improve the structural and morphological properties of the GaN epitaxial layer and to attain unique optical and electrical characteristics of the layer. The data obtained in the study will serve as an important basis for understanding the foundations of the physics of GaN/SiC/
por
-Si nanoheterostructures and for promoting their potential use in optoelectronics.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620040168</doi><tpages>9</tpages></addata></record> |
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| subjects | Comparative analysis Epitaxial growth Epitaxy Gallium nitrides Heterostructures Interaction with Radiation Liquors Magnetic Materials Magnetism Molecular beam epitaxy Optical properties Optoelectronics Physics Physics and Astronomy Plasma (physics) Silicon Silicon carbide Silicon substrates Spectroscopy Transition layers |
| title | Optical Properties of GaN/SiC/por-Si/Si(111) Hybrid Heterostructures |
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