On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates
The peculiarities of obtaining p -Bi 0.5 Sb 1.5 Te 3 and n -Bi 2 Te 2.7 Se 0.3 thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate dista...
Gespeichert in:
| Veröffentlicht in: | Semiconductors (Woodbury, N.Y.) N.Y.), 2020-03, Vol.54 (3), p.378-382, Article 378 |
|---|---|
| Hauptverfasser: | , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 382 |
|---|---|
| container_issue | 3 |
| container_start_page | 378 |
| container_title | Semiconductors (Woodbury, N.Y.) |
| container_volume | 54 |
| creator | Shupenev, A. E. Korshunov, I. S. Grigoryants, A. G. |
| description | The peculiarities of obtaining
p
-Bi
0.5
Sb
1.5
Te
3
and
n
-Bi
2
Te
2.7
Se
0.3
thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric
p
- and
n
-type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K
2
) respectively due to the relatively high electrical resistances of the films. |
| doi_str_mv | 10.1134/S1063782620030173 |
| format | Article |
| fullrecord | <record><control><sourceid>gale_proqu</sourceid><recordid>TN_cdi_proquest_journals_2395310715</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><galeid>A622187668</galeid><sourcerecordid>A622187668</sourcerecordid><originalsourceid>FETCH-LOGICAL-c403t-629d249d19f661e12bf87ecb76c962176fc7b0937a5528bb8e1ba80fedbba433</originalsourceid><addsrcrecordid>eNp1kFtLxDAQhYsoeP0BvhV87ppJ2qR99LYqLKxg8bUk7cSNtM2atA_7702pKHhhHjJMzjcnOVF0DmQBwNLLZyCciZxySggjINhedASkIAlPRbE_9Zwl0_1hdOz9GyEAeZYeRS_rPh42GD-NrccmWUmPLr7FrfVmMLaPrY6vje_GYZOU2LajMw3G5cb08dK0nY-D5Mm2O9NN8-dR-cHJAf1pdKBl2Hj2eZ5E5fKuvHlIVuv7x5urVVKnhA0Jp0VD06KBQnMOCFTpXGCtBK8LTkFwXQtFCiZkltFcqRxByZxobJSSKWMn0cW8duvs-4h-qN7s6PrgWFFWZAyIgCyoFrPqVbZYmV7b8Mg6VIOdqW2P2oT5FacUcsF5HgCYgdpZ7x3qautMJ92uAlJNcVe_4g6M-MHUZpBThsHMtF-k_4OkM-mDS_-K7vsT_9t9AEThkcs</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>2395310715</pqid></control><display><type>article</type><title>On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates</title><source>Springer Nature - Complete Springer Journals</source><creator>Shupenev, A. E. ; Korshunov, I. S. ; Grigoryants, A. G.</creator><creatorcontrib>Shupenev, A. E. ; Korshunov, I. S. ; Grigoryants, A. G.</creatorcontrib><description>The peculiarities of obtaining
p
-Bi
0.5
Sb
1.5
Te
3
and
n
-Bi
2
Te
2.7
Se
0.3
thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric
p
- and
n
-type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K
2
) respectively due to the relatively high electrical resistances of the films.</description><identifier>ISSN: 1063-7826</identifier><identifier>ISSN: 1090-6479</identifier><identifier>EISSN: 1090-6479</identifier><identifier>DOI: 10.1134/S1063782620030173</identifier><language>eng</language><publisher>Moscow: Pleiades Publishing</publisher><subject>Bismuth ; Dielectric films ; Electric properties ; Electrical conductivity ; Fabrication ; Magnetic Materials ; Magnetism ; Physics ; Physics and Astronomy ; Pulsed laser deposition ; Pulsed lasers ; Seebeck effect ; Substrates ; Testing of Materials and Structures ; Thermoelectricity ; Thickness ; Thin films ; Treatment</subject><ispartof>Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.378-382, Article 378</ispartof><rights>Pleiades Publishing, Ltd. 2020</rights><rights>COPYRIGHT 2020 Springer</rights><rights>Pleiades Publishing, Ltd. 2020.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c403t-629d249d19f661e12bf87ecb76c962176fc7b0937a5528bb8e1ba80fedbba433</citedby><cites>FETCH-LOGICAL-c403t-629d249d19f661e12bf87ecb76c962176fc7b0937a5528bb8e1ba80fedbba433</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://link.springer.com/content/pdf/10.1134/S1063782620030173$$EPDF$$P50$$Gspringer$$H</linktopdf><linktohtml>$$Uhttps://link.springer.com/10.1134/S1063782620030173$$EHTML$$P50$$Gspringer$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,41467,42536,51298</link.rule.ids></links><search><creatorcontrib>Shupenev, A. E.</creatorcontrib><creatorcontrib>Korshunov, I. S.</creatorcontrib><creatorcontrib>Grigoryants, A. G.</creatorcontrib><title>On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates</title><title>Semiconductors (Woodbury, N.Y.)</title><addtitle>Semiconductors</addtitle><description>The peculiarities of obtaining
p
-Bi
0.5
Sb
1.5
Te
3
and
n
-Bi
2
Te
2.7
Se
0.3
thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric
p
- and
n
-type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K
2
) respectively due to the relatively high electrical resistances of the films.</description><subject>Bismuth</subject><subject>Dielectric films</subject><subject>Electric properties</subject><subject>Electrical conductivity</subject><subject>Fabrication</subject><subject>Magnetic Materials</subject><subject>Magnetism</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><subject>Pulsed laser deposition</subject><subject>Pulsed lasers</subject><subject>Seebeck effect</subject><subject>Substrates</subject><subject>Testing of Materials and Structures</subject><subject>Thermoelectricity</subject><subject>Thickness</subject><subject>Thin films</subject><subject>Treatment</subject><issn>1063-7826</issn><issn>1090-6479</issn><issn>1090-6479</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kFtLxDAQhYsoeP0BvhV87ppJ2qR99LYqLKxg8bUk7cSNtM2atA_7702pKHhhHjJMzjcnOVF0DmQBwNLLZyCciZxySggjINhedASkIAlPRbE_9Zwl0_1hdOz9GyEAeZYeRS_rPh42GD-NrccmWUmPLr7FrfVmMLaPrY6vje_GYZOU2LajMw3G5cb08dK0nY-D5Mm2O9NN8-dR-cHJAf1pdKBl2Hj2eZ5E5fKuvHlIVuv7x5urVVKnhA0Jp0VD06KBQnMOCFTpXGCtBK8LTkFwXQtFCiZkltFcqRxByZxobJSSKWMn0cW8duvs-4h-qN7s6PrgWFFWZAyIgCyoFrPqVbZYmV7b8Mg6VIOdqW2P2oT5FacUcsF5HgCYgdpZ7x3qautMJ92uAlJNcVe_4g6M-MHUZpBThsHMtF-k_4OkM-mDS_-K7vsT_9t9AEThkcs</recordid><startdate>20200301</startdate><enddate>20200301</enddate><creator>Shupenev, A. E.</creator><creator>Korshunov, I. S.</creator><creator>Grigoryants, A. G.</creator><general>Pleiades Publishing</general><general>Springer</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20200301</creationdate><title>On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates</title><author>Shupenev, A. E. ; Korshunov, I. S. ; Grigoryants, A. G.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c403t-629d249d19f661e12bf87ecb76c962176fc7b0937a5528bb8e1ba80fedbba433</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><topic>Bismuth</topic><topic>Dielectric films</topic><topic>Electric properties</topic><topic>Electrical conductivity</topic><topic>Fabrication</topic><topic>Magnetic Materials</topic><topic>Magnetism</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><topic>Pulsed laser deposition</topic><topic>Pulsed lasers</topic><topic>Seebeck effect</topic><topic>Substrates</topic><topic>Testing of Materials and Structures</topic><topic>Thermoelectricity</topic><topic>Thickness</topic><topic>Thin films</topic><topic>Treatment</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shupenev, A. E.</creatorcontrib><creatorcontrib>Korshunov, I. S.</creatorcontrib><creatorcontrib>Grigoryants, A. G.</creatorcontrib><collection>CrossRef</collection><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shupenev, A. E.</au><au>Korshunov, I. S.</au><au>Grigoryants, A. G.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates</atitle><jtitle>Semiconductors (Woodbury, N.Y.)</jtitle><stitle>Semiconductors</stitle><date>2020-03-01</date><risdate>2020</risdate><volume>54</volume><issue>3</issue><spage>378</spage><epage>382</epage><pages>378-382</pages><artnum>378</artnum><issn>1063-7826</issn><issn>1090-6479</issn><eissn>1090-6479</eissn><abstract>The peculiarities of obtaining
p
-Bi
0.5
Sb
1.5
Te
3
and
n
-Bi
2
Te
2.7
Se
0.3
thin thermoelectric films with a thickness of about 300 nm grown on a polyimide substrate by the pulsed-laser-deposition method are reported. The influence of the growth temperature, pressure and target-to-substrate distance on the film’s thermoelectric properties is investigated. Thermoelectric
p
- and
n
-type films exhibit a high Seebeck coefficient of 220 and –200 μV/K and low electrical power factors of 9.7 and 5.0 μW/(cm K
2
) respectively due to the relatively high electrical resistances of the films.</abstract><cop>Moscow</cop><pub>Pleiades Publishing</pub><doi>10.1134/S1063782620030173</doi><tpages>5</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1063-7826 |
| ispartof | Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.378-382, Article 378 |
| issn | 1063-7826 1090-6479 1090-6479 |
| language | eng |
| recordid | cdi_proquest_journals_2395310715 |
| source | Springer Nature - Complete Springer Journals |
| subjects | Bismuth Dielectric films Electric properties Electrical conductivity Fabrication Magnetic Materials Magnetism Physics Physics and Astronomy Pulsed laser deposition Pulsed lasers Seebeck effect Substrates Testing of Materials and Structures Thermoelectricity Thickness Thin films Treatment |
| title | On the Pulsed-Laser Deposition of Bismuth-Telluride Thin Films on Polyimide Substrates |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T01%3A56%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-gale_proqu&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=On%20the%20Pulsed-Laser%20Deposition%20of%20Bismuth-Telluride%20Thin%20Films%20on%20Polyimide%20Substrates&rft.jtitle=Semiconductors%20(Woodbury,%20N.Y.)&rft.au=Shupenev,%20A.%20E.&rft.date=2020-03-01&rft.volume=54&rft.issue=3&rft.spage=378&rft.epage=382&rft.pages=378-382&rft.artnum=378&rft.issn=1063-7826&rft.eissn=1090-6479&rft_id=info:doi/10.1134/S1063782620030173&rft_dat=%3Cgale_proqu%3EA622187668%3C/gale_proqu%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=2395310715&rft_id=info:pmid/&rft_galeid=A622187668&rfr_iscdi=true |