A 177-183 GHz High-Power GaN-based Frequency Doubler with over 200 mW Output Power
A GaN Schottky barrier diode (SBD) on SiC for frequency doubler applications was fabricated with a N-/N+ GaN stack of 200 nm / 1500 nm in thickness and 5×1017 cm-3 / 8×1018 cm-3 in doping densities, respectively. A cut-off frequency of 459 GHz at zero bias and reverse breakdown voltage of 15.4 V wer...
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| Veröffentlicht in: | IEEE electron device letters 2020-05, Vol.41 (5), p.1-1 |
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| container_title | IEEE electron device letters |
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| creator | Liang, Shixiong Song, Xubo Zhang, Lisen Lv, Yuanjie Wang, Yuangang Wei, Bihua Guo, Yanmin Gu, Guodong Wang, Bo Cai, Shujun Feng, Zhihong |
| description | A GaN Schottky barrier diode (SBD) on SiC for frequency doubler applications was fabricated with a N-/N+ GaN stack of 200 nm / 1500 nm in thickness and 5×1017 cm-3 / 8×1018 cm-3 in doping densities, respectively. A cut-off frequency of 459 GHz at zero bias and reverse breakdown voltage of 15.4 V were obtained. A quartz glass circuit with flip-chip-mounted GaN SBDs was inserted between split-waveguide blocks to form a balanced frequency doubler. When driven with 2 W input power in pulsed mode, measured output power was 200-244 mW from 177-183 GHz with efficiency 9.5-11.8%. |
| doi_str_mv | 10.1109/LED.2020.2981939 |
| format | Article |
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A cut-off frequency of 459 GHz at zero bias and reverse breakdown voltage of 15.4 V were obtained. A quartz glass circuit with flip-chip-mounted GaN SBDs was inserted between split-waveguide blocks to form a balanced frequency doubler. When driven with 2 W input power in pulsed mode, measured output power was 200-244 mW from 177-183 GHz with efficiency 9.5-11.8%.</description><identifier>ISSN: 0741-3106</identifier><identifier>EISSN: 1558-0563</identifier><identifier>DOI: 10.1109/LED.2020.2981939</identifier><identifier>CODEN: EDLEDZ</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Circuits ; Frequency doublers ; Frequency measurement ; Gallium nitride ; Gallium nitrides ; GaN Schottky barrier diodes ; Loss measurement ; mm-wave ; Power generation ; Power measurement ; Schottky diodes ; Silica glass ; Temperature measurement ; THz ; THz frequency doubler ; Voltage measurement ; wide bandgap semiconductor</subject><ispartof>IEEE electron device letters, 2020-05, Vol.41 (5), p.1-1</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2020</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c291t-5cc8dd6db090398817afa757c21d9713f949345a18c0393de42913dcf29fefad3</citedby><cites>FETCH-LOGICAL-c291t-5cc8dd6db090398817afa757c21d9713f949345a18c0393de42913dcf29fefad3</cites><orcidid>0000-0003-4336-3373 ; 0000-0001-6939-4237 ; 0000-0002-9207-8344 ; 0000-0002-4240-7875</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/9042248$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,777,781,793,27906,27907,54740</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/9042248$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liang, Shixiong</creatorcontrib><creatorcontrib>Song, Xubo</creatorcontrib><creatorcontrib>Zhang, Lisen</creatorcontrib><creatorcontrib>Lv, Yuanjie</creatorcontrib><creatorcontrib>Wang, Yuangang</creatorcontrib><creatorcontrib>Wei, Bihua</creatorcontrib><creatorcontrib>Guo, Yanmin</creatorcontrib><creatorcontrib>Gu, Guodong</creatorcontrib><creatorcontrib>Wang, Bo</creatorcontrib><creatorcontrib>Cai, Shujun</creatorcontrib><creatorcontrib>Feng, Zhihong</creatorcontrib><title>A 177-183 GHz High-Power GaN-based Frequency Doubler with over 200 mW Output Power</title><title>IEEE electron device letters</title><addtitle>LED</addtitle><description>A GaN Schottky barrier diode (SBD) on SiC for frequency doubler applications was fabricated with a N-/N+ GaN stack of 200 nm / 1500 nm in thickness and 5×1017 cm-3 / 8×1018 cm-3 in doping densities, respectively. A cut-off frequency of 459 GHz at zero bias and reverse breakdown voltage of 15.4 V were obtained. A quartz glass circuit with flip-chip-mounted GaN SBDs was inserted between split-waveguide blocks to form a balanced frequency doubler. When driven with 2 W input power in pulsed mode, measured output power was 200-244 mW from 177-183 GHz with efficiency 9.5-11.8%.</description><subject>Circuits</subject><subject>Frequency doublers</subject><subject>Frequency measurement</subject><subject>Gallium nitride</subject><subject>Gallium nitrides</subject><subject>GaN Schottky barrier diodes</subject><subject>Loss measurement</subject><subject>mm-wave</subject><subject>Power generation</subject><subject>Power measurement</subject><subject>Schottky diodes</subject><subject>Silica glass</subject><subject>Temperature measurement</subject><subject>THz</subject><subject>THz frequency doubler</subject><subject>Voltage measurement</subject><subject>wide bandgap semiconductor</subject><issn>0741-3106</issn><issn>1558-0563</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNo9kEFPAjEQRhujiYjeTbw08VycabtseyQgYELEGI3HprRdgQCL3V0J_nqLEE8zyXxvZvIIuUXoIIJ-mDwOOhw4dLhWqIU-Iy3MMsUg64pz0oJcIhMI3UtyVVVLAJQyly3y2qOY5wyVoKPxDx0vPufspdyFSEf2mc1sFTwdxvDVhI3b00HZzFZptlvUc1p-p44D0PUHnTb1tqnpH3lNLgq7qsLNqbbJ-_DxrT9mk-noqd-bMMc11ixzTnnf9TPQILRSmNvC5lnuOHqdoyi01EJmFpVLc-GDTJjwruC6CIX1ok3uj3u3sUz_VbVZlk3cpJOGC51hJhWIlIJjysWyqmIozDYu1jbuDYI5mDPJnDmYMydzCbk7IosQwn9cg-RcKvELLpVl5w</recordid><startdate>20200501</startdate><enddate>20200501</enddate><creator>Liang, Shixiong</creator><creator>Song, Xubo</creator><creator>Zhang, Lisen</creator><creator>Lv, Yuanjie</creator><creator>Wang, Yuangang</creator><creator>Wei, Bihua</creator><creator>Guo, Yanmin</creator><creator>Gu, Guodong</creator><creator>Wang, Bo</creator><creator>Cai, Shujun</creator><creator>Feng, Zhihong</creator><general>IEEE</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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A cut-off frequency of 459 GHz at zero bias and reverse breakdown voltage of 15.4 V were obtained. A quartz glass circuit with flip-chip-mounted GaN SBDs was inserted between split-waveguide blocks to form a balanced frequency doubler. When driven with 2 W input power in pulsed mode, measured output power was 200-244 mW from 177-183 GHz with efficiency 9.5-11.8%.</abstract><cop>New York</cop><pub>IEEE</pub><doi>10.1109/LED.2020.2981939</doi><tpages>1</tpages><orcidid>https://orcid.org/0000-0003-4336-3373</orcidid><orcidid>https://orcid.org/0000-0001-6939-4237</orcidid><orcidid>https://orcid.org/0000-0002-9207-8344</orcidid><orcidid>https://orcid.org/0000-0002-4240-7875</orcidid></addata></record> |
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| subjects | Circuits Frequency doublers Frequency measurement Gallium nitride Gallium nitrides GaN Schottky barrier diodes Loss measurement mm-wave Power generation Power measurement Schottky diodes Silica glass Temperature measurement THz THz frequency doubler Voltage measurement wide bandgap semiconductor |
| title | A 177-183 GHz High-Power GaN-based Frequency Doubler with over 200 mW Output Power |
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