Modeling and analysis for thermal management in gallium oxide field-effect transistors

Increased attention has been paid to the thermal management of β-Ga2O3 devices as a result of the large thermal resistance that can present itself in part due to its low intrinsic thermal conductivity. A number of die-level thermal management approaches exist that could be viable for thermal managem...

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Veröffentlicht in:Journal of applied physics 2020-04, Vol.127 (15)
Hauptverfasser: Yuan, Chao, Zhang, Yuewei, Montgomery, Robert, Kim, Samuel, Shi, Jingjing, Mauze, Akhil, Itoh, Takeki, Speck, James S., Graham, Samuel
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Sprache:eng
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