Improved Uniform Current Injection into Core‐Shell‐Type GaInN Nanowire Light‐Emitting Diodes by Optimizing Growth Condition and Indium‐Tin‐Oxide Deposition

The aim of this research is to realize high‐efficiency light‐emitting diodes (LEDs) with a 3D core‐shell GaN nanowire. This article describes the growth of 3D core‐shell GaN nanowires, the formation of indium tin oxide (ITO) around the p‐GaN outer shell of the nanowires, and the characteristics of t...

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Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2020-04, Vol.217 (7), p.n/a
Hauptverfasser:	Sone, Naoki, Suzuki, Atsushi, Murakami, Hideki, Goto, Nanami, Terazawa, Mizuki, Lu, Weifang, Han, Dong-Pyo, Iida, Kazuyoshi, Ohya, Masaki, Iwaya, Motoaki, Takeuchi, Tetsuya, Kamiyama, Satoshi, Akasaki, Isamu
Format:	Artikel
Sprache:	eng
Schlagworte:	Current injection Diameters Electrodes Film thickness Gallium nitrides Indium tin oxides indium-tin-oxide Light emitting diodes Microscopy Nanowires Scanning electron microscopy Scanning transmission electron microscopy shadowing effects sputter working distances uniform current injection
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