Normally‐Off Operation of Lateral Field‐Effect Transistors Fabricated from Ultrapure GaN/AlGaN Heterostructures

The presence of a 2D electron gas (2DEG) in GaN/AlxGa1–xN heterostructures with low aluminum mole fraction is found to depend on the residual background impurity concentration in the GaN/AlGaN layer stack. At a residual donor level of 2 × 1016 cm−3, a 2DEG is absent at 300 K in dark environment. Suc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Veröffentlicht in:	Physica status solidi. A, Applications and materials science Applications and materials science, 2020-04, Vol.217 (7), p.n/a
Hauptverfasser:	Schmult, Stefan, Wirth, Steffen, Solovyev, Victor V., Hentschel, Rico, Wachowiak, Andre, Scheinert, Tobias, Großer, Andreas, Kukushkin, Igor V., Mikolajick, Thomas
Format:	Artikel
Sprache:	eng
Schlagworte:	2D electron gas Aluminum gallium nitrides Electron gas Gallium nitrides Heterostructures molecular beam epitaxy growth normally-off field-effect transistor Semiconductor devices Transistors ultra-pure GaN/AlGaN heterostructrues Ultraviolet radiation
Online-Zugang:	Volltext
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!