Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells

An AlGaN-based deep ultraviolet laser diode with convex quantum wells structure is proposed. The advantage of using a convex quantum wells structure is that the radiation recombination is significantly improved. The improvement is attributed to the increase of the effective barrier height for electr...

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Veröffentlicht in:	Optoelectronics letters 2020-03, Vol.16 (2), p.87-91
Hauptverfasser:	Xing, Zhong-qiu, Zhou, Yong-jie, Chen, Xue, Niass, Mussaab I., Wang, Yi-fu, Wang, Fang, Liu, Yu-huai
Format:	Artikel
Sprache:	eng
Schlagworte:	Lasers Optical Devices Optics Photonics Physics Physics and Astronomy Quantum wells Radiative recombination Semiconductor lasers Ultraviolet lasers
Online-Zugang:	Volltext
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