A comprehensive investigation on Ag-doped ZnO based photodiodes with nanofibers
The morphological, optical and electrical properties of undoped Zinc Oxide (ZnO) and 0.5% and 2% Ag-doped ZnO based Photodiodes were investigated. ZnO samples, which were deposited on p-type Si semiconductor substrates using spin a coating method, were produced by sol–gel method. The morphological p...
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| Veröffentlicht in: | Journal of materials science. Materials in electronics 2020-04, Vol.31 (8), p.6059-6071 |
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| creator | Asar, Tarık Yavuz, Tuğrul Coşkun, Burhan |
| description | The morphological, optical and electrical properties of undoped Zinc Oxide (ZnO) and 0.5% and 2% Ag-doped ZnO based Photodiodes were investigated. ZnO samples, which were deposited on p-type Si semiconductor substrates using spin a coating method, were produced by sol–gel method. The morphological properties of the ZnO films were investigated by atomic force microscopy. The results revealed that thin films are in nanofiber like structure that nanofiber spread homogeneously on the substrate. Additionally, the permittivity, absorbance, reflectivity and bandgap energy values were calculated by using the UV measurement results. The optic bandgaps of the films were also calculated by the optical absorption method. Each sample shows permittivity properties in the visible region; samples show absorption properties in the region where the applied wavelength is smaller than 400 nm. Reflecting boundaries were shift to higher boundaries with increased dopant effect. The transmittance of samples was found low in the UV region, but it shows higher characteristics which are between 78 and 88% in the visible region. To investigate the electrical properties of produced thin films, Current–Voltage, Capacitance–Voltage, Conductance–Voltage characteristics and Current–Time measurements were obtained in different illumination intensities. It was seen that the samples show photoconductive performance. |
| doi_str_mv | 10.1007/s10854-020-03159-3 |
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ZnO samples, which were deposited on p-type Si semiconductor substrates using spin a coating method, were produced by sol–gel method. The morphological properties of the ZnO films were investigated by atomic force microscopy. The results revealed that thin films are in nanofiber like structure that nanofiber spread homogeneously on the substrate. Additionally, the permittivity, absorbance, reflectivity and bandgap energy values were calculated by using the UV measurement results. The optic bandgaps of the films were also calculated by the optical absorption method. Each sample shows permittivity properties in the visible region; samples show absorption properties in the region where the applied wavelength is smaller than 400 nm. Reflecting boundaries were shift to higher boundaries with increased dopant effect. The transmittance of samples was found low in the UV region, but it shows higher characteristics which are between 78 and 88% in the visible region. To investigate the electrical properties of produced thin films, Current–Voltage, Capacitance–Voltage, Conductance–Voltage characteristics and Current–Time measurements were obtained in different illumination intensities. 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Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>The morphological, optical and electrical properties of undoped Zinc Oxide (ZnO) and 0.5% and 2% Ag-doped ZnO based Photodiodes were investigated. ZnO samples, which were deposited on p-type Si semiconductor substrates using spin a coating method, were produced by sol–gel method. The morphological properties of the ZnO films were investigated by atomic force microscopy. The results revealed that thin films are in nanofiber like structure that nanofiber spread homogeneously on the substrate. Additionally, the permittivity, absorbance, reflectivity and bandgap energy values were calculated by using the UV measurement results. The optic bandgaps of the films were also calculated by the optical absorption method. Each sample shows permittivity properties in the visible region; samples show absorption properties in the region where the applied wavelength is smaller than 400 nm. Reflecting boundaries were shift to higher boundaries with increased dopant effect. The transmittance of samples was found low in the UV region, but it shows higher characteristics which are between 78 and 88% in the visible region. To investigate the electrical properties of produced thin films, Current–Voltage, Capacitance–Voltage, Conductance–Voltage characteristics and Current–Time measurements were obtained in different illumination intensities. It was seen that the samples show photoconductive performance.</description><subject>Absorption</subject><subject>Atomic force microscopy</subject><subject>Boundaries</subject><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Electric potential</subject><subject>Electrical properties</subject><subject>Energy gap</subject><subject>Investigations</subject><subject>Materials Science</subject><subject>Mathematical analysis</subject><subject>Morphology</subject><subject>Nanofibers</subject><subject>Optical and Electronic Materials</subject><subject>Optical properties</subject><subject>P-type semiconductors</subject><subject>Permittivity</subject><subject>Photodiodes</subject><subject>Resistance</subject><subject>Silicon substrates</subject><subject>Silver</subject><subject>Sol-gel processes</subject><subject>Thin films</subject><subject>Voltage</subject><subject>Zinc oxide</subject><subject>Zinc oxides</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><sourceid>BENPR</sourceid><recordid>eNp9kE9LAzEQxYMoWKtfwNOC52iSSbrZYyn-g0IvCuIlZHcnbYpN1mRb8du7uoI3YWDm8N6bx4-QS86uOWPlTeZMK0mZYJQBVxWFIzLhqgQqtXg5JhNWqZJKJcQpOct5yxibSdATspoXTdx1CTcYsj9g4cMBc-_XtvcxFMPM17SNHbbFa1gVtc3D1W1iH1sfW8zFh-83RbAhOl9jyufkxNm3jBe_e0qe726fFg90ubp_XMyXtAFe9RSwkg1z3LpazqDSvC5x1lgHM7SiLqWSUjvGoG6Qg1Nl24AWClrOrUauBUzJ1Zjbpfi-HxqbbdynMLw0ArSGqpIcBpUYVU2KOSd0pkt-Z9On4cx8gzMjODOAMz_gzLcJRlMexGGN6S_6H9cX3CJwwg</recordid><startdate>20200401</startdate><enddate>20200401</enddate><creator>Asar, Tarık</creator><creator>Yavuz, Tuğrul</creator><creator>Coşkun, Burhan</creator><general>Springer US</general><general>Springer Nature B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>8FE</scope><scope>8FG</scope><scope>ABJCF</scope><scope>AFKRA</scope><scope>ARAPS</scope><scope>BENPR</scope><scope>BGLVJ</scope><scope>CCPQU</scope><scope>D1I</scope><scope>DWQXO</scope><scope>F28</scope><scope>FR3</scope><scope>HCIFZ</scope><scope>JG9</scope><scope>KB.</scope><scope>L7M</scope><scope>P5Z</scope><scope>P62</scope><scope>PDBOC</scope><scope>PQEST</scope><scope>PQQKQ</scope><scope>PQUKI</scope><scope>PRINS</scope><scope>S0W</scope><orcidid>https://orcid.org/0000-0002-8242-9921</orcidid></search><sort><creationdate>20200401</creationdate><title>A comprehensive investigation on Ag-doped ZnO based photodiodes with nanofibers</title><author>Asar, Tarık ; 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Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Asar, Tarık</au><au>Yavuz, Tuğrul</au><au>Coşkun, Burhan</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A comprehensive investigation on Ag-doped ZnO based photodiodes with nanofibers</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2020-04-01</date><risdate>2020</risdate><volume>31</volume><issue>8</issue><spage>6059</spage><epage>6071</epage><pages>6059-6071</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>The morphological, optical and electrical properties of undoped Zinc Oxide (ZnO) and 0.5% and 2% Ag-doped ZnO based Photodiodes were investigated. ZnO samples, which were deposited on p-type Si semiconductor substrates using spin a coating method, were produced by sol–gel method. The morphological properties of the ZnO films were investigated by atomic force microscopy. The results revealed that thin films are in nanofiber like structure that nanofiber spread homogeneously on the substrate. Additionally, the permittivity, absorbance, reflectivity and bandgap energy values were calculated by using the UV measurement results. The optic bandgaps of the films were also calculated by the optical absorption method. Each sample shows permittivity properties in the visible region; samples show absorption properties in the region where the applied wavelength is smaller than 400 nm. Reflecting boundaries were shift to higher boundaries with increased dopant effect. The transmittance of samples was found low in the UV region, but it shows higher characteristics which are between 78 and 88% in the visible region. To investigate the electrical properties of produced thin films, Current–Voltage, Capacitance–Voltage, Conductance–Voltage characteristics and Current–Time measurements were obtained in different illumination intensities. It was seen that the samples show photoconductive performance.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-020-03159-3</doi><tpages>13</tpages><orcidid>https://orcid.org/0000-0002-8242-9921</orcidid></addata></record> |
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| subjects | Absorption Atomic force microscopy Boundaries Characterization and Evaluation of Materials Chemistry and Materials Science Electric potential Electrical properties Energy gap Investigations Materials Science Mathematical analysis Morphology Nanofibers Optical and Electronic Materials Optical properties P-type semiconductors Permittivity Photodiodes Resistance Silicon substrates Silver Sol-gel processes Thin films Voltage Zinc oxide Zinc oxides |
| title | A comprehensive investigation on Ag-doped ZnO based photodiodes with nanofibers |
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