Giant Strain Control of Antiferromagnetic Moment in Metallic FeMn by Tuning Exchange Spring Structure

Manipulation of the antiferromagnetic moment in antiferromagnets (AFMs) is a crucial issue for developing AFM‐based spintronic devices. Lattice strain is an effective strategy to modulate the antiferromagnetic moment and is traditionally based on a direct crystalline tailoring of AFMs. A novel method for strain tuning the antiferromagnetic moment by controlling the exchange spring in the AFM, which is applicable to other conventional AFM materials, is reported. Specifically, a TiNi(Nb) shape memory alloy (SMA) is used as the substrate of Ta/NiFe/FeMn multilayers. By thermally driven inverse martensitic phase transformation in the SMA, a significant strain of 1.3% is transferred into the film, which toggles a noticeable magnetic moment rotation of NiFe by nearly 90° in the film plane, resulting in a consequent twirling of the Néel vector of FeMn due to interfacial exchange interaction. In turn, the antiferromagnetic moment of FeMn is tailorable by tuning the exchange spring. Simultaneously, the exchange bias field is tuned significantly with a maximal variation of 350% due to the twist of the antiferromagnetic moment, which facilitates strain‐assisted magnetization reversal for developing a logic memory device. These findings provide an alternative strategy to advance the development of an AFM‐based memorizer by temperature‐driven strain engineering. Effective manipulation of the antiferromagnetic moment of FeMn is demonstrated by controlling the exchange spring with a giant strain exerted from a shape memory alloy substrate, which may be universally applicable to conventional antiferromagnets and provide a novel way to construct antiferromagnet‐based spintronic devices. Simultaneously, exchange bias is tuned significantly, which facilitates the development of strain‐assisted logic devices.